Silicon Carbide Power MOSFET 1200 Volt 40 Amp Hermetic MYXMN1200-40CAB Product Overview Features y r a in Benefits • High speed switching with low capacitance • High voltage 1200V isolation in a small package outline • High blocking voltage with low RDS(on) • Reduction of heat sink requirements • High current 40A • High temperature 210 C O • RoHS compliant m i l e r P • Electrically Isolated flange / case Applications • Silicon Carbide (SiC) device, gives a superior high temperature performance • No reverse recovery time • Screening options available • Harsh environment inverter • Induction heater Pin1 Pin2 Pin3 Figure 2: Circuit Diagram Absolute Maximum Ratings* VDS Case • Harsh environment motor drive ºº Commercial high temperature ºº In accordance with MIL-PRF-19500 ºº Other options available on request • Other package options available Symbols Figure 1: TO-258 Parameters Drain Source Voltage Values Units 1200 Volts ID Continuous Drain Current 40 Amps IAR Repetitive Avalanche Current (ID = 20A, VDD = 50 V, L = 3 mH ) 20 Amps VGS Gate Source Voltage -5 / +25 Volts PTOT Total power Dissipation 154 Watts TJ Junction Temperature Range -55 to +210 o Tstg Storage Temperature Range -55 to +210 o C C Thermal Properties Symbols RθJC March 2014 Rev 1.0 Parameters Values Thermal Resistance, Junction To Case 1.2 Units o C / Watt 1 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide Power MOSFET 1200 Volt 40 Amp Hermetic MYXMN1200-40CAB Electrical Characteristics Symbols V(BR)DSS y r a in Parameters Test Conditions Drain Source Breakdown VGS=0V, ID=100µA, TJ =25oC Min IDSS Zero Gate Voltage Drain IGSS Gate-Source Leakage Current RDS(On) VDS=VGS, ID=1mA, TJ=25oC m i l e r P Gate Threshold Drain Source On State Resistance Max 1200 VDS=VGS, ID=1mA, TJ=-55oC VGS(th) Typ Units Volts 2.6 0.1 2.07 3.0 Volts VDS=VGS, ID=1mA, TJ=125oC 1.55 VDS=VGS, ID=1mA, TJ=210oC 1.3 VDS=1200V, VGS=0V, TJ=25oC 0.8 100 VDS=1200V, VGS=0V, TJ=210oC 10 450 0.01 0.25 µA VGS=20V, VDS=0V, TJ=25oC VGS=20V, ID=40A, TJ=-55oC 40 60 80 VGS=20V, ID=40A, TJ=25oC 41 61 81 VGS=20V, ID=40A, TJ=125oC 47 67 87 VGS=20V, ID=40A, TJ=210oC 100 130 160 Min Typ Max µA mΩ Built in Body Diode Electrical Characteristics Symbols VSD Parameters Diode Forward Voltage Test Conditions VGS=-5V, IF=10A, TJ =25oC 3.5 VGS=-2V, IF=10A, TJ =25oC 3.1 Units Volts Gate Charge Characteristics Symbols Parameters Qgs Gate to Source Charge Qgd Gate to Drain Charge Qg Gate Charge Total March 2014 Rev 1.0 Test Conditions Min Typ Max Units 47.6 VDD =800V, VGS = 0/20V, ID = 20A TJ =25oC 86.2 nC 181.6 2 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide Power MOSFET 1200 Volt 40 Amp Hermetic MYXMN1200-40CAB y r a in CA = TO-258 Package Type ####### = Batch code yyww = Date code yy = year ww = week m i l e r P (Font and text colour is not representative of actual parts produced) Figure 3: Package Dimensions & Part Marking March 2014 Rev 1.0 3 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide Power MOSFET 1200 Volt 40 Amp Hermetic MYXMN1200-40CAB y r a in * Absolute Maximum Ratings Disclaimer Stresses greater than the values listed under the Absolute Maximum Ratings table may cause permanent damage to the device. These values are stress ratings, functional operation of the device at these or conditions greater than those listed is not implied herein. Exposure to absolute maximum conditions for any duration may affect device reliability and operational life. Document Title m i l e r P Silicon Carbide Power Mosfet 1200 Volt 40 Amp Hermetic MYXMN1200-40CAB Revision History Revision # History 1.0 Initial release March 2014 Rev 1.0 Release Date March 2014 Status Preliminary 4 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com