Silicon Carbide Power MOSFET 1200 Volt 20 Amp Hermetic MYXMN1200-20CAB Product Overview Features y r a in Benefits • High speed switching with low capacitance • High voltage 1200V isolation in a small package outline • High blocking voltage with low RDS(on) • Reduction of heat sink requirements • High current 20A • High temperature 210 C O • RoHS compliant • HMP solder tinned leads available • Electrically isolated flange / case m i l e r P Applications • Silicon Carbide (SiC) device, gives a superior high temperature performance • No reverse recovery time • Screening options available • Harsh environment motor drive • Induction heater Pin1 Pin2 Pin3 Figure 2: Circuit Diagram Absolute Maximum Ratings* VDS Case • Harsh environment inverter ºº Commercial high temperature ºº In accordance with MIL-PRF-19500 ºº Other options available on request • Other package options available Symbols Figure 1: TO-258 Parameters Drain Source Voltage Values Units 1200 Volts ID Continuous Drain Current 20 Amps IAR Repetitive Avalanche Current (ID = 20A, VDD = 50 V, L = 3 mH ) 18 Amps VGS Gate Source Voltage -5 / +25 Volts PTOT Total Power Dissipation 77 Watts TJ Junction Temperature Range -55 to +210 o Tstg Storage Temperature Range -55 to +210 o C C Thermal Properties Symbols RθJC March 2014 Rev 1.0 Parameters Values Thermal Resistance, Junction To Case 2.4 Units o C / Watt 1 1 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide Power MOSFET 1200 Volt 20 Amp Hermetic MYXMN1200-20CAB y r a in Electrical Characteristics Symbols V(BR)DSS Parameters Test Conditions Drain Source Breakdown VGS=0V, ID=100µA, TJ=25oC m i l e r P Min Gate Threshold IDSS Zero Gate Voltage Drain IGSS Gate-Source Leakage Current RDS(On) Drain Source On State Resistance VDS=VGS, ID=1mA, TJ=25oC Max 1200 VDS=VGS, ID=1mA, TJ=-55oC VGS(th) Typ Units Volts 3.8 0.1 3.1 4.5 Volts VDS=VGS, ID=1mA, TJ=125oC 2.5 VDS=VGS, ID=1mA, TJ=210oC 2.2 VDS=1200V, VGS=0V, TJ=25oC 1 100 VDS=1200V, VGS=0V, TJ=210oC 10 450 0.06 0.25 µA VGS=20V, VDS=0V, TJ=25oC VGS=20V, ID=20A, TJ=-55oC 70 100 125 VGS=20V, ID=20A, TJ=25oC 70 100 125 VGS=20V, ID=20A, TJ=125oC 90 110 150 VGS=20V, ID=20A, TJ=210oC 120 155 210 Min Typ Max µA mΩ Built in Body Diode Electrical Characteristics Symbols VSD Parameters Diode Forward Voltage Test Conditions VGS=-5V, IF=10A, TJ =25oC 3.5 VGS=-2V, IF=10A, TJ =25oC 3.1 Units Volts Gate Charge Characteristics Symbols Parameters Qgs Gate to Source Charge Qgd Gate to Drain Charge Qg Gate Charge Total March 2014 Rev 1.0 Test Conditions Min Typ Max Units 23.8 VDD =800V, VGS = 0/20V, ID = 20A TJ =25oC 43.1 nC 90.8 2 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide Power MOSFET 1200 Volt 20 Amp Hermetic MYXMN1200-20CAB y r a in CA = TO-258 Package Type ####### = Batch code yyww = Date code yy = year ww = week m i l e r P (Font and text colour is not representative of actual parts produced) Figure 3: Package Dimensions & Part Marking March 2014 Rev 1.0 3 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com Silicon Carbide Power MOSFET 1200 Volt 20 Amp Hermetic MYXMN1200-20CAB y r a in * Absolute Maximum Ratings Disclaimer Stresses greater than the values listed under the Absolute Maximum Ratings table may cause permanent damage to the device. These values are stress ratings, functional operation of the device at these or conditions greater than those listed is not implied herein. Exposure to absolute maximum conditions for any duration may affect device reliability and operational life. Document Title m i l e r P Silicon Carbide Power Mosfet 1200 Volt 20 Amp Hermetic MYXMN1200-20CAB Revision History Revision # History 1.0 Preliminary March 2014 Rev 1.0 Release Date Status March 2014 Preliminary 4 Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • [email protected] • www.micross.com