2SD649 SEMICONDUCTOR RoHS RoHS Nell High Power Products High Voltage NPN Power Transistors (3A, 1500V) FEATURES 13.10 Max. 26.00 Max. High V CES breakdown voltage. 8.60 10.90 1.60 High collector peak current 16.85 The 2SD649 is a silicon epitaxial-base mesa NPN transistor mounted in JEDEC TO-3 metal case. 1 Φ20.00 Max. 38.50 DESCRIPTION 30.00 Φ1.00 High reliability 2 APPLICATIONS 2- Φ 4.0 Thru. Designed for line-operated horizontal deflection output All dimensions in millimeters INTERNAL SCHEMATIC DIAGRAM TAB C (TAB) (1) 1 B 2 TO-3 (2) E ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER VALUE VCBO Collector to base voltage 1500 V CES Collector to emitter voltage (V BE = 0) 1500 V EBO Emitter to base voltage (I C = 0) 5 IC Collector current 3 I CP Collector peak current 5 PC Total power dissipation (T C ≤ 90°C) Tj Junction temperature 130 T stg Storage temperature -65 to 130 UNIT V A TL www.nellsemi.com Maximum lead temperature for soldering purposes : 1/8" from case for 5 seconds Page 1 of 3 35 275 W ºC 2SD649 SEMICONDUCTOR RoHS RoHS Nell High Power Products ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL CONDITIONS PARAMETER MIN MAX OFF CHARACTERISTICS V CB = 750V, I E = 0 100 V CB = 1500V, I E = 0 1.0 Emitter cutoff current V EB = 5V, l C = 0 1.0 V (BR)EBO Emitter to base breakdown voltage l C = 0 , I E = 10mA V CE(sat) Collector to emitter saturation voltage l C = 3A , l B = 1A 7.0 V BE(sat) Base to emitter saturation voltage l C = 3A, l B = 1A 1.5 DC current gain l C = 3A, V CE = 10V ICBO µA Collector cutoff current mA I EBO h FE 5 4 12 TYP. MAX. V INDUCTIVE SWITCHING TIMES SYMBOL PARAMETER CONDITIONS ts Storage time l C = 3A, L B = 20 µH, l Bend = 1A T C = 25°C tf Fall time l C = 3A, L B = 20 µH, l Bend = 1A T C = 25°C MIN. Fig.1 Power dissipation vs. ambient tempearatrature 13 µs 1.0 Fig.2 Base-Emitter saturation voltage 100 40 lC / lB = 3 T C = 25°C 30 Collector current, I C (A) Power dissipation, P C (W) (1) 30 (1) T c =T a (2) With a 100x100x2mm Al heat sink 20 (2) 10 10 3 1 0.3 0.1 0.03 0 0 20 40 60 80 100 120 140 0.01 0.01 160 0.1 0.3 1 3 10 Base - Emitter saturation voltage, V BE(sat) (V) Ambient temperature, T a (°C) www.nellsemi.com 0.03 Page 2 of 3 2SD649 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.3 Collector-Emitter saturation voltage Fig.4 DC current gain 1000 100 300 DC current gain, h FE 30 Collector current, I C (A) V CE = 10V lC / lB = 3 T C = 25°C 10 3 1 0.3 0.1 100 T C = 25 °C T C = -2 5°C 10 3 1 0.3 0.03 0.01 0.01 T C = 10 0°C 30 0.03 0.1 0.3 3 1 0.1 0.01 10 0.03 Collector - Emitter saturation voltage, V CE(sat) (V) 0.1 0.03 Collector current, I C (A) Fig.5 Safe operation area 16 f=15.75kHz SOA for a single plusc caused by EHT flashover load during horizontal operattion Collector current, I C (A) 14 12 10 8 6 4 2 0 0 400 800 1200 1600 2000 2400 Collector - Emitter voltage, V CE (V) Thermal resistance, R th(t) (°C/W) Fig.6 Thermal resistance (from junction to tab) 10 2 (1) Without heat sink (2) With a 100x100x2mm Al heak sink 10 (1) (2) 1 10 -1 10 -2 10 -4 10 -3 10 -2 10 -1 1 Time, t (s) www.nellsemi.com 1 Page 3 of 3 10 10 -2 10 -3 10 -4 3 10