2SD649 - 勿動

2SD649
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
High Voltage NPN Power Transistors
(3A, 1500V)
FEATURES
13.10 Max.
26.00 Max.
High V CES breakdown voltage.
8.60
10.90
1.60
High collector peak current
16.85
The 2SD649 is a silicon epitaxial-base mesa
NPN transistor mounted in JEDEC TO-3 metal
case.
1
Φ20.00 Max.
38.50
DESCRIPTION
30.00
Φ1.00
High reliability
2
APPLICATIONS
2- Φ 4.0 Thru.
Designed for line-operated horizontal deflection
output
All dimensions in millimeters
INTERNAL SCHEMATIC DIAGRAM
TAB
C (TAB)
(1)
1
B
2
TO-3
(2)
E
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
VALUE
VCBO
Collector to base voltage
1500
V CES
Collector to emitter voltage (V BE = 0)
1500
V EBO
Emitter to base voltage (I C = 0)
5
IC
Collector current
3
I CP
Collector peak current
5
PC
Total power dissipation (T C ≤ 90°C)
Tj
Junction temperature
130
T stg
Storage temperature
-65 to 130
UNIT
V
A
TL
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Maximum lead temperature for soldering purposes : 1/8"
from case for 5 seconds
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35
275
W
ºC
2SD649
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
CONDITIONS
PARAMETER
MIN
MAX
OFF CHARACTERISTICS
V CB = 750V, I E = 0
100
V CB = 1500V, I E = 0
1.0
Emitter cutoff current
V EB = 5V, l C = 0
1.0
V (BR)EBO
Emitter to base breakdown voltage
l C = 0 , I E = 10mA
V CE(sat)
Collector to emitter saturation voltage
l C = 3A , l B = 1A
7.0
V BE(sat)
Base to emitter saturation voltage
l C = 3A, l B = 1A
1.5
DC current gain
l C = 3A, V CE = 10V
ICBO
µA
Collector cutoff current
mA
I EBO
h FE
5
4
12
TYP.
MAX.
V
INDUCTIVE SWITCHING TIMES
SYMBOL
PARAMETER
CONDITIONS
ts
Storage time
l C = 3A, L B = 20 µH, l Bend = 1A
T C = 25°C
tf
Fall time
l C = 3A, L B = 20 µH, l Bend = 1A
T C = 25°C
MIN.
Fig.1 Power dissipation vs. ambient
tempearatrature
13
µs
1.0
Fig.2 Base-Emitter saturation voltage
100
40
lC / lB = 3
T C = 25°C
30
Collector current, I C (A)
Power dissipation, P C (W)
(1)
30
(1) T c =T a
(2) With a 100x100x2mm
Al heat sink
20
(2)
10
10
3
1
0.3
0.1
0.03
0
0
20
40
60
80
100
120
140
0.01
0.01
160
0.1
0.3
1
3
10
Base - Emitter saturation voltage, V BE(sat) (V)
Ambient temperature, T a (°C)
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0.03
Page 2 of 3
2SD649
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.3 Collector-Emitter saturation voltage
Fig.4 DC current gain
1000
100
300
DC current gain, h FE
30
Collector current, I C (A)
V CE = 10V
lC / lB = 3
T C = 25°C
10
3
1
0.3
0.1
100
T C = 25 °C
T C = -2 5°C
10
3
1
0.3
0.03
0.01
0.01
T C = 10 0°C
30
0.03
0.1
0.3
3
1
0.1
0.01
10
0.03
Collector - Emitter saturation voltage, V CE(sat) (V)
0.1
0.03
Collector current, I C (A)
Fig.5 Safe operation area
16
f=15.75kHz
SOA for a single
plusc caused by EHT
flashover load during
horizontal operattion
Collector current, I C (A)
14
12
10
8
6
4
2
0
0
400
800
1200
1600
2000
2400
Collector - Emitter voltage, V CE (V)
Thermal resistance, R th(t) (°C/W)
Fig.6 Thermal resistance (from junction to tab)
10 2
(1) Without heat sink
(2) With a 100x100x2mm
Al heak sink
10
(1)
(2)
1
10 -1
10 -2
10 -4
10 -3
10 -2
10 -1
1
Time, t (s)
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1
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10
10 -2
10 -3
10 -4
3
10