RoHS RoHS TTA1943 SEMICONDUCTOR Nell High Power Products Silicon PNP triple diffusion planar transistor -15A/-230V/150W 5.00 20.00±0.20 18.00 3.00 6.00 26.00 2.00 9.00 4.00 ø3.30±0.20 TO-3PL 20.50 2.50 3.00 2.50 (typ.) FEATURES High-speed switching High collector-emitter voltage: VCEO = -230V(min) Complementary to TTC5200 TO-3PL package which can be installed to the heat sink with one screw 1.00 (typ.) 5.45±0.05 0.60 3.20 5.45±0.05 1 2 3 C (2) 1. BASE 2. COLLECTOR (HEAT SINK) APPLICATIONS B (1) 3. EMITTER PNP E (3) Power amplifier Recommended for 100W high-fidelity audio frequency amplifier output stage All dimensions in millimeters ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) PARAMETER SYMBOL VALUE VCBO Collector to base voltage -230 V CEO Collector to emitter voltage -230 V EBO UNIT V -5 Emitter to base voltage IC Collector current -15 I CP Peak collector current, tp ≤ 5ms -30 IB Base current -1.5 PC Collector power dissipation Tj Junction temperature 150 T stg Storage temperature -55 to 150 A T C = 25°C 150 W ºC www.nellsemi.com Page 1 of 3 TTA1943 SEMICONDUCTOR RoHS RoHS Nell High Power Products ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL CONDITIONS PARAMETER MIN MAX TYP ICBO Collector cutoff current V CBO = -230V, l E = 0 -5.0 I EBO Emitter cutoff current V EBO = -5V, l C = 0 -5.0 Collector to emitter breakdown voltage l CEO = -50mA, I B = 0 -230 V CBO Collector to base voltage l CBO = -50mA -230 V EBO Emitter to base voltage l EBO = -0.1mA -5 V CE = -5V, l C = -1A 80 V CE = -5V, l C = -7A 35 UNIT µA V (BR)CEO Forward current transfer ratio (DC current gain) h FE V CE(sat) V 160 Collector to emitter voltage l C = -8A, I B = -0.8V -3.0 Base to emitter voltage l C = -7A, V CE = -5V -1.5 Transition frequency V CE = -5V, l C = -1A Collector output capacitance V CB = -10V, l E = 0, f = 1MHz V V BE fT C ob Fig.1 l C -V CE Characteristics -400 -12 mA DC Current Gain, h FE Collector current, l C (A) 240 pF 1000 Common emitter T C = 25°C Single pulse test A -300m -2 0 0 m A -8 -150mA -100mA -60mA -4 T C = 100°C -55°C 10 Common emitter V CE = -5V Single pulse test l B = -20mA 0 -4 -2 -6 -8 25°C 100 -40mA 1 -0.001 0 -10 Collector emitter voltage, V CE (V) -1 -0.01 -0.00 -0.001 T C = 25°C Common emitter I C /I B = 10 Single pulse test T C = -55°C -0.01 -0.1 -1 -10 -100 Collector current, I C (A) www.nellsemi.com -0.1 -10 -1 -100 Fig.4 V BE (sat) - I C Temperature Characteristics Base -Emitter Saturation Voltage, V BE(sat) (V) -10 T C = 100°C -0.01 Collector Current, l C (A) Fig.3 V CE (sat) - I C Temperature Characteristics Collector-Emitter Saturation Voltage, V CE(sat) (V) MHz Fig.2 h FE -l C Characteristics -16 -0.1 30 -10 -1 -55°C T C = 100°C 25°C -0.1 -0.001 -0.01 Common emitter I B /I B = 10V Single pulse test -0.1 -1 -10 Collector current, l C (A) Page 2 of 3 -100 TTA1943 SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.5 I C - V BE Temperature Characteristics Fig.6 P C -Ta Derating Collector Power Dissipation, P C (W) Collector Current, l C (A) -16 -12 -8 -55°C T C = 100°C 25°C -4 Common emitter V CE = 5V Single pulse test 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 200 150 Infinite heat sink 100 50 0 0 -2.4 Base-Emitter Voltage, V BE (V) 50 100 150 Ambient Temperature, T a (°C) Fig.7 Transient thermal resistance Transient thermal resistance, R th(j-c) (°C/W) 10 Curves apply only to limited areas of thermal resistance. Single nonrepetitive pulse T C = 25°C Infinite heat sink 1 0.1 0.01 0.001 0.01 10 1 0.1 Pulse width, t (s) Fig.8 Safe Operating Area (SOA) -100 -10 1ms* 10ms* DC operation T C = 25°C 100ms* -1 -0.1 *Single nonrepetitive pulse T C = 25°C Curves must be derated linearly with increase in temperature. -0.01 -1 -10 V CEO MAX Collector Current, l C (A) I C MAX (Pulse)* I C MAX (continuous) -100 Collector-Emitter Voltage, V CE (V) www.nellsemi.com Page 3 of 3 -1000 100 200