10N80 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products N-Channel Power MOSFET 10A, 800Volts DESCRIPTION D The Nell 10N80 is a three-terminal silicon device with current conduction capability of 10A, fast switching speed, low on-state resistance, breakdown voltage rating of 800V, and max. threshold voltage of 5 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. G G D S DS TO-3PB (10N80B) FEATURES TO-220F (10N80AF) D (Drain) RDS(ON) = 1.1Ω @ VGS = 10V Ultra low gate charge(58nC max.) Low reverse transfer capacitance (C RSS = 15pF typical) G (Gate) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature S (Source) PRODUCT SUMMARY ID (A) 10 VDSS (V) 800 RDS(ON) (Ω) 1.1 @ V GS = 10V QG(nC) max. 58 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER VALUE VDSS Drain to Source voltage T J =25°C to 150°C 800 V DGR Drain to Gate voltage R GS =20KΩ 800 V GS ID Gate to Source voltage Continuous Drain Current T C =25°C 10 T C =100°C 6.2 A Pulsed Drain current(Note 1) 40 I AR Avalanche current(Note 1) 10 E AR Repetitive avalanche energy(Note 1) l AR =10A, R GS =50Ω, V GS =10V E AS Single pulse avalanche energy(Note 2) l AS =10A, L =17.3mH Peak diode recovery dv/dt(Note 3) T C =25°C PD Linear derating factor above T C =25 ° C T STG TL mJ 920 T C =25°C TO-3PB 240 TO-220F 37 TO-3PB 1.92 TO-220F 0.296 ° C/W -55 to 150 Storage temperature -55 to 150 Maximum soldering temperature, for 10 seconds 1.6mm from case Page 1of 6 ºC 300 10 (1.1) Note: 1. Repetitive rating: pulse width limited by junction temperature. 2 . l AS =10 A, L =17.3 mH , V DD =50 V , R GS =25 Ω , starting T J =25 °C. 3 . I SD ≤ 10 A, di/dt ≤ 200 A/µs, V DD ≤ V (BR)DSS , starting T J = 25 °C. V /ns W Operation junction temperature Mounting torque, #6-32 or M3 screw www.nellsemi.com 24 4 Total power dissipation TJ V ±30 I DM dv/dt UNIT lbf . in (N . m) 10N80 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products THERMAL RESISTANCE SYMBOL Rth(j-c) PARAMETER MIN. Thermal resistance, junction to case TYP. MAX. UNIT TO-3PB 0.52 TO-220F 3.4 TO-3PB 40 TO-220F 62.5 ºC/W Rth(j-a) Thermal resistance, junction to ambient ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER MIN. TYP. MAX. UNIT OFF CHARACTERISTICS V(BR)DSS ▲V (BR)DSS/▲T J I DSS Drain to source breakdown voltage I D = 250μA, V GS = 0V Breakdown voltage temperature coefficient I D = 250μA, V DS =V GS Drain to source leakage current 800 V V/ºC 0.98 V DS =800V, V GS =0V T C =25°C V DS =640V, V GS =0V T C =125°C 10 μA 100 Gate to source forward leakage current V GS = 30V, V DS = 0V 100 Gate to source reverse leakage current V GS = -30V, V DS = 0V -100 I GSS nA ON CHARACTERISTICS R DS(ON) Static drain to source on-state resistance V GS =10V, l D =5A V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA 0.9 3 1.1 Ω 5 V DYNAMIC CHARACTERISTICS C ISS Input capacitance C OSS Output capacitance C RSS Reverse transfer capacitance V DS =25V, V GS =0V, f=1MHz 2150 2800 180 230 15 20 50 110 130 270 90 190 80 170 45 58 pF SWITCHING CHARACTERISTICS t d(ON) tr t d(OFF) tf QG Turn-on delay time Rise time Turn-off delay time V DD =400V, V GS =10V I D =10A, R GS =25Ω (Note1,2) Fall time Total gate charge Q GS Gate to source charge Q GD Gate to drain charge (Miller charge) V DD = 640V, V GS =10V I D =10A, (Note1,2) 13.5 ns nC 17 SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL VSD Is (Is D ) TEST CONDITIONS PARAMETER MIN. TYP. MAX. UNIT V Diode forward voltage I SD = 10A, V GS = 0V 1.4 Continuous source to drain current Integral reverse P-N junction diode in the MOSFET 10 D (Drain) TO-220F I SM Pulsed source current A 40 G (Gate) S (Source) t rr Reverse recovery time Q rr Reverse recovery charge I SD = 10A, V GS = 0V, dI F /dt = 100A/µs Note: 1. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. www.nellsemi.com Page 2of 6 730 ns 10.9 μC 10N80 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION SCHEME 10 N 80 B Current rating, ID 10 = 10A MOSFET series N = N-Channel Voltage rating, VDS 80 = 800V Package type B = TO-3PB AF = TO-220F ■ TEST CIRCUITS Fig.1A Peak diode recovery dv/dt test circuit D.U.T. Fig.1B Peak diode recovery dv/dt waverforms + V GS (Driver) Period D= P.W. P.W. Period V DS V GS =10V + - l SD (D.U.T) l FM , Body Diode forward current di/dt L l RM Body Diode Reverse Current RG Driver V GS Same Type as D.U.T. * dv/dt controlled by R G * l SD controlled by pulse period * D.U.T.-Device under test V DD V DS (D.U.T) Body Diode Recovery dv/dt V DD Body Diode www.nellsemi.com Page 3of 6 Forward Voltage Drop 10N80 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ■ TEST CIRCUIT(Cont.) Fig.2A Switching test circuit Fig.2B Switching Waveforms V DS RL 90% V DS V GS RG V DD D.U.T. V GS 10% 10V t d(ON) Pulse Width ≤ 1µs Duty Factor ≤ 0.1% t d(OFF) tR Fig.3A Gate charge test circuit tF Fig.3B Gate charge waveform V GS Same Type as D.U.T. 50kΩ 12V 0.2µF QG 10V 0.3µF V DS Q GS Q GD V GS D.U.T. 3mA Charge Fig.4A Unclamped lnductive switching test circuit Fig.4B Unclamped lnductive switching waveforms L V DS BV DSS l AS RG V DD l D(t) V DS(t) D.U.T. V DD 10V tp Time tp www.nellsemi.com Page 4of 6 10N80 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ■ TYPICAL CHARACTERISTICS Fig.1 Drain current vs. Source to drain voltage Fig.2 Drain-source on-state resistance characteristics 10 5 V GS = 10V l D = 5A 4 Drain current, l D (A) Drain Current, l D (A) 8 6 4 2 3 2 1 0 0 0 200 400 600 800 1000 0 1 2 3 5 4 Source to drain voltage, V SD (mV) Drain to Source voltage, V DS (V) Fig.3 Drain current vs. Gate threshold voltage Fig.4 Drain current vs. Drain-Source breakdown voltage 3 400 Drain current, l D ( µ A) Drain current, l D (mA) 2.5 2 1.5 1 350 300 250 200 150 100 0.5 50 0 0 1 2 3 0 4 Gate threshold voltage, V GS(TH) (V) www.nellsemi.com 0 200 400 600 800 1000 Drain-Source breakdown voltage, BV DSS (V) Page 5of 6 10N80 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products 1.8 4.0 4.8±0.2 2.0±0.1 Φ3.2 ± 0,1 2 4.0 max 20.0 min 19.9±0.3 2.0 15.6±0.4 9.6 5.0 ±0 . 2 TO-3PB 3 5.45±0.1 G D S 1 2 3 +0.2 1.05 -0.1 +0.2 0.65 -0.1 5.45±0.1 1.4 D (Drain) G (Gate) S (Source) All dimensions in millimeters 10.6 10.4 TO-220F 3.4 3.1 2.8 2.6 3.7 3.2 7.1 6.7 16.0 15.8 16.4 15.4 2 1 3 10° 3.3 3.1 13.7 13.5 2.54 TYP 0.9 0.7 0.48 0.44 2.54 TYP 2.85 2.65 4.8 4.6 D (Drain) G (Gate) S (Source) All dimensions in millimeters www.nellsemi.com Page 6of 6