IRF150 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products N-Channel Power MOSFET 42A, 100Volts DESCRIPTION D The Nell IRF150 is a three-terminal silicon device with current conduction capability of 42A, fast switching speed, low on-state resistance, breakdown voltage rating of 100V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies, DC to DC converters, motor control circuits, UPS and general purpose switching applications. G G D S D S TO-3PB (IRF150B) TO-247AB (IRF150C) D (Drain) FEATURES RDS(ON) = 0.055Ω @ VGS = 10V G (Gate) Ultra low gate charge(110nC Max.) Low reverse transfer capacitance (C RSS = 230pF typical) S (Source) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 175°C operation temperature PRODUCT SUMMARY ID (A) 42 VDSS (V) 100 RDS(ON) (Ω) 0.055 @ V GS = 10V QG(nC) max. 110 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER VALUE VDSS Drain to Source voltage T J =25°C to 150°C 100 V DGR Drain to Gate voltage R GS =20KΩ 100 V GS ID Gate to Source voltage UNIT V ±20 Continuous Drain Current (V GS =10V) T C =25°C 42 T C =100°C 30 A I DM Pulsed Drain current(Note 1) I AR Avalanche current(Note 1) E AR Repetitive avalanche energy(Note 1) l AR =22A, R GS =50Ω, V GS =10V E AS Single pulse avalanche energy(Note 2) l AS =22A, L =1.7mH 160 22 16 mJ dv/dt Peak diode recovery dv/dt(Note 3) Total power dissipation PD TJ T STG TL T C =25°C Derate above 25 ° C 5.0 V /ns 160 W 1.1 W /°C Operation junction temperature -55 to 175 Storage temperature -55 to 175 Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw 1.6mm from case Page 1 of 7 ºC 300 10 (1.1) Note: 1. Repetitive rating: pulse width limited by junction temperature. 2 . l AS =22 A, L =1.7 mH , V DD =50 V , R G =25 Ω , starting T J =25 °C. 3 . I SD ≤ 22 A, di/dt ≤ 180 A/µs, V DD ≤ V (BR)DSS , starting T J < 150 °C. www.nellsemi.com 420 lbf . in (N . m) IRF150 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products THERMAL RESISTANCE SYMBOL PARAMETER Rth(j-c) Thermal resistance, junction to case Rth(c-s) Thermal resistance, case to heat sink Rth(j-a) Thermal resistance, junction to ambient MIN. TYP. MAX. UNIT 0.95 ºC/W 0.24 40 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER MIN. TYP. MAX. UNIT STATIC V(BR)DSS ▲V (BR)DSS/▲T J I DSS Drain to source breakdown voltage I D = 250μA, V GS = 0V Breakdown voltage temperature coefficient I D = 1mA, V DS =V GS Drain to source leakage current 100 V V/ºC 0.11 V DS =100V, V GS =0V T C = 25°C 25.0 V DS =80V, V GS =0V T C =125°C 250 μA Gate to source forward leakage current V GS = 20V, V DS = 0V 100 Gate to source reverse leakage current V GS = -20V, V DS = 0V -100 R DS(ON) Static drain to source on-state resistance I D = 25A, V GS = 10V 0.055 Ω V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA 2.0 4.0 V Forward transconductance V DS = 25V, l D = 25A 13 I GSS g fs nA S DYNAMIC C ISS Input capacitance C OSS Output capacitance C RSS Reverse transfer capacitance t d(ON) Turn-on delay time tr t d(OFF) tf QG Rise time Turn-off delay time 1900 V DS = 25V, V GS = 0V, f =1MHz pF 450 230 11 V DD = 50V, V GS = 10V I D = 22A, R G = 3.6Ω, R D = 2.9Ω (Note1,2) 56 ns 45 Fall time 40 Total gate charge Q GS Gate to source charge Q GD Gate to drain charge (Miller charge) LD Internal drain inductance LS Internal source inductance 110 V DD = 80V, V GS = 10V I D = 22A, (Note1,2) 15 nC 58 5 Between lead, 6mm(0.25”) form package and center of die contact nH 13 SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL VSD Is (Is D ) TEST CONDITIONS PARAMETER MIN. TYP. MAX. UNIT V Diode forward voltage I SD = 42A, V GS = 0V 2.5 Continuous source to drain current Integral reverse P-N junction diode in the MOSFET 42 D (Drain) A I SM Pulsed source current 160 G (Gate) S (Source) t rr Reverse recovery time Q rr Reverse recovery charge I SD = 42A, V GS = 0V, dI F /dt = 100A/µs Note: 1. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2%. 2. Essentially independent of operating temperature. www.nellsemi.com Page 2 of 7 220 330 ns 1.9 2.9 μC IRF150 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION SCHEME IRF 150 B MOSFET series N-Channel,IRF series Current and Voltage rating, ID & VDS 42A / 100V Package type B = TO-3PB C = TO-247AB ■ TYPICAL CHARACTERISTICS Fig.2 Typical output characteristics, T C =175°C Fig.1 Typical output characteristics, T C =25°C 1000 V GS Top: 15V 10V 8V 7V 6V 5.5V 5V Bottorm: 4.5V 100 Drain Current, I D (A) Drain Current, l D (A) 1000 10 4.5V 4.5V 1 100 10 1 0.1 10 Note: 1. 20µs Pulse Test 2. T C = 175°C Note: 1. 20µs Pulse Test 2. T C = 25°C 1 100 V GS Top: 15V 10V 8V 7V 6V 5.5V 5V Bottorm: 4.5V 1 0.1 100 10 Drain-Source voltage, V DS (V) Drain-Source voltage, V DS (V) Fig.4 Normalized On-Resistance vs. Temperature Fig.3 Typical transfer characteristics 3.0 100 Drain-Source On-Resistance, R Ds(ON) (Normalized) Drain current, l D (A) 1000 T J =25 ºC T J =175ºC 10 1 4 5 6 7 8 9 2.0 1.5 1.0 0.5 I D = 36A V GS = 10V 0.0 -60 -40 -20 10 0 20 40 60 80 100 120 140 160 Junction temperature, T j (°C) Gate-Source voltage, V GS (V) www.nellsemi.com 2.5 Page 3 of 7 IRF150 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.5 Typical capacitance vs. Drain-to-Source voltage Fig.6 Typical source-drain diode forward voltage 3500 1000 Capacitance (pF) 3000 Reverse drain current,I SD (A) V GS = 0V, f = 1MHz C iss = C gs +C gd ( C ds shorted ) C oss = C ds +C gd C rss = C gd 2500 C iss 2000 1500 1000 C oss 500 C rss 100 10 1 V GS = 0V 0.1 0 0.2 100 10 1 Drain- Source voltage, V SD (V) 1.0 1.2 1.4 1.6 Fig.8 Maximum safe operating area 1000 20 Operation in This Area is Limited by R DS(ON) V DS = 80V 16 V DS = 50V Drain current, l D (A) Gate-Source voltage, V GS (V) 0.8 0.6 Source- Drain voltage, V SD (V) Fig.7 Typical gate charge vs. gate-to-source voltage V DS = 20V 12 8 100 10µs 100µs 10 1ms Note: 1. T C = 25°C 2. T J = 175°C 3. Single Pulse 4 I D = 22 A 10ms 1 0 20 0 40 60 80 100 120 Total gate charge, Q G (nC) 50 40 30 20 10 0 25 50 75 100 125 150 175 Case temperature, T C (°C) www.nellsemi.com 1 10 100 Drain-source voltage, V DS (V) Fig.9 Maximum drain current vs. Case temperature Drain current, l D (A) 0.4 Page 4 of 7 1000 IRF150 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Thermal response R th(J-C) (t) Fig.10 Maximum effective transient thermal impedance, Junction-to-Case 10 1 D ~ 0.5 PDM 0.2 t1 0.1 0.05 0.02 0.01 0.1 t2 Single pulse (Thermal response) 0.01 0.00001 0.0001 Notes: 1. Duty factor, D = t1/ t2 2. Peak TJ = PDM * Rth(j-c) +TC 0.01 0.001 1 0.1 Rectangular pulse duration, t 1 (S) Fig.11a. Switching time test circuit Fig.11b. Switching time waveforms RD V DS V DS 90% V GS RG D.U.T. + - V DD 10V V GS Pulse width ≤ 1µs Duty Factor ≤ 0.1% 10% t d(ON) t d(OFF) tR Fig.12a. Unclamped lnductive test circuit tF Fig.12b. Unclamped lnductive waveforms 15V BV DSS L V DS DRIVER l AS l D(t) RG D.U.T. l AS + V - DD V DS(t) V DD A 20V tP 0.01Ω Time tp Vary t p to obtain required I AS www.nellsemi.com Page 5 of 7 IRF150 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.12c. Maximum avalanche energy vs. Drain current Single pulse energy, E AS (mJ) 1000 lD 9.0A 16A BOTTOM 22A TOP 800 600 400 200 0 25 75 50 100 125 175 150 Starting Junction temperature, T J (°C) Fig.13a. Basic gate charge waveform Fig.13b. Gate charge test circuit Current Regulator Same Type as D.U.T. V GS 50KΩ QG 0.2µF 12V 10V 0.3µF + Q GD Q GS D.U.T. V GS 3mA RG Charge RD Current Sampling Resistors Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET D.U.T. Driver Gate Drive + Circuit Layout Considerations • Low Stray lnductance • Ground Plane • Low Leakage lnductance Current Transformer P.W. D= Period P.W. Period VGS=10V - * D.U.T. I SD Waveform + - - RG Reverse Recovery Current + Body Diode Forward Current di/dt D.U.T. VDS Waveform • • • • dv/dt controlled by R G Driver same type as D.U.T. l SD controlled by Duty Factor " D " D.U.T. -Device Under Test Re-Applied Voltage + - V DD Diode Recovery dv/dt Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD *V GS = 5V for Logic Level Devices and 3V for drive devices www.nellsemi.com Page 6 of 7 - V DS IRF150 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products 1.8 4.8±0.2 2.0±0.1 4.0 19.9±0.3 2.0 15.6±0.4 9.6 5.0 ±0 . 2 TO-3PB 2 4.0 max 20.0 min Φ3.2 ± 0,1 3 5.45±0.1 G D S 1 2 3 +0.2 1.05 -0.1 +0.2 0.65 -0.1 5.45±0.1 1.4 D (Drain) G (Gate) All dimensions in millimeters(inches) S (Source) TO-247AB 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 15.49 (0.610) 16.26 (0.640) 20.80 (0.819) 21.46 (0.845) Drain 5.38 (0.212) 6.20 (0.244) 16.15 (0.242) 3.55 (0.138) 3.81 (0.150) G 4.50 (0.177)Max D S 2.87 (0.113) 3.12 (0.123) 1.65 (0.065) (TYP.) 2.13 (0.084) 19.81 (0.780) 20.32 (0.800) 0.40 (0.016) 0.79 (0.031) 1.01 (0.040) 1.40 (0.055) (TYP.) 5.45 (0.215) 5.45 (0.215) 2.21 (0.087) 2.59 (0.102) D (Drain) All dimensions in millimeters(inches) G (Gate) S (Source) www.nellsemi.com Page 7 of 7