IRF1010 Series

RoHS
RoHS
IRF1010 Series
SEMICONDUCTOR
Nell High Power Products
N-Channel Power MOSFET
(84A, 60Volts)
DESCRIPTION
The Nell IRF1010 is a three-terminal silicon
device with current conduction capability
of 84A, fast switching speed, low on-state
resistance, breakdown voltage rating of 60V,
and max. threshold voltage of 4 volts.
They are designed as an extremely efficient
and reliable device for use in a wide variety of
applications. These transistors can be operated
directly from integrated circuits.
D
D
G
G
D
FEATURES
S
S
TO-263(D2PAK)
(IRF1010H)
TO-220AB
(IRF1010A)
RDS(ON) = 8.5mΩ @ VGS = 10V
D
Ultra low gate charge(86nC max.)
Low reverse transfer capacitance
(C RSS = 200pF typical)
Fast switching capability
100% avalanche energy specified
D (Drain)
Improved dv/dt capability
175°C operation temperature
PRODUCT SUMMARY
ID (A)
84
ID (A), Package Limited
75
VDSS (V)
60
RDS(ON) (mΩ)
8.5 @ V GS = 10V
QG(nC) max.
86
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
VALUE
VDSS
Drain to Source voltage
T J =25°C to 150°C
60
V DGR
Drain to Gate voltage
R GS =20KΩ
60
V GS
ID
Gate to Source voltage
UNIT
V
±20
V GS =10V, T C =25°C
84
V GS =10V, T C =100°C
60
Continuous Drain Current (Note 1)
A
I DM
Pulsed Drain current(Note 2)
I AR
Avalanche current(Note 2)
E AR
Repetitive avalanche energy(Note 2 )
See fig.12,16,17
E AS
Single pulse avalanche energy(Note 3)
L=0.077mH, I AS =51A
dv/dt
Peak diode recovery dv/dt(Note 4)
340
51
mJ
PD
Total power dissipation
T C =25°C
Derating factor above 25 ° C
TJ
T STG
TL
99
5
V /ns
140
W
0.90
W /°C
Operation junction temperature
-55 to 175
Storage temperature
-55 to 175
Maximum soldering temperature, for 10 seconds
Mounting torque, #6-32 or M3 screw
1.6mm from case
300
10 (1.1)
Note: 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75 A .
2 . Repetitive rating: pulse width limited by junction temperature.
3 . L=0.077mH, I AS≤51A, R G =25Ω, starting T J =25˚C
4 . I SD ≤ 51 A, di/dt ≤ 260 A/µs, V DD ≤ V (BR)DSS , T J ≤ 175 °C.
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Page 1 of 7
ºC
lbf . in (N . m)
RoHS
RoHS
IRF1010 Series
SEMICONDUCTOR
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(c-s)
Thermal resistance, case to heatsink
Rth(j-a)
Thermal resistance, junction to ambient
Min.
Typ.
UNIT
Max.
1.11
ºC/W
0.50
62
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
V(BR)DSS
▲V (BR)DSS/▲T J
I DSS
TEST CONDITIONS
PARAMETER
Drain to source breakdown voltage
V GS = 0V, I D = 250µA
Breakdown voltage temperature coefficient
I D = 1mA, referenced to 25°C
Drain to source leakage current
Min.
Typ.
Max.
60
V
V/ºC
0.058
V DS =60V, V GS =0V
T C = 25°C
20
V DS =48V, V GS =0V
T C =150°C
250
μA
Gate to source forward leakage current
V GS = 20V, V DS = 0V
200
Gate to source reverse leakage current
V GS = -20V, V DS = 0V
-200
R DS(ON)
Static drain to source on-state resistance
V GS = 10V, l D = 51A (Note 1)
V GS(TH)
Gate threshold voltage
V GS =V DS , I D =250μA
Forward transconductance
V DS =25V, I D =51A
I GSS
g fS
nA
C ISS
Input capacitance
C OSS
Output capacitance
C RSS
Reverse transfer capacitance
t d(ON)
Turn-on delay time
tr
t d(OFF)
UNIT
Rise time
Turn-off delay time
tf
Fall time
LD
Internal drain inductance
LS
Internal source inductance
QG
Total gate charge
Q GS
Gate to source charge
Q GD
Gate to drain charge (Miller charge)
6.8
8.5
mΩ
4
V
2
200
S
2810
V DS = 25V, V GS = 0V, f =1MHz
pF
420
200
19
90
V DD = 30V, I D = 51A,R G = 7.95Ω,
V GS = 10V (Note 1)
ns
38
54
4.5
Between lead, 6mm from
package and center of die
nH
7.5
V DS = 48V, V GS = 10V, I D = 51A
58
86
19
28
21
32
nC
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
VSD
I s (Is D )
PARAMETER
TEST CONDITIONS
Min.
Typ.
Max.
UNIT
V
Diode forward voltage
I SD = 51A, V GS = 0V
1.3
Continuous source to drain current
Integral reverse P-N junction
diode in the MOSFET
84
D (Drain)
I SM
Pulsed source current
340
A
41
62
ns
54
81
nC
G
(Gate)
S (Source)
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I SD = 51A, V GS = 0V, V DD =30V
dI F /dt = 100A/µs (Note1)
t ON
Forward turn-on time
Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD)
Note: 1. Pulse test: Pulse width ≤ 1.0ms, duty cycle ≤ 2%
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IRF1010 Series
SEMICONDUCTOR
RoHS
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Nell High Power Products
ORDERING INFORMATION SCHEME
1010
IRF
A
MOSFET series
N-Channel, IR series
Current & Voltage rating, lD & VDS
84A / 60V
Package type
A = TO-220AB
H = TO-263 (D2PAK)
Fig.1 Typical output characteristics
1000
V GS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
1000
100
10
1
4.5V
0.1
0.1
1
20µs pulse width
T J =25°C
100
10
Drain-to-Source Current,l D (A)
Drain-to-Source Current,l D (A)
10000
Fig.2 Typical output characteristics
V GS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
100
10
4.5V
1
20µs pulse width
T J =175°C
0.1
0.01
Drain-to-Source voltage, V DS (V)
100
Drain-to-Source voltage, V DS (V)
Fig.4 Typical forward transconductance
vs. drain current
Fig.3 Typical transfer characteristics
1000
100
100
Forward transconductance, G fs (S)
Drain-to-Source Current,l D (A)
10
1
0.1
T J = 175°C
10
T J = 25°C
1
0.1
5
4
6
7
8
9
T J = 25°C
70
60
T J = 175°C
50
40
30
20
10
0
0
10
Gate-to-Source voltage, V GS (V)
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90
80
20
40
60
80
100
120
Drain-to-source current ,I D (A)
Page 3 of 7
140
IRF1010 Series
SEMICONDUCTOR
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Nell High Power Products
Fig.6 Typical gate charge vs. Gate-to-Source
voltage
Fig.5 Typical capacitance vs. Drain-to-Source
voltage
12
V GS = 0V, f =1MHZ
C iss = C gs +C gd ( C ds = shorted )
C rss = C gd
C oss = C ds +C gd
l D = 51A
Gate-to-Source voltage,V GS (V)
Capacitance,C (pF)
100000
10000
Ciss
1000
Coss
Crss
10
V DS = 48V
V DS = 30V
V DS = 12V
8
6
4
2
0
0
10
1
0
100
Drain-to-Source voltage, V DS (V)
30
40
50
60
Total gate charge, Q G (nC)
Fig.8 Maximum safe operating area
Fig.7 Typical Source-Drain diode forward
voltage
10000
1000
1000
Drain current, l D (A)
Reverse drain current, l SD (A)
20
10
100
T J = 17 5°C
T J = 25 °C
10
1
Operation in This Area is Limited by R DS(ON)
100
100µs
1ms
10
Note:
1. T C = 25°C
2. T J = 175°C
3. Single Pulse
1
V GS = 0V
0.1
1
0.1
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
10
Drain-to-Source voltage, V DS (V)
Source-to-Drain voltage, V SD (V)
Fig.9 Normalized on-resistance vs.
temperature
Drain-to-source on resistance
(normalized), R DS(on)
2.5
l D =84A
2
1.5
1
V GS =10V
0.5
-20 -40 -60
0 20 40 60 80 100 120 140 160 180
Junction temperature, T J ( ° C)
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10ms
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100
IRF1010 Series
SEMICONDUCTOR
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Fig.10 Maximum effective transient thermal lmpedance,
Junction-to-Case
Thermal response, Rth(j-c) (°C/W)
10
1
D = 0.5
0.2
0.1
0.1
R1
0.05
τJ
0.02
0.01
Single pulse
(Thermal response)
0.01
R2
τ2
τ1
τC
τ
Ci = i/Ri
0.001
10 -6
10 -5
0.0001
Ri (°C/W)
τi (sec)
0.415
0.000246
0.410
0.000898
0.285
0.000954
Notes:
1. Duty factor, D = t1/ t2
2. Peak Tj = PDM * Rth(j-c) +TC
0.01
0.001
0.1
Rectangular Pulse Duration, t 1 (sec)
Fig.11a. Switching time test circuit
Fig.11b. Switching time waveforms
RD
V DS
V DS
90%
V GS
RG
D.U.T.
+
- V DD
10V
V GS
Pulse width ≤ 1µs
Duty Factor ≤ 0.1%
10%
t d(ON)
t d(OFF)
tR
Fig.12a. Unclamped lnductive test circuit
tF
Fig.12b. Unclamped lnductive waveforms
15V
BV DSS
l AS
L
V DS
DRIVER
l D(t)
V DS(t)
RG
D.U.T.
l AS
+
V
- DD
V DD
A
20V
tP
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Time
0.01Ω
tp
Page 5 of 7
RoHS
RoHS
IRF1010 Series
SEMICONDUCTOR
Nell High Power Products
Single pulse avalanche energy, E AS (mJ)
Fig.12c. Maximum avalanche energy vs.
drain current
400
ID
5.7A
9.1A
BOTTOM 51A
350
TOP
300
250
200
150
100
50
0
50
25
100
75
125
150
175
Junction temperature, T J (°C)
Fig.13a. Basic gate charge waveform
Fig.13b. Gate charge test circuit
Current Regulator
Same Type as D.U.T.
V GS
50KΩ
QG
0.2µF
12V
10V
0.3µF
+
Q GD
Q GS
-
D.U.T.
V DS
V GS
3mA
lG
Charge
lD
Current Sampling Resistors
Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET
D.U.T.
Driver Gate Drive
+
Circuit Layout Considerations
• Low Stray lnductance
• Ground Plane
• Low Leakage lnductance
Current Transformer
P.W.
D=
Period
P.W.
Period
VGS=10V
-
D.U.T. I SD Waveform
+
-
-
RG
Reverse
Recovery
Current
+
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
•
•
•
•
dv/dt controlled by R G
Driver same type as D.U.T.
l SD controlled by Duty Factor " D "
D.U.T. -Device Under Test
Re-Applied
Voltage
+
-
V DD
Diode Recovery
dv/dt
Body Diode
Forward Drop
Inductor Curent
Ripple ≤ 5%
*V GS = 5V for Logic Level Devices
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VDD
ISD
*
IRF1010 Series
SEMICONDUCTOR
RoHS
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Nell High Power Products
Fig.18 Maximum drain current vs.
Case temperature
120
LIMITED BY PACKAGE
Drain Current, l D (A)
100
80
60
40
20
0
50
25
100
75
125
150
175
Case temperature, T C ( ° C)
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
1
PIN
2
15.32 (0.603)
14.55 (0.573)
16.13 (0.635)
15.87 (0.625)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
3
4.06 (0.160)
3.56 (0.140)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
0.56 (0.022)
0.36 (0.014)
5.20 (0.205)
4.95 (0.195)
TO-263(D 2 PAK)
10.45 (0.411)
9.65 (0.380)
4.83 (0.190)
4.06 (0.160)
6.22 (0.245)
9.14 (0.360)
8.13 (0.320)
1.40 (0.055)
1.14 (0.045)
1.40 (0.055)
1.19 (0.047)
15.85 (0.624)
15.00 (0.591)
0 to 0.254 (0 to 0.01)
2.79 (0.110)
2.29 (0.090)
0.940 (0.037)
0.686 (0.027)
D (Drain)
0.53 (0.021)
0.36 (0.014)
2.67 (0.105)
2.41 (0.095)
3.56 (0.140)
5.20 (0.205)
4.95 (0.195)
2.79 (0.110)
G
(Gate)
S (Source)
All dimensions in millimeters(inches)
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