13N60 Series

13N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
N-Channel Power MOSFET
13A, 600Volts
DESCRIPTION
The Nell 13N60 is a three-terminal silicon
device with current conduction capability of
13A, fast switching speed, low on-state
resistance, breakdown voltage rating of 600V,
and max. threshold voltage of 4 volts.
They are designed for use in applications such
as switched mode power supplies. DC to DC
converters, PWM motor controls, bridge circuits
and general purpose switching applications.
D
G
FEATURES
D
GD
S
TO-220F
(13N60AF)
TO-220AB
(13N60A)
RDS(ON) = 0.26Ω @ VGS = 10V
S
Ultra low gate charge(40nC max.)
Low reverse transfer capacitance
(C RSS = 3pF typical)
Fast switching capability
100% avalanche energy specified
D (Drain)
Improved dv/dt capability
150°C operation temperature
PRODUCT SUMMARY
ID (A)
13
VDSS (V)
600
RDS(ON) (Ω)
0.26 @ V GS = 10V
QG(nC) max.
40
G
(Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
VALUE
VDSS
Drain to Source voltage
T J =25°C to 150°C
600
V DGR
Drain to Gate voltage
R GS =20KΩ
600
V GS
ID
Gate to Source voltage
UNIT
V
±30
T C =25°C
13
T C =100°C
8.2
Continuous Drain Current
A
I DM
Pulsed Drain current(Note 1)
39
I AR
Avalanche current(Note 1)
4.3
E AR
Repetitive avalanche energy(Note 1)
l AR =4.3A,R GS =50Ω, V GS =10V
1.2
E AS
Single pulse avalanche energy (Note 2)
l AS =4.3A
235
mJ
dv/dt
PD
TJ
T STG
TL
100
MOSFET dv/dt ruggedness
20
Peak diode recovery dv/dt (Note 3)
TO-220AB
Total power dissipation (Derate above 25°C)
T C =25°C
TO-220F
116(0.93)
34(0.27)
Operation junction temperature
-55 to 150
Storage temperature
-55 to 150
Maximum soldering temperature, for 10 seconds
1.6mm from case
Mounting torque, #6-32 or M3 screw
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Page 1 of 8
W(W/°C)
ºC
300
10 (1.1)
Note: 1. Repetitive rating: pulse width limited by junction temperature. .
2 . I AS =4.3 A , V DD =50 V , R GS =25 Ω, starting T J = 25 °C.
3 . I SD ≤ 13 A, di/dt ≤ 200 A/µs, V DD ≤ V (BR)DSS , starting T J = 2 5 °C.
V /ns
lbf . in (N . m)
RoHS
RoHS
13N60 Series
SEMICONDUCTOR
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
Rth(j-c)
PARAMETER
Min.
Typ.
1.07
TO-220AB
Thermal resistance, junction to case
ºC/W
TO-220F
Rth(j-a)
UNIT
Max.
3.7
TO-220AB
62.5
TO-220F
62.5
Thermal resistance, junction to ambient
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
TEST CONDITIONS
PARAMETER
Min.
Typ.
Max.
UNIT
OFF CHARACTERISTICS
V(BR)DSS
▲V (BR)DSS/▲T J
I DSS
Drain to source breakdown voltage
I D = 1mA, V GS = 0V
Breakdown voltage temperature coefficient
I D = 1 m A, V DS =V GS
Drain to source leakage current
600
V
V/ºC
0.73
V DS =600V, V GS =0V
T C = 25°C
10
V DS =480V, V GS =0V
T C =125°C
100
Gate to source forward leakage current
V GS = 30V, V DS = 0V
100
Gate to source reverse leakage current
V GS = -30V, V DS = 0V
-100
I GSS
μA
nA
ON CHARACTERISTICS
R DS(ON)
Static drain to source on-state resistance
V GS = 10V, l D = 6.5A
V GS(TH)
Gate threshold voltage
V GS =V DS , I D =250μA
Forward transconductance
V DS =40V, I D =6.5A
gfs
0.24
2
0.26
Ω
4
V
S
16.3
DYNAMIC CHARACTERISTICS
C ISS
Input capacitance
C OSS
Output capacitance
C RSS
Reverse transfer capacitance
C OSS
Output capacitance
V DS = 380V, V GS = 0V, f =1MHz
Effective output capacitance
V DS = 0 to 480V, V GS = 0V
C OSS eff
QG
V DS = 100V, V GS = 0V, f =1MHz
Total gate charge
Q GS
Gate to source charge
Q GD
Gate to drain charge (Miller charge)
ESR
Equivalent series resistance (G-S)
1325
1765
50
65
3
5
30
145
30.5
V DD = 380V, V GS = 10V
I D = 6.5A, (Note1,2)
pF
40
nC
6.0
9.5
Drain open
Ω
2.8
SWITCHING CHARACTERISTICS
t d(ON)
tr
t d(OFF)
tf
Turn-on delay time
Rise time
Turn-off delay time
V DD = 380V, V GS = 10V
I D = 6.5A, R G =4.7Ω (Note1,2)
Fall time
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Page 2 of 8
14.5
39
10.5
31.5
45
100
10
30
ns
13N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
VSD
I S (I SD )
TEST CONDITIONS
Min.
Typ.
Max.
UNIT
V
Diode forward voltage
I SD = 6.5A, V GS = 0V
1.2
Continuous source to drain current
Integral reverse P-N junction
diode in the MOSFET
13
D (Drain)
A
I SM
Pulsed source current
G
(Gate)
39
S (Source)
t rr
Reverse recovery time
Q rr
Reverse recovery charge
I SD = 6.5A, V GS = 0V,
dI F /dt = 100A/µs
280
ns
3.5
μC
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2% .
2. Essentially independent of operating temperature.
ORDERING INFORMATION SCHEME
13 N 60
A
Current rating, ID
13 = 13A
MOSFET series
N = N-Channel
Voltage rating, VDS
60 = 600V
Package type
A = TO-220AB
AF = TO-220F
■ TEST CIRCUITS AND WAVEFORMS
Fig.1A Peak diode recovery dv/dt test circuit
D.U.T.
Fig.1B Peak diode recovery dv/dt waverforms
+
V GS
(Driver)
Period
D=
P.W.
P.W.
Period
V DS
V GS =10V
+
-
l SD
(D.U.T)
l FM , Body Diode forward current
di/dt
L
l RM
Body Diode Reverse Current
RG
Driver
V GS
Same Type
as D.U.T.
* dv/dt controlled by R G
* l SD controlled by pulse period
* D.U.T.-Device under test
V DD
V DS
(D.U.T)
Body Diode Recovery dv/dt
V DD
Body Diode
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Page 3 of 8
Forward Voltage Drop
13N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
■ TEST CIRCUITS AND WAVEFORMS (Cont.)
Fig.2A Switching test circuit
Fig.2B Switching Waveforms
V DS
RL
90%
V DS
V GS
RG
V DD
D.U.T.
V GS
10%
10V
t d(ON)
t d(OFF)
tR
Pulse Width ≤ 1µs
Duty Factor ≤ 0.1%
Fig.3A Gate charge test circuit
tF
Fig.3B Gate charge waveform
V GS
Same Type as
D.U.T.
50kΩ
12V
0.2µF
QG
10V
0.3µF
V DS
Q GS
Q GD
V GS
D.U.T.
3mA
Charge
Fig.4A Unclamped lnductive switching test circuit
Fig.4B Unclamped lnductive switching
waveforms
L
V DS
BV DSS
l AS
RG
V DD
l D(t)
V DS(t)
D.U.T.
V DD
10V
tp
Time
tp
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Page 4 of 8
Nell High Power Products
■ TYPICAL CHARACTERISTICS
Fig.1 On-State characteristics
Fig.2 Transfer characteristics
40
60
V GS
15.0V
10.0V
8.0V
7.0V
6.5V
6.0V
5.5V
Bottom: 5.0V
10
Drain-Current, l D (A)
Drain Current,l D (A)
Top:
Notes:
1. 250µs pulse test
2. T C = 25°C
10
150°C
0.6
25 °C
1
Notes:
1. V DS =20V
2. 250µs pulse width
10
1
2
20
Drain Source voltage, V DS (V)
6
4
8
Gate-Source voltage, V GS (V)
Fig.3 On-Resistance variation vs.
Drain current and Gate voltage
Fig.4 Body diode forward voltage variation vs
Source current and Temperature
100
Reverse drain current, l DR (A)
0.8
0.6
V GS =10V
0.4
V GS =20V
0.2
150°C
10
25 °C
Notes:
1. V GS =0V
2. 250µs pulse Test
1
0
0
10
20
40
30
0.8
0.4
1.4
1.2
Drain current, l D (A)
Source-Drain voltage, V SD (V)
Fig.5 Capacitance characteristics
Fig.6 Gate charge characteristics
10
50000
C iss = C gs +C gd ( C ds = shorted )
C oss = C ds +C gs
C rss = C gd
10000
C iss
1000
100
C oss
10
Notes:
1. V GS =0V
2. f=1MHz
1
1
0.1
10
C rss
Gate-Source voltage, V GS (V)
Drain-Source On-Resistance, R DS(ON) (Ω)
-55°C
0.2
3
Capacitance (pF)
RoHS
RoHS
13N60 Series
SEMICONDUCTOR
V DS =380V
8
V DS =480V
6
4
2
Notes:
1. l D =6.5 A
0
100
600
0
Drain-Source Voltage, V DS (V)
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V DS =120V
10
20
30
Total gate charge ,Q G (nC)
Page 5 of 8
40
13N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.7b Maximum safe operating area
for 13N60AF
Fig.7a Maximum safe operating area
for 13N60A
100
100
Operation in This Area is Limited by R DS(ON)
Operation in This Area is Limited by R DS(ON)
10µs
Drain current, l D (A)
Drain current, l D (A)
100µs
10
1ms
10ms
DC
1
0.1
Note:
1. T C = 25°C
2. T J = 150°C
3. Single Pulse
0.01
0.1
10
1
100µs
10
1ms
10ms
1
DC
0.1
Note:
1. T C = 25°C
2. T J = 150°C
3. Single Pulse
0.01
0.1
1000
100
10µs
10
1
100
Drain-to-Source voltage, V DS (V)
Drain-to-Source voltage, V DS (V)
Fig.8a Transient thermal response curve for 13N60A
Thermal response, R th(j-c) (t)
2
1
D = 0.5
Thermal response, Rth(j-c)
0.2
Notes:
1.R th(j-c) (t)=1.07°C/W Max.
2.Duty factor, D=t 1 /t 2
3.T JM -T C =P DM×R th(j-c) (t)
0.1
0.1
0.05
0.02
0.01
PDM
(Single Pulse)
t1
T2
0.01
10 -4
10 -5
10 -3
10 -1
10 -2
Rectangular Pulse Duration, t 1 (sec)
Fig.8b Transient thermal response curve for 13N60AF
Thermal response, R th(j-c) (t)
5
D = 0.5
1
0.2
0.1
PDM
0.05
t1
0.1
0.02
T2
0.01
Notes:
1.R th(j-c) (t)=3.7°C/W Max.
2.Duty factor, D=t 1 /t 2
3.T JM -T C =P DM×R th(j-c) (t)
(Single Pulse)
0.01
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
Rectangular Pulse Duration, t 1 (sec)
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Page 6 of 8
10 1
10 2
1000
13N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.10 On-resistance variation vs.
temperature
Fig.9 Breakdown voltage variation
vs. temperature
3.0
Drain-source breakdown, BV DSS
1.2
Drain current, l D (A)
2.5
1.1
1.0
0.9
Notes:
1. V GS =0V
2. I D =1mA
0.8
-100
-50
0
50
100
150
Drain Current, I D (A)
12
9
6
3
0
100
125
150
Case Temperature, T C (°C)
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Notes:
1. V GS =10V
2. I D =6.5A
-50
0
50
100
150
Drain-to-Source voltage, V DS (V)
15
75
1.0
0.0
-100
200
Fig.11 Maximum drain current vs.case
temperature
50
1.5
0.5
Junction temperature, T J (°C)
25
2.0
Page 7 of 8
200
13N60 Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
1
PIN
2
16.13 (0.635)
15.87 (0.625)
3
4.06 (0.160)
3.56 (0.140)
15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
14.22 (0.560)
13.46 (0.530)
2.67 (0.105)
2.41 (0.095)
0.90 (0.035)
0.70 (0.028)
2.65 (0.104)
2.45 (0.096)
D (Drain)
0.56 (0.022)
0.36 (0.014)
5.20 (0.205)
4.95 (0.195)
G
(Gate)
S (Source)
All dimensions in millimeters(inches)
TO-220F
10.6
10.4
3.4
3.1
2.8
2.6
3.7
3.2 7.1
6.7
16.0
15.8
16.4
15.4
2
1
3
10°
3.3
3.1
13.7
13.5
2.54
TYP
0.9
0.7
0.48
0.44
2.54
TYP
2.85
2.65
4.8
4.6
D (Drain)
G
(Gate)
S (Source)
All dimensions in millimeters
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Page 8 of 8