IRF3710 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products N-Channel Power MOSFET (57A, 100Volts) DESCRIPTION The Nell IRF3710 are N-channel enhancement mode silicon gate power field effect transistors. They are designed, tested and guaranteed to withstand level of energy in breakdown avalanche made of operation. D They are designed as an extremely efficient and reliable device for use in a wide variety of applications such as switching regulators, convertors, motor drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These transistors can be operated directly from integrated circuits. G D TO-220AB (IRF3710A) S D (Drain) FEATURES RDS(ON) = 0.023Ω @ VGS = 10V G (Gate) Ultra low gate charge(130nC max.) Low reverse transfer capacitance (C RSS = 72pF typical) S (Source) Fast switching capability 100% avalanche energy specified PRODUCT SUMMARY Improved dv/dt capability 175°C operation temperature ID (A) 57 VDSS (V) 100 RDS(ON) (Ω) 0.023 @ V GS = 10V QG(nC) max. 130 ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER VALUE VDSS Drain to Source voltage(Note 1) T J =25°C to 150°C 100 V DGR Drain to Gate voltage R GS =20KΩ V GS Gate to Source voltage 100 ±20 ID Continuous Drain Current I DM Pulsed Drain current (Note 1) I AR Repetitive avalanche current (Note 1) V GS =10V, T C =25°C 57 V GS =10V, T C =100°C 40 230 UNIT V A 28 E AR Repetitive avalanche energy(Note 1) I AR =28A, R GS =50Ω, V GS =10V 20 mJ E AS Single pulse avalanche energy (Note 2) I AS =28A, L=0.7mH 280 mJ 5.8 V /ns T C =25°C 200 W 1.3 W /°C dv/dt PD TJ T STG TL Peak diode recovery dv/dt(Note 3) Total power dissipation Derating factor above 25 ° C Operation junction temperature -55 to 175 Storage temperature -55 to 175 Maximum soldering temperature, for 10 seconds Mounting torque, #6-32 or M3 screw 300 10 (1.1) Note: 1. Repetitive rating: pulse width limited by junction temperature. 2 . V DD =50V,L=0.7mH,I AS =28A,R G =25Ω, T J =175˚C 3 . I SD ≤ 28A, di/dt ≤ 380 A/µs, V DD ≤ V (BR)DSS , T J ≤ 175°C. www.nellsemi.com 1.6mm from case Page 1 of 7 ºC lbf . in (N . m) RoHS RoHS IRF3710 Series SEMICONDUCTOR Nell High Power Products THERMAL RESISTANCE SYMBOL PARAMETER Rth(j-c) Thermal resistance, junction to case Rth(c-s) Thermal resistance, case to heatsink Rth(j-a) Thermal resistance, junction to ambient Min. Typ. UNIT Max. 0.75 ºC/W 0.5 62 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL TEST CONDITIONS PARAMETER Min. Typ. Max. UNIT STATIC V(BR)DSS ▲V (BR)DSS/▲T J I DSS I GSS Drain to source breakdown voltage Breakdown voltage temperature coefficient Drain to source leakage current 100 V GS = 0V, I D = 250µA I D = 1mA, referenced to 25°C 25 V DS =80V, V GS =0V T C =150°C 250 V GS = 20V, V DS = 0V V GS = - 20V, V DS = 0V V GS = 10V, l D = 28A (Note 1) Static drain to source on-state resistance Gate threshold voltage Forward transconductance V/ºC T C = 25°C Gate to source reverse leakage current V GS(TH) g fS 0.13 V DS =100V, V GS =0V Gate to source forward leakage current R DS(ON) V V GS =V DS , I D =250μA V DS =25V, I D =28A μA 100 -100 nA 0.023 Ω 4 V S 2 32 DYNAMIC C ISS Input capacitance C OSS Output capacitance C RSS Reverse transfer capacitance t d(ON) Turn-on delay time tr t d(OFF) tf Rise time Turn-off delay time 3130 V DS = 25V, V GS = 0V, f =1MHz 410 pF 72 12 V DD = 50V, I D = 28A V GS = 10V, R G =2.5Ω (Note 1) 58 ns 45 47 Fall time LD Internal drain inductance LS Internal source inductance QG Total gate charge Q GS Gate to source charge Q GD Gate to drain charge (Miller charge) 4.5 Between lead, 6mm from package and center of die nH 7.5 130 26 V DS = 80V, V GS = 10V, I D = 28A nC 43 SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified) SYMBOL VSD I s (I SD ) PARAMETER Diode forward voltage Continuous source to drain current TEST CONDITIONS Min. Typ. I SD = 28A, V GS = 0V Integral reverse P-N junction diode in the MOSFET Max. UNIT 1.2 V 57 D (Drain) I SM 230 Pulsed source current A G (Gate) S (Source) t rr Reverse recovery time Q rr Reverse recovery charge t ON Forward turn-on time I SD = 28A, V GS = 0V, dI F /dt = 100A/µs 220 ns 670 1010 nC Intrinsic turn-on time is negligible (turn-on is domonated by LS+LD) Note: 1. Pulse test: Pulse width ≤ 400μs, duty cycle ≤ 2% . www.nellsemi.com 140 Page 2 of 7 IRF3710 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products ORDERING INFORMATION SCHEME IRF 3710 A MOSFET series N-Channel, IR series Current & Voltage rating, lD & VDS 57A / 100V Package type A = TO-220AB Fig.1 Typical output characteristics, T C =25°C Fig.2 Typical output characteristics, T C =150°C 1000 V GS Top: 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0V Bottorm: 3.5V 100 Drain Current, l D (Amps) Drain Current,l D (Amps) 1000 10 3.5V 1 100 V GS Top: 16V 10V 7.0V 6.0V 5.0V 4.5V 4.0V Bottorm: 3.5V 10 3.5V 1 20µs pulse width T C =25°C 20µs pulse width T J =175°C 0.1 0.1 10 1 0.1 0.1 100 Drain-to-Source voltage , V DS (volts) 10 T J =25 °C 1 V DS =15V 20µs pulse width 0.10 5 6 7 8 9 Drain-to-Source on resistance, R DS(on) (Normalized) Drain Current, l D (Amps) T J =175°C 4 Gate-to-Source voltage , V GS (volts) www.nellsemi.com 100 Fig.4 Normalized On-Resistance vs. Temperature 1000 3 10 Drain-to-Source voltage , V DS (volts) Fig.3 Typical transfer characteristics 100 1 3 l D =57A 2.5 2 1.5 1 0.5 0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180 Junction Temperature,T J (°C) Page 3 of 7 RoHS RoHS IRF3710 Series SEMICONDUCTOR Nell High Power Products Fig.6 Typical source-drain diode forward voltage Fig.5 Typical capacitance vs. Drain-to-Source voltage 20 V GS = 0V, f =1MHZ C iss = C gs +C gd ( C ds = shorted ) C rss = C gd C oss = C ds +C gd 10000 Reverse drain current,I SD (A) Capacitance, (pF) 100000 Ciss 1000 Coss 100 Crss 16 12 8 T J =175°C T J =25°C 4 V GS = 0V 0 0 0.0 100 10 1 Drain-to-Source voltage , V DS (volts) 2 1.5 1 Source-to-drain voltage, V SD (volts) Fig.8 Maximum safe operating area Fig.7 Typical gate charge vs. gate-to-source voltage 1000 12 Operation in This Area is Limited by R DS(ON) l D = 28A 10 V DS = 80V V DS = 50V V DS = 20V Drain current , l D (Amps) Gate-to-source voltage , V GS (volts) 0.5 7 5 100 100µs 10 1ms 1 Note: 1. T C = 25°C 2. T J = 175°C 3. Single Pulse 2 10ms 0.1 0 0 20 40 60 80 10 1 100 Drain-to-Source voltage, V DS (volts) Total gate charge , Q G (nC) Fig.9 Maximum drain current vs. Case temperature Drain Current , l D (Amps) 60 50 40 30 20 10 0 25 50 75 100 125 150 Case temperature, T C ( ° C) www.nellsemi.com 100 Page 4 of 7 175 1000 IRF3710 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.10 Maximum effective transient thermal impedance, Junction-to-Case Thermal response (RthJc) 1 D = 0.5 0.2 0.1 0.1 Single pulse (Thermal response) 0.05 0.02 0.01 PDM t1 Notes: 1. Duty factor, D = t1/ t2 2. Peak TJ = PDM * Rth(j-c) +TC 0.01 0.00001 0.001 0.0001 t2 1 0.1 0.01 Rectangular Pulse Duration , t 1 (seconds) Fig.11a. Switching time test circuit V DS Fig.11b. Switching time waveforms RD V DS 90% V GS RG D.U.T. + - V DD 10V V GS Pulse width ≤ 1µs Duty Factor ≤ 0.1% 10% t d(ON) t d(OFF) tR Fig.12a. Unclamped lnductive test circuit tF Fig.12b. Unclamped lnductive waveforms 15V BV DSS L V DS l AS DRIVER l D(t) V DS(t) RG D.U.T. l AS + V - DD V DD A 20V tP Time 0.01Ω tp Vary t p to obtain required I AS www.nellsemi.com Page 5 of 7 RoHS RoHS IRF3710 Series SEMICONDUCTOR Nell High Power Products Fig.12c. Maximum avalanche energy vs. Drain current Single pulse energy, E AS (mJ) 550 lD 110A 20A BOTTOM 28A TOP 440 330 220 110 0 50 25 75 100 125 150 175 Starting Junction temperature, T J (°C) Fig.13a. Basic gate charge waveform Fig.13b. Gate charge test circuit Current Regulator Same Type as D.U.T. V GS 50KΩ QG 0.2µF 12V 10V 0.3µF + Q GD Q GS - D.U.T. V DS V GS 3mA RG Charge RD Current Sampling Resistors Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET D.U.T. Driver Gate Drive + Circuit Layout Considerations • Low Stray lnductance • Ground Plane • Low Leakage lnductance Current Transformer P.W. D= Period P.W. Period VGS=10V - * D.U.T. I SD Waveform + - - RG Reverse Recovery Current + Body Diode Forward Current di/dt D.U.T. VDS Waveform • • • • dv/dt controlled by R G Driver same type as D.U.T. l SD controlled by Duty Factor " D " D.U.T. -Device Under Test Re-Applied Voltage + - V DD Diode Recovery dv/dt Body Diode VDD Forward Drop Inductor Curent Ripple ≤ 5% ISD *V GS = 5V for Logic Level Devices and 3V for drive devices www.nellsemi.com Page 6 of 7 IRF3710 Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 16.13 (0.635) 15.87 (0.625) 3 4.06 (0.160) 3.56 (0.140) 15.32 (0.603) 14.55 (0.573) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 14.22 (0.560) 13.46 (0.530) 0.90 (0.035) 0.70 (0.028) 5.20 (0.205) 4.95 (0.195) D (Drain) 0.56 (0.022) 0.36 (0.014) G (Gate) S (Source) All dimensions in millimeters(inches) www.nellsemi.com Page 7 of 7