D304X SEMICONDUCTOR RoHS RoHS Nell High Power Products High Voltage Fast-Switchong NPN Power Transistor 12A/400V/100W C FEATURES High-speed switching High breakdown voltage High current capability High reliability B APPLICATIONS C (D304X) E Electronic ballasts, energy-saving light High frequency power transformer High frequency switching power supply Common power amplifier C (2) B (1) NPN E (3) ABSOLUTE MAXIMUM RATINGS (TC = 25°C) PARAMETER SYMBOL VALUE VCBO Collector to base voltage (I E =0) 450 V CEO Collector to emitter voltage (I B =0) 400 V CES Collector to emitter voltage (V BE =0) 450 V EBO Emitter to base voltage UNIT V IC I CM* IB 9 Collector current 12 Peak Collector current 24 A 6 Base current I BM* Peak Base current PC Collector power dissipation Tj Junction temperature 150 T stg Storage temperature -55 to 150 12 T C = 25°C 100 W ºC *Pulse test: pulse width = 5.0ms, duty cycle < 10% THERMAL CHARACTERISTICS (TC = 25°C) SYMBOL Rth(j-c) www.nellsemi.com PARAMETER Thermal resistance, junction to case Page 1 of 4 VALUE UNIT 1.25 ºC/W D304X SEMICONDUCTOR RoHS RoHS Nell High Power Products ELECTRICAL CHARACTERISTICS (TC = 25°C) SYMBOL ICBO CONDITIONS PARAMETER Collector cutoff current ICEO I EBO MIN V CBO = 450V, l E = 0 100 V CEO = 400V, l B = 0 50 Emitter cutoff current V EBO = 9V, l C = 0 V (BR)CEO Collector to emitter breakdown voltage l C = 10mA, I B = 0 V CEO(SUS) * Collector to emitter sustaining voltage l C = 1A, L = 50mH V (BR)CBO Collector to base breakdown voltage l C = 1mA, I E = 0 450 V (BR)EBO Emitter to base breakdown voltage l E = 1mA, I C = 0 9 V CE = 5V, l C = 5A 8 V CE = 5V, l C = 8A 5 h FE V CE(sat) V BE(sat) t on t stg Base to emitter saturation voltage fT Trasistion frequency 40 l C = 5A, l B = 1A 0.8 2.2 l C = 5A, l B = 1A 1.6 V 0.7 3.0 µS 0.7 V CE = 10V, I C = 0.5A f = 1.0MHz 2.5 *V CEO(sus) Test circuit 50/60Hz mercury relay X L 50mH Y 120W 6V 1W 15V G www.nellsemi.com V l C = 8A, l B = 1.6A V CC = 24V, l C = 5A l B1 = -I B2 = 1A Storage time Fall time µA 1.0 Turn-on time tf UNIT 400 Forward current transfer ratio (DC current gain) Collector to emitter saturation voltage MAX Page 2 of 4 MHz D304X SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.2 Base - Emitter saturation voltage Fig.1 DC Current gain 100 Base-Emitter Saturation voltage V BE (Sat) (V) DC current gain, h FE T J = 100°C T J = 25°C 10 V CE = 5V 1 1.4 I C /I B = 5 1.2 T J = 25°C 1.0 0.8 0.6 T J = 100°C 0.1 0.01 0.4 1 0.1 Collector current , I C (A) Fig.4 Power derating Power derating factor, P C (%) Collector-Emitter saturation voltage V CE (sat) (V) 10 Collector Current, l C (A) Fig.3 Collector-Emitter saturation voltage I C /I B = 5 1 1 0.1 10 T J = 100°C 0.1 T J = 25°C 100 80 60 40 20 0.01 0 1 0 10 1 Collector current, I C (A) 50 25 Collector Current, l C (A) 100 10 DC 0.1 T C = 25°C Single pulse 0.01 1 10 100 Collector-Emitter Voltage, V CE (V) www.nellsemi.com Page 3 of 4 100 125 Case temperature, T C (°C) Fig.5 Safe operating area (SOA) 1 75 500 150 D304X SEMICONDUCTOR RoHS RoHS Nell High Power Products Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) C B 1 2 E 3 16.13 (0.635) 15.87 (0.625) 4.06 (0.160) 3.56 (0.140) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) www.nellsemi.com 15.32 (0.603) 14.55 (0.573) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 14.22 (0.560) 13.46 (0.530) 0.90 (0.035) 0.70 (0.028) 5.20 (0.205) 4.95 (0.195) Page 4 of 4 0.56 (0.022) 0.36 (0.014)