D304X - nell

D304X
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
High Voltage Fast-Switchong NPN Power Transistor
12A/400V/100W
C
FEATURES
High-speed switching
High breakdown voltage
High current capability
High reliability
B
APPLICATIONS
C
(D304X)
E
Electronic ballasts, energy-saving light
High frequency power transformer
High frequency switching power supply
Common power amplifier
C (2)
B
(1)
NPN
E (3)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C)
PARAMETER
SYMBOL
VALUE
VCBO
Collector to base voltage (I E =0)
450
V CEO
Collector to emitter voltage (I B =0)
400
V CES
Collector to emitter voltage (V BE =0)
450
V EBO
Emitter to base voltage
UNIT
V
IC
I CM*
IB
9
Collector current
12
Peak Collector current
24
A
6
Base current
I BM*
Peak Base current
PC
Collector power dissipation
Tj
Junction temperature
150
T stg
Storage temperature
-55 to 150
12
T C = 25°C
100
W
ºC
*Pulse test: pulse width = 5.0ms, duty cycle < 10%
THERMAL CHARACTERISTICS (TC = 25°C)
SYMBOL
Rth(j-c)
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PARAMETER
Thermal resistance, junction to case
Page 1 of 4
VALUE
UNIT
1.25
ºC/W
D304X
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
ELECTRICAL CHARACTERISTICS (TC = 25°C)
SYMBOL
ICBO
CONDITIONS
PARAMETER
Collector cutoff current
ICEO
I EBO
MIN
V CBO = 450V, l E = 0
100
V CEO = 400V, l B = 0
50
Emitter cutoff current
V EBO = 9V, l C = 0
V (BR)CEO
Collector to emitter breakdown voltage
l C = 10mA, I B = 0
V CEO(SUS) *
Collector to emitter sustaining voltage
l C = 1A, L = 50mH
V (BR)CBO
Collector to base breakdown voltage
l C = 1mA, I E = 0
450
V (BR)EBO
Emitter to base breakdown voltage
l E = 1mA, I C = 0
9
V CE = 5V, l C = 5A
8
V CE = 5V, l C = 8A
5
h FE
V CE(sat)
V BE(sat)
t on
t stg
Base to emitter saturation voltage
fT
Trasistion frequency
40
l C = 5A, l B = 1A
0.8
2.2
l C = 5A, l B = 1A
1.6
V
0.7
3.0
µS
0.7
V CE = 10V, I C = 0.5A
f = 1.0MHz
2.5
*V CEO(sus) Test circuit
50/60Hz
mercury relay
X
L 50mH
Y
120W
6V
1W
15V
G
www.nellsemi.com
V
l C = 8A, l B = 1.6A
V CC = 24V, l C = 5A
l B1 = -I B2 = 1A
Storage time
Fall time
µA
1.0
Turn-on time
tf
UNIT
400
Forward current transfer ratio (DC current gain)
Collector to emitter saturation voltage
MAX
Page 2 of 4
MHz
D304X
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.2 Base - Emitter saturation voltage
Fig.1 DC Current gain
100
Base-Emitter Saturation voltage
V BE (Sat) (V)
DC current gain, h FE
T J = 100°C
T J = 25°C
10
V CE = 5V
1
1.4
I C /I B = 5
1.2
T J = 25°C
1.0
0.8
0.6
T J = 100°C
0.1
0.01
0.4
1
0.1
Collector current , I C (A)
Fig.4 Power derating
Power derating factor, P C (%)
Collector-Emitter saturation voltage
V CE (sat) (V)
10
Collector Current, l C (A)
Fig.3 Collector-Emitter saturation voltage
I C /I B = 5
1
1
0.1
10
T J = 100°C
0.1
T J = 25°C
100
80
60
40
20
0.01
0
1
0
10
1
Collector current, I C (A)
50
25
Collector Current, l C (A)
100
10
DC
0.1
T C = 25°C
Single pulse
0.01
1
10
100
Collector-Emitter Voltage, V CE (V)
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Page 3 of 4
100
125
Case temperature, T C (°C)
Fig.5 Safe operating area (SOA)
1
75
500
150
D304X
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Case Style
TO-220AB
10.54 (0.415) MAX.
9.40 (0.370)
9.14 (0.360)
4.70 (0.185)
4.44 (0.1754)
3.91 (0.154)
3.74 (0.148)
1.39 (0.055)
1.14 (0.045)
2.87 (0.113)
2.62 (0.103)
3.68 (0.145)
3.43 (0.135)
C
B
1
2
E
3
16.13 (0.635)
15.87 (0.625)
4.06 (0.160)
3.56 (0.140)
2.79 (0.110)
2.54 (0.100)
1.45 (0.057)
1.14 (0.045)
2.67 (0.105)
2.41 (0.095)
2.65 (0.104)
2.45 (0.096)
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15.32 (0.603)
14.55 (0.573)
8.89 (0.350)
8.38 (0.330)
29.16 (1.148)
28.40 (1.118)
14.22 (0.560)
13.46 (0.530)
0.90 (0.035)
0.70 (0.028)
5.20 (0.205)
4.95 (0.195)
Page 4 of 4
0.56 (0.022)
0.36 (0.014)