TIP35(NPN). TIP36(PNP) Series

TIP35 (NPN) Series
TIP36 (PNP) Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
1.8
Φ3.2 ± 0,1
Complementary NPN-PNP transistors
Low collector-emitter saturation voltage
Satisfactory linearity of foward current
transfer ratio h FE
2
4.0 max
20.0 min
TO-3P(B)
FEATURES
4.8±0.2
2.0±0.1
4.0
19.9±0.3
2.0
15.6±0.4
9.6
5.0 ±0 . 2
Complementary Silicon Power Transistor
25A/40~100V/125W
3
5.45±0.1
B
C
E
1
2
3
+0.2
1.05 -0.1
+0.2
0.65 -0.1
5.45±0.1
1.4
TO-3P package which can be installed
to the heat sink with one screw
Collector - Emitter Saturation Voltage:
V CE(sat) = 1.8V dc (MAX.) @ I C = 15A
Collector - Emitter Saturation Voltage:
V CEO(sus) = 40V dc (Min.) - TIP35,TIP36
= 60V dc (Min.) - TIP35A,TIP36A
= 80V dc (Min.) - TIP35B, TIP36B
= 100V dc (Min.) - TIP35C, TIP36C
DC Current Gain h FE = 25 (Min.) @ I c = 1.5A
High Current Gain - Bandwidth product
f T = 3.0 MHz (Min.) @ I c =1.0A
All dimensions in millimeters
C
C
B
B
APPLICATIONS
E
Audio amplifier
General purpose switching and amplifier
E
TIP35(NPN)
TIP36(PNP)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C)
VALUE
SYMBOL
PARAMETER
TIP35
TIP36
TIP35A
TIP36A
TIP35B TIP35C
TIP36B TIP36C
VCBO
Collector to base voltage (I E = 0)
40
60
80
100
V CEO
Collector to emitter voltage (I B = 0)
40
60
80
100
V EBO
IC
I CM
Collector current
25
Collector peak current (t p < 0.3mS)
40
Base current
PC
Collector power dissipation
(Derate above 25°C)
V
5
Emitter to base voltage (I C = 0)
IB
UNIT
A
5
@T C = 25°C
125 (1.0)
@T A = 25°C
3.5 (0.028)
Tj
Junction temperature
150
T stg
Storage temperature
-65 to 150
W(W/°C)
ºC
E
Unclamped inductive load energy (Note 1)
Note: 1. This rating is based on the capability of the transistor to operate safely is a circuit of:
L = 20mH, I B(on) = 0.4A, R BE = 100Ω, V BE(off) = 0, R S = 0.1Ω, V CC = 20V
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Page 1 of 3
90
mJ
TIP35 (NPN) Series
TIP36 (PNP) Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
THERMAL CHARACTERISTICS (TC = 25°C)
PARAMETER
SYMBOL
Rth(j-c)
Maximum thermal resistance, junction to case
Rth(j-a)
Maximum thermal resistance, junction to ambient
VALUE
UNIT
1.0
ºC/W
36.0
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
CONDITIONS
PARAMETER
SYMBOL
MIN
MAX
Off Characteristics
V CEO(SUS)
ICEO
IEBO
I CES
Collector to emitter sustaining voltage (Note 1)
l C = 30mA, I B =0
Collector cutoff current
40
60
TIP35B,TIP36B
80
TIP35C,TIP36C
100
V CE = 30V, I B = 0
TIP35,TIP36
TIP35A,TIP36A
V CE = 60V, l B = 0
TIP35B,TIP36B
TIP35C,TIP36C
Collector cutoff current
Emitter cutoff current
TIP35,TIP36
TIP35A,TIP36A
V
1.0
mA
V EB = 5V, I C = 0
1.0
V CE = 40V, V EB = 0
TIP35,TIP36
0.7
V CE = 60V, V EB = 0
TIP35A,TIP36A
0.7
V CE = 80V, V EB = 0
TIP35B,TIP36B
0.7
V CE = 100V, V EB = 0 TIP35C,TIP36C
0.7
mA
On Characteristics
h FE
V CE(sat)
Forward current transfer ratio (DC current gain)
V CE = 4V , I C = 1.5A
25
V CE = 4V, I C = 15A
15
l C = 15A, l B = 1.5A
Collector to emitter saturation voltage (Note1)
V BE(sat)
Base to emitter saturation voltage (Note1)
V BE(on)
Base to emitter voltage (Note1)
75
1.8
l C = 25A, l B = 5A
4.0
l C = 15A, l B = 1.5A
2.5
l C = 15A, V CE = 4V
2.0
l C = 25A, V CE = 4V
4.0
V
Dynamic Characteristics
fT
Current gain - Bandwidth product (note 2)
l C = 1.0A, V CE = 10V, f test = 1MHz
3.0
h fe
Small signal current gain
l C = 1.0A, V CE = 10V, f = 1KHz
20
Note 1. Pulsed : Pulse duration ≤ 300 µS, duty cycle ≤ 2 . 0 %.
Note 2. f T = |h fe | • f TEST
Note 3. For PNP type voltage and current are negative.
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Page 2 of 3
MHZ
TIP35 (NPN) Series
TIP36 (PNP) Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.1 DC current gain for
Fig.2 Turn-off time
10
V CE = 4V
T J = 25°C
200
PNP
NPN
5.0
ts
2.0
100
Time, t (µS)
DC current gain, h FE
500
50
20
ts
1.0
0.5
tf
PNP
NPN
10
tf
0.2
5
0.1
0.2
0.5
1.0
2.0
10
5.0
0.1
0.3
50
20
0.5
1.0
Collector current, I C (A)
5.0
2.0
10
20 30
Collector Current, l C (A)
Fig.4 Reverse biase safe operating area
Fig.3 Turn-on time
40
3.0
Collector current (Amp.), I C
I C /I B = 10
V CC = 30V
T J = 25°C
1.0
V BE(OFF) = 2V
0.5
Time, t (µS)
I C /I B = 10
I B1 = I b2
V CC = 30V
T J = 25°C
tr
0.2
0.1
PNP
NPN
td
0.05
0.02
0.3
0.5
5.0
2.0
1.0
10
30
TIP35C
TIP36C
20
TIP35C
TIP36C
TIP35A
TIP36A
10
TIP35
TIP36
0
20 30
10
20
30
40
50
60
70
80
Collector current, I C (A)
Collector emitter , V CE (V)
Fig.5 Active region safe operating area
Fig.6 Power Derating
100
90 100
150
50
Power dissipation , P D (W)
Collector-current ,I C (A)
300µs
20
1ms
10
5.0ms
DC
5.0
Bonding Wire Limit
Second Breakdown Limit
Thermally Limit
T C =25°C (Single Pulse)
2.0
1.0
TIP35.TIP36
0.5
TIP35A,TIP36A
TIP35B,TIP36B
TIP35C,TIP36C
0.2
0.1
1
2
5
10
20
100
75
50
25
0
50
100
0
Collector-emitter voltage (volts), V CE
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125
25
50
75
100
Temperature, T C (°C)
Page 3 of 3
125
150