TIP31 (NPN) Series TIP32 (PNP) Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Complementary Silicon Power Transistor 3A/40~100V/40W FEATURES C Complementary NPN-PNP transistors Low collector-emitter saturation voltage Satisfactory linearity of foward current transfer ratio h FE TO-220AB package which can be installed to the heat sink with one screw B Collector - Emitter Saturation Voltage: V CE(sat) = 1.2V dc (MAX.) @ I C = 3A Collector - Emitter Saturation Voltage: V CEO(sus) = 40V dc (Min.) - TIP31,TIP32 = 60V dc (Min.) - TIP31A,TIP32A = 80V dc (Min.) - TIP31B, TIP32B = 100V dc (Min.) - TIP31C, TIP32C DC Current Gain h FE = 25 (Min.) @ I c = 1.0A High Current Gain - Bandwidth product f T = 3.0 MHz (Min.) @ I c =0.5A C E TO-220AB C C B B APPLICATIONS E Audio amplifier General purpose switching and amplifier E TIP31(NPN) TIP32(PNP) ABSOLUTE MAXIMUM RATINGS (TC = 25°C) VALUE SYMBOL PARAMETER TIP31 TIP32 TIP31A TIP32A TIP31B TIP31C TIP32B TIP32C VCBO Collector to base voltage (I E = 0) 40 60 80 100 V CEO Collector to emitter voltage (I B = 0) 40 60 80 100 V EBO Emitter to base voltage (I C = 0) 5 Collector current 3 Collector peak current (t p < 5mS) 5 IB Base current 1 PC Collector power dissipation (Derate above 25°C) IC I CM @T C = 25°C 40 (0.32) @T A = 25°C 2.0 (0.016) Tj Junction temperature 150 T stg Storage temperature -65 to 150 UNIT V A W(W/°C) ºC E Unclamped inductive load energy (Note 1) Note: 1. This rating is based on the capability of the transistor to operate safely is a circuit of: I C = 1.8A, L = 20mH, R BE = 100Ω, P.R.F = 10Hz, V CC = 20V www.nellsemi.com Page 1 of 5 32 mJ TIP31 (NPN) Series TIP32 (PNP) Series SEMICONDUCTOR RoHS RoHS Nell High Power Products THERMAL CHARACTERISTICS (TC = 25°C) PARAMETER SYMBOL Rth(j-c) Maximum thermal resistance, junction to case Rth(j-a) Maximum thermal resistance, junction to ambient VALUE UNIT 3.1 ºC/W 62.5 ºC/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified) CONDITIONS PARAMETER SYMBOL MIN MAX Off Characteristics V CEO(SUS) ICEO Collector to emitter sustaining voltage (Note 1) l C = 30mA, I B =0 TIP31A,TIP32A 60 TIP31B,TIP32B 80 TIP31C,TIP32C 100 V CE = 30V, I B = 0 V CE = 60V, l B = 0 TIP31B,TIP32B TIP31C,TIP32C Collector cutoff current V 0.3 mA V EB = 5V, I C = 0 Emitter cutoff current I CES 40 TIP31,TIP32 TIP31A,TIP32A Collector cutoff current IEBO TIP31,TIP32 1.0 V CE = 40V, V EB = 0 TIP31,TIP32 200 V CE = 60V, V EB = 0 TIP31A,TIP32A 200 V CE = 80V, V EB = 0 TIP31B,TIP32B 200 V CE = 100V, V EB = 0 TIP31C,TIP32C 200 µA On Characteristics Forward current transfer ratio (DC current gain) h FE V CE = 4V , I C = 1.0A 25 V CE = 4V, I C = 3A 10 75 V CE(sat) Collector to emitter saturation voltage (Note1) l C = 3A, l B = 0.375A 1.2 V BE(on) Base to emitter voltage (Note1) l C = 3A, V CE = 4V 1.8 V Dynamic Characteristics fT Current gain - Bandwidth product (note 2) l C = 0.5A, V CE = 10V, f test = 1MHz 3.0 h fe Small signal current gain l C = 0.5A, V CE = 10V, f = 1KHz 20 MHZ Note 1. Pulsed : Pulse duration ≤ 300 µS, duty cycle ≤ 2 . 0 %. Note 2. f T = |h fe | • f TEST Note 3. For PNP type voltage and current are negative. Fig 2. Switching Time Equivalent Circuit Fig.1 Power derating Power dissipation, P C (W) TC TA 40 4.0 TURNON PULSE APPROX +11 V 30 3.0 RC VEB(off) t3 APPROX +11 V TA 0 R B t1 20 2.0 10 1.0 t2 0 20 40 60 80 100 Temperature (˚C) www.nellsemi.com 120 140 160 Cjd << Ceb t1 ≤ 7.0 ns 100 < t2 < 500 µs t3 < 15 ns Vin 0 SCOPE Vin Vin 0 TC VCC TURNOFF PULSE -4.0 V DUTY CYCLE ≈ 2.0% APPROX 9.0 V RB and R C VARIED TO OBTAIN DESIRED CURRENT LEVELS. Page 2 of 5 TIP31 (NPN) Series TIP32 (PNP) Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.3 Turn-on time Fig.4 Turn-off time 3.0 2.0 1.0 0.7 t S’ 1.0 t r @ V CC = 30V 0.5 0.7 0.5 0.3 Time, t (µS) Time, t (µS) 2.0 I C /I B = 10 T J = 25°C t r @ V CC = 10V 0.1 0.07 t f @ V CC = 30V t f @ V CC = 10V 0.1 t d @ V EB(off) = 2.0V 0.05 0.3 0.2 I B1 = I B2 I C / I B = 10 t S ’ = t S - 1/8t f T J = 25°C 0.07 0.03 0.02 0.03 0.05 0.05 0.03 0.1 1.0 0.3 0.5 3.0 0.03 0.05 0.07 0.1 Collector Current, l C (A) 0.2 0.3 0.5 0.7 1.0 2.0 3.0 Collector emitter , I C (A) Fig.5 Active region safe operating area 10 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Sa fe operating area curves indicate l C -V CE limits of the tra nsistor that must be observe d for re liable op er at ion ; i.e. , the tran sistor mus t no t be sub jec ted to The data of fig.5 is based on T J(pk) = 150°C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to10% provided T J(pk) ≤ 150°C T J(pk) may be calulated form the data in Figure 13. At high case temperatures, thermal limitations will reduce the power that can be handled to valuesless than the limitations by second breakdown. Collector current ,I C (A) 5.0 100µs 5.0ms 2.0 1.0ms 1.0 0.5 Second Breakdown Limited @ T J ≤ 150 ˚ C Thermal limit @ T J = 25˚C (Single pulse) Bonding wire limit 0.2 TIP31A,TIP32A TIP31B,TIP32B TIP31C,TIP32C CURVES APPLY BELLOW RATED V CEO 0.1 5.0 50 20 10 100 Collector-emitter voltage , V CE (V) Fig.6 Capacitance Fig.7 Dc current gain 300 500 Capacitance (pF) Dc current gain, h FE T J = +25°C 200 100 C eb 70 50 C cb 0.2 0.3 0.5 1.0 2 3 5 7 10 100 25°C 70 V CE = 2.0V -55°C 50 30 10 20 30 40 Reverse voltage, V R (V) www.nellsemi.com T J = 150°C 7.0 5.0 0.03 0.05 30 0.1 300 0.1 0.3 1.0 Collector current, I C (A) Page 3 of 5 3.0 TIP31 (NPN) Series TIP32 (PNP) Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Fig.9 “On” voltages 2.0 1.4 T J = 25°C 1.2 T J = 25°C 1.6 1.0 1.2 I C = 0.3A 1. 0A Time, t (µS) Collector-emitter voltage, V CE (V) Fig.8 Collector saturation region 3. 0A 0.8 0.8 V BE(sat) @ I C /I B = 10 V BE @ V CE = 2.0V 0.6 0.4 0.4 V CE(sat) @ I C /I B = 10 0.2 0 0 1.0 5.0 10 2.0 20 50 100 200 500 1000 0.003 0.005 0.01 0.02 0.05 Base current, I B (mA) 10 Collector current , I C (μA) Temperature coefficients, θV (mV/˚C) APPLIES FOR I CE /I B ≤ h FE /2 T J = -65˚C to +150˚C *θVC FOR V CE(sat) 0 -0.5 -1.0 -1.5 θVB FOR V BE 10 10 10 10 V CE = 30V 2 T J = 150°C 1 0 100°C -1 Reverse -2.5 10 0.05 0.1 0.2 0.3 0.5 1.0 25°C I CES -3 -0.4 -0.3 -0.2 -0.1 2.0 3.0 Collector Current, l C (A) External base-emitter resistance, R BE (Ω) 10 10 10 10 10 7 I C = 10×I CES 6 5 V CE = 30V I C ≈ I CES 4 I C = 2×I CES 3 (Typical I CES values obtained from flgure 11) 2 20 40 60 80 100 120 140 Junction temperature, T J (˚C) www.nellsemi.com 0 +0.1 +0.2 +0.3 +0.4 +0.5 +0.6 Bese-emitter voltage, V BE (V) Fig.12 Effects of base-emitter resistance 10 Forward -2 -2.0 0.003 0.005 0.01 0.02 2.0 3.0 3 10 +1.0 +0.5 1.0 Fig.11 Collector cut-off region +2.5 +1.5 0.2 0.3 0.5 Collector Current, l C (A) Fig.10 Temperature coeffcients +2.0 0.1 Page 4 of 5 160 TIP31 (NPN) Series TIP32 (PNP) Series SEMICONDUCTOR RoHS RoHS Nell High Power Products Transient thermal resistance, r(t) (normalized) Fig.13 Thermal response 0.1 0.7 D = 0.5 0.5 0.3 0.2 0.2 0.1 1.0 0.05 0.07 Zth(j-c) = r(t) Rth(j-c) 0.05 0.03 0.02 0.01 P DK Rth(j-c) (t)=3.125°C/W Max. D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(PK) - TC = P(PK) Zth(j-c)(t) 0.02 Single pulse t1 t2 DUTY CYCLE, D = t1/t2 0.01 0.01 0.02 0.05 1.0 1.0 0.5 0.2 5.0 2.0 10 20 50 100 200 Time, t(mS) Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 16.13 (0.635) 15.87 (0.625) 3 4.06 (0.160) 3.56 (0.140) 15.32 (0.603) 14.55 (0.573) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) www.nellsemi.com 14.22 (0.560) 13.46 (0.530) 0.90 (0.035) 0.70 (0.028) 5.20 (0.205) 4.95 (0.195) Page 5 of 5 0.56 (0.022) 0.36 (0.014) 500 1000