NELLSEMI NKH160A

RoHS
RoHS
NKT160A/NKH160A Series
SEMICONDUCTOR
Nell High Power Products
Thyristor/Diode and Thyristor/Thyristor, 160A
(New INT-A-PAK Power Modules)
New INT-A -PAK
23
23
2.8x0.8+0.1
12+1
-
34+2
-
24
2−Ø6.5
15+1
FEATURES
80+1
• High voltage
94+1
3-M6 SCREWS
• Electrically isolated by DBC ceramic (AI 2O3)
• High surge capability
29+1
-
36+2
-
• Industrial standard package
9
7+0.5
• 3500 V RMS isolating voltage
• Glass passivated chips
0.8
• Modules uses high voltage power thyristor/diodes in two
basic configurations
All dimensions in millimeters
• Simple mounting
• UL approved file E320098
• Compliant to RoHS
• Designed and qualified for multiple level
APPLICATIONS
• DC motor control and drives
• Battery charges
NKH
+
+
-
~
• Welders
NKT
-
~
• Power converters
• Lighting control
~
+
-
• Heat and temperature control
K2 G2
K1 G1
~
-
+
K1G1
PRODUCT SUMMARY
IT(AV)
160 A
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUE
UNITS
A
IT(AV)
85 ° C
160
IT(RMS)
85 ° C
251
ITSM
I2t
50 Hz
5400
60 Hz
5670
50 Hz
146
60 Hz
133
I2√t
1458
A
kA2s
kA2√s
VDRM / VRRM
Range
400 to 1600
V
TJ
Range
-40 to 125
° C
www.nellsemi.com
Page 1 of 4
RoHS
RoHS
NKT160A/NKH160A Series
SEMICONDUCTOR
Nell High Power Products
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VRRM /V DRM , MAXIMUM REPETITIVE
PEAK REVERSE VOLTAGE
V
VRSM /V DSM , MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
04
400
500
08
800
900
12
1200
1300
14
1400
1500
16
1600
1700
NKT160
NKH160
IRRM /I DRM
AT 125 ° C
mA
20
FORWARD CONDUCTION
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum average on-state current
at case temperature
IT(AV)
180° conduction, half sine wave ,50Hz
Maximum RMS on-state current
lT(RMS)
180° conduction, half sine wave ,50Hz ,TC = 85°C
Maximum peak, one-cycle, on-state
non-repetitive surge current
ITSM
I 2t
UNITS
160
A
85
°C
251
t = 10 ms
5400
t = 8.3 ms
5670
No voltage
reapplied
t = 10 ms
Maximum I 2t for fusing
VALUE
t = 8.3 ms
Sine half wave,
initial TJ =
TJ maximum
100%V RRM
reapplied
t = 10 ms
t = 8.3 ms
146
133
93
Maximum I 2√t for fusing
I t
t = 0.1 ms to 10 ms, no voltage reapplied
1458
Maximum on-state voltage drop
VTM
ITM = 480A , TJ = 25 ° C, 180° conduction
1.7
Maximum forward voltage drop
VFM
IFM = 480A, TJ = 25 ° C, 180° conduction
1.4
Maximum latching current
kA2s
102
2√
Maximum holding current
A
kA2√s
V
IH
Anode supply = 6 V initial I T = 30 A, TJ = 25 ° C
IL
Anode supply = 6 V resistive load = 1 Ω
Gate pulse: 10 V, 100 μs, TJ = 25 ° C
40~150
400
mA
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum peak reverse and
off-state leakage current
IRRM,
IDRM
TJ = 125 ° C
RMS isolation Voltage
VISO
50 Hz, circuit to base,
all terminals shorted
Critical rate of rise of
off-state voltage
dV/dt
TJ = TJ maximum,
exponential to 67 % rated V DRM
www.nellsemi.com
Page 2 of 4
VALUES
UNITS
20
mA
2500 (1min)
3500 (1s)
800
V
V/μs
NKT160A/NKH160A Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
TRIGGERING
PARAMETER
SYMBOL
Maximum peak gate power
Maximum average gate power
TEST CONDITIONS
VALUES
PGM
t p ≤ 5 ms, TJ = TJ maximum
10
PG(AV)
f = 50 Hz, TJ = TJ maximum
3
IGM
Maximum peak gate current
Maximum peak negative
gate voltage
- VGT
3
t p ≤ 5 ms, TJ = TJ maximum
UNITS
W
A
10
V
Maximum required DC
gate voltage to trigger
VGT
0.7~1.8
Anode supply = 6 V,
resistive load; Ra = 1 Ω
TJ = 25 ° C
Maximum required DC
I GT
gate current to trigger
Maximum gate voltage
that will not trigger
VGD
Maximum gate current
that will not trigger
I GD
Maximum rate of rise of
turned-on current
dI/dt
30~150
mA
0.25
V
10
mA
150
A/μs
TJ = TJ maximum, 66.7% V DRM applied
TJ = 25ºC ,IGM = 1.5A ,tr ≤ 0.5 µs
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
Maximum junction operating
temperature range
TEST CONDITIONS
VALUES
UNITS
TJ
- 40 to 125
Maximum storage
temperature range
TStg
- 40 to 150
Maximum thermal resistance,
junction to ca se per junction
RthJC
DC operation
0.17
Maximum thermal resistance,
case to heatsink per module
RthCS
Mounting surface, smooth , flat and greased
0.055
A mounting compound is recommended and the
torque should be rechecked after a period of
3 hours to allow for the spread of the compound.
Lubricated threads.
4 to 6
N.m
220
g
7.05
oz.
Mounting
torque ± 10 %
°C
° C/W
IAP to heatsink , M6
busbar to IAP , M6
Approximate weight
New INT-A-PAK
Case style
ORDERING INFORMATION TABLE
Device code
www.nellsemi.com
NKT
160
1
2
/
16
A
3
4
1
-
Module type: NKT for (Thyristor + Thyristor) module
NKH for (Thyristor + Diode) module
2
-
Current rating: IT(AV)
3
-
Voltage code x 100 = V RRM
4
-
Assembly type,”A” for soldering type
Page 3 of 4
NKT160A/NKH160A Series
SEMICONDUCTOR
RoHS
RoHS
Nell High Power Products
Fig.1 On-state current vs. voltage characteristic
Fig.2 Transient thermal impedance(junction-case)
T J = 125 ° C
3.6
2.9
2.2
1.5
0.18
0.15
0.12
0.09
0.06
0.03
0.00
0.8
100
1000
0.001
10000
0.01
0.1
On-state current (A)
Fig.4 Case temperature vs. on-state average current
Fig.3 Power consumption vs. average current
140
350
180°
300
120°
180
0
90°
60°
Conduction Angle
250
30°
200
150
120
ase temperature (° C)
Maximum power consumption (W)
400
100
180
0
100
Conduction Angle
80
60
40
20
50
90°
60°
30°
120°
180°
0
0
0
50
100
150
200
0
50
100
On-state average current (A)
150
200
300
250
On-state average current (A)
Fig.5 On-state surge current vs cycles
Fig.6 Gate characteristics
6
2
Peak Forward Gate Voltage (10V)
10 1
5
Gate voltage (V)
On-state surge current (KA)
10
1
Time (s)
4
3
Pe
Po ak
Av
we Ga
r ( te
Po era
10
we ge
w)
r( G
3w at
e
)
5
2
10 0
5
125 ° C 25 ° C
2
2
10
1
1
10
100
www.nellsemi.com
-30°C
Maximum Gate Voltage that will not trigger any unit
-1
10 1
2
5
10 2
2
5
10 3
Gate current (mA)
Cycles @50Hz
Page 4 of 4
Peak Gate Current (3A)
On-state peak voltage (V)
4.3
Transient thermal impedance (° C/W)
5
2
5