RoHS NKT600/NKH600 Series RoHS SEMICONDUCTOR Nell High Power Products Thyristor/Diode and Thyristor/Thyristor, 600A (SUPER MAGN-A-PAK Power Modules) 48 50 38 48 SUPER MAGN -A-PAK 66+1 36+1 4-Ø6.5 14 112+1 FEATURES 128+1 150+3 • High voltage • Electrically isolated by DBC ceramic (AI 2O3) 3-M10 SCREWS • 3500 V RMS isolating voltage 2.8x0.8+0.1 • Industrial standard package 50 • Modules uses high voltage power thyristor/diodes in two basic configurations 60 • Glass passivated chips 53 22 • High surge capability • Simple mounting • UL approved file E320098 All dimensions in millimeters • Compliant to RoHS • Designed and qualified for multiple level APPLICATIONS • DC motor control and drives K2 G2 • Battery charges ~ - + • Welders G1 K1 • Power converters NKT • Lighting control • Heat and temperature control • Ups ~ - + G1 K1 PRODUCT SUMMARY IT(AV) 600 A MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS 600 A IT(AV) 85 °C IT(RMS) 85 °C 942 50 Hz 18000 60 Hz 18900 50 Hz 1620 60 Hz 1478 ITSM I2t I2√t 16200 A kA2s kA2√s VDRM/VRRM Range 400 to 1600 V TJ Range -40 to 125 °C www.nellsemi.com Page 1 of 4 NKH RoHS NKT600/NKH600 Series RoHS SEMICONDUCTOR Nell High Power Products ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER VOLTAGE CODE VRRM /V DRM , MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM /V DSM , MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V 04 400 500 08 800 900 10 1000 1100 12 1200 1300 14 1400 1500 16 1600 1700 NKT600 NKH600 IRRM /I DRM AT 125 °C mA 40 FORWARD CONDUCTION PARAMETER Maximum average on-state current at case temperature Maximum RMS on-state current Maximum peak, one-cycle, on-state non-repetitive surge current SYMBOL lT(AV) lT(RMS) ITSM TEST CONDITIONS 180° conduction, half sine wave ,50Hz 180° conduction, half sine wave ,50Hz ,TC = 85°C t = 10 ms t = 8.3 ms t = 10 ms Maximum I 2t for fusing I 2t No voltage reapplied t = 8.3 ms A 85 °C 942 100%V RRM reapplied 1620 1478 kA2s 1134 1033 Maximum I 2√t for fusing I t t = 0.1 ms to 10 ms, no voltage reapplied 16200 Maximum on-state voltage drop VTM lTM= 1800A, TJ = 25 °C, 180° conduction 1.9 Maximum forward voltage drop VFM lFM = 1800A, TJ = 25 °C, 180° conduction 1.6 IH Anode supply = 12 V initial I T = 30 A, TJ = 25 °C 300 IL Anode supply = 12 V resistive load = 1 Ω Gate pulse: 10 V, 100 μs, TJ = 25 °C 500 Maximum latching current A 18900 Sine half wave, initial TJ = TJ maximum 2√ Maximum holding current UNITS 600 18000 t = 8.3 ms t = 10 ms VALUES kA2√s V mA SWITCHING PARAMETER SYMBOL Typical delay time td Typical rise time tr TEST CONDITIONS VALUES TJ = 25 °C ,gate current = 1A dlg/dt = 1 A/µs 1 V d = 0.67 % V DRM 2 UNITS μs Typical tum-off time www.nellsemi.com tq ITM = 300A ; dl/dt = 15 A/µs ; TJ = TJ maximum, VR = 50V ; dV/dt = 20V/µs ; gate 0V ,100Ω Page 2 of 4 50 to 150 RoHS NKT600/NKH600 Series RoHS SEMICONDUCTOR Nell High Power Products BLOCKING PARAMETER SYMBOL TEST CONDITIONS Maximum peak reverse and off-state leakage current IRRM, IDRM TJ = 125 °C RMS isolation Voltage VISO 50 Hz, circuit to base, all terminals shorted, 25 ºC ,1s Critical rate of rise of off-state voltage dV/dt TJ = TJ maximum, exponential to 67 % rated V DRM VALUES UNITS 40 mA 3500 V 500 V/μs VALUES UNITS TRIGGERING PARAMETER SYMBOL Maximum peak gate power Maximum average gate power Maximum peak gate current Maximum peak negative gate voltage Maximum required DC gate voltage to trigger Maximum required DC gate current to trigger TEST CONDITIONS PGM t p ≤ 5 ms, TJ = TJ maximum 10 PG(AV) f = 50 Hz, TJ = TJ maximum 3 IGM - VGT 3 t p ≤ 5 ms, TJ = TJ maximum W A 10 V VGT 2 Anode supply = 12 V, resistive load; Ra = 1 Ω TJ = 25 °C I GT Maximum gate voltage that will not trigger VGD Maximum gate current that will not trigger I GD Maximum rate of rise of turned-on current dI/dt 200 mA 0.25 V 10 mA 150 A/μs VALUES UNITS - 40 to 125 °C TJ = TJ maximum, 67% V DRM applied TJ = 25ºC ,IGM = 1.5A ,tr ≤ 0.5 µs THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS junction operating and storage temperature range TJ, Tstg Maximum thermal resistance, junction to case per junction RthJC DC operation 0.06 Typical thermal resistance, case to heatsink per module RthCS Mounting surface, smooth , flat and greased 0.009 Mounting torque ± 10 % IAP to heatsink , M6 busbar to IAP , M10 °C/W A mounting compound is recommended and the torque should be rechecked after a period of about 3 hours to allow for the spread of the compound. Approximate weight Case style www.nellsemi.com 4 N.m 12 1800 g 63.5 oz. Super MAGN-A-PAK Page 3 of 4 RoHS NKT600/NKH600 Series RoHS SEMICONDUCTOR Nell High Power Products Fig.1 On-state current vs. voltage characteristics Fig.2 Transient thermal impedance(junction-case) 3.6 Transient thermal impedance (°C/W) 0.07 On-state peak voltage (V) 3.2 T J = 125°C 2.8 2.4 2 1.6 1.2 0.8 100 1000 0.06 0.05 0.04 0.03 0.02 0.01 0 0.001 10000 0.01 0.1 On-state current (A) Time (s) Fig.4 Case temperature vs. on-state average current Fig.3 Power consumption vs. average current 140 180° 120° 180 0 ase temperature (°C) Maximum power consumption (W) 800 600 90° Conduction Angle 60° 30° 400 200 120 0 100 180 Conduction Angle 80 60 40 20 30° 60° 90° 120° 180° 0 0 0 100 200 300 400 500 0 600 On-state average current (A) 200 400 600 800 1000 On-state average current (A) 2 Fig.5 On-state surge current vs cycles Fig.6 I t characteristics 1900 18 16 1600 14 A S (1000A S) 1300 2 12 10 2 On-state surge current (KA) 10 1 8 1000 700 400 6 4 100 1 10 100 Cycles @50Hz www.nellsemi.com Page 4 of 4 10 1 Time (ms)