2SK1070 Silicon N-Channel Junction FET REJ03G0574-0200 (Previous ADE-208-1175 (Z)) Rev.2.00 Mar.14.2005 Application • Low frequency / High frequency amplifier Outline RENESAS Package code: PLSP0003ZB-A (Package name: MPAK) 3 1 2 1. Drain 2. Source 3. Gate Absolute Maximum Ratings (Ta = 25°C) Item Gate to drain voltage Gate to source voltage Drain current Gate current Channel power dissipation Channel temperature Storage temperature Rev.2.00, Mar.14.2005, page 1 of 4 Symbol VGDO VGSO ID IG Pch Tch Tstg Ratings –22 –22 50 10 150 150 –55 to +150 Unit V V mA mA mW °C °C 2SK1070 Electrical Characteristics (Ta = 25°C) Item Symbol Min Gate cutoff current IGSS — Gate to source breakdown voltage V(BR)GSS –22 Drain current IDSS*1 12 Gate to source cutoff voltage VGS(off) 0 Forward transfer admittance |yfs| 20 Input capacitance Ciss — Notes: 1. The 2SK1070 is grouped by IDSS as follows. Grade C D E Mark PIC PID PIE IDSS 12 to 22 18 to 30 27 to 40 Typ — — — — 30 9 Max –10 — 40 –2.5 — — Unit nA V mA V mS pF Test conditions VGS = –15 V, VDS = 0 IG = –10 µA, VDS = 0 VDS = 5 V, VGS = 0, Pulse test VDS = 5 V, ID = 10 µA VDS = 5 V, VGS = 0, f = 1 kHz VDS = 5 V, VGS = 0, f = 1 MHz Main Characteristics Typical Output Characteristics 20 150 VGS = 0 V Drain Current ID (mA) Channel Power Dissipation Pch (mW) Maximum Channel Dissipation Curve 100 50 0 16 –0.3 8 –0.5 Forward Transfer Admittance yfs (mS) Drain Current ID (mA) 12 8 4 Rev.2.00, Mar.14.2005, page 2 of 4 2 4 6 8 10 Drain to Source Voltage VDS (V) 100 16 –1.0 –0.75 –0.5 –0.25 Gate to Source Voltage VGS (V) –0.6 Forward Transfer Admittance vs. Drain Current VDS = 5 V 0 –1.25 –0.4 4 Typical Transfer Characteristics 20 –0.2 12 0 50 100 150 Ambient Temperature Ta (ºC) –0.1 0 VDS = 5 V f = 1 kHz 10 1.0 0.1 0.1 1.0 10 Drain Current ID (mA) 100 2SK1070 Forward Transfer Admittance vs. Gate to Source Voltage Gate Cutoff Current vs. Gate to Source Voltage 40 1,000 VDS = 5 V f = 1 kHz Gate Cutoff Current IGSS (pA) Forward Transfer Admittance yfs (mS) 50 30 20 10 0 –1.25 VDS = 0 100 10 1.0 0.1 –1.0 –0.75 –0.5 –0.25 Gate to Source Voltage VGS (V) 0 0 Reverse Transfer Capacitance vs. Drain to Source Voltage Input Capacitance Ciss (pF) Reverse Transfer Capacitance Crss (pF) Input Capacitance vs. Drain to Source Voltage 100 f = 1 MHz VGS = 0 50 20 10 5 2 1 0.1 0.2 0.5 1.0 2 5 Drain to Source Voltage VDS (V) 100 10 Noise Figure vs. Signal Source Resistance 20 10 5 2 1 0.1 0.2 0.5 1.0 2 5 Drain to Source Voltage VDS (V) 10 Noise Figure vs. Frequency VDS = 5 V ID = 1 mA f = 1 kHz 10 8 6 4 2 100 1k 10 k Signal Source Resistance Rg (Ω) Rev.2.00, Mar.14.2005, page 3 of 4 100 k Noise Figure NF (dB) Noise Figure NF (dB) f = 1 MHz VGS = 0 50 12 12 0 10 –10 –20 –30 –40 –50 Gate to Source Voltage VGS (V) VDS = 5 V ID = 1 mA Rg = 1 kΩ 10 8 6 4 2 0 10 100 1k 10 k Frequency f (Hz) 100 k 2SK1070 Package Dimensions JEITA Package Code RENESAS Code Package Name MPAK(T) / MPAK(T)V, MPAK / MPAKV PLSP0003ZB-A SC-59A D MASS[Typ.] 0.011g A Q e E HE L A c LP L1 Reference Symbol A3 A x M S b A e A2 A e1 A1 S b b1 c1 I1 c b2 A-A Section Pattern of terminal position areas A A1 A2 A3 b b1 c c1 D E e HE L L1 LP x b2 e1 I1 Q Dimension in Millimeters Min 1.0 0 1.0 0.35 0.1 2.7 1.35 2.2 0.35 0.15 0.25 Nom 1.1 0.25 0.42 0.4 0.13 0.11 1.5 0.95 2.8 Max 1.3 0.1 1.2 0.5 0.15 3.1 1.65 3.0 0.75 0.55 0.65 0.05 0.55 1.95 1.05 0.3 Ordering Information Part Name 2SK1070PICTL-E 2SK1070PIDTL-E 2SK1070PIETL-E Quantity 3000 3000 3000 Shipping Container φ178 mm reel, 8 mm Emboss Taping φ178 mm reel, 8 mm Emboss Taping φ178 mm reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00, Mar.14.2005, page 4 of 4 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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