3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier REJ03G1247-0200 (Previous: ADE-208-778) Rev.2.00 Aug. 10, 2005 Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics; (PG = 27.6 dB typ. at f = 200 MHz) Outline RENESAS Package code: PTSP0004ZA-A (Package name: CMPAK-4) 2 3 1 4 Note: Rev.2.00 Marking is “ZR-“. Aug 10, 2005, page 1 of 6 1. Source 2. Gate1 3. Gate2 4. Drain 3SK317 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate1 to source voltage Gate2 to source voltage Drain current Channel power dissipation Channel temperature Storage temperature Symbol VDS VG1S VG2S ID Pch Tch Tstg Ratings 14 ±8 ±8 25 100 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate1 to source breakdown voltage Gate2 to source breakdown voltage Gate1 to source cutoff current Gate2 to source cutoff current Gate1 to source cutoff voltage Symbol V(BR)DSS V(BR)G1SS V(BR)G2SS IG1SS IG2SS VG1S(off) Min 14 ±8 ±8 — — 0 Typ — — — — — 0.2 Max — — — ±100 ±100 1 Unit V V V nA nA V VG2S(off) 0 0.3 1 V IDS(op) 4 8 14 mA VDS = 6 V, VG1S = 0.75 V, VG2S = 3 V Forward transfer admittance |yfs| 20 25 — mS VDS = 6 V, VG2S = 3 V ID = 10 mA, f = 1 kHz Input capacitance Output capacitance Reverse transfer capacitance Power gain Noise figure Power gain Noise figure Noise figure Ciss Coss Crss PG NF PG NF NF 2.4 0.8 — 24 — 12 — — 3.1 1.1 0.021 27.6 1.0 15.6 3 2.7 3.5 1.4 0.04 — 1.5 — 4 3.5 pF pF pF dB dB dB dB dB VDS = 6 V, VG2S = 3 V, ID = 10 mA, f = 1 MHz Gate2 to source cutoff voltage Drain current Rev.2.00 Aug 10, 2005, page 2 of 6 Test Conditions ID = 200 µA , VG1S = VG2S = –3 V IG1 = ±10 µA, VG2S = VDS = 0 IG2 = ±10 µA, VG1S = VDS = 0 VG1S = ±6 V, VG2S = VDS = 0 VG2S = ±6 V, VG1S = VDS = 0 VDS = 10 V, VG2S = 3 V, ID = 100 µA VDS = 10 V, VG1S = 3 V, ID = 100 µA VDS = 6 V, VG2S = 3 V, ID = 10 mA , f = 200 MHz VDS = 6 V, VG2S = 3 V, ID = 10 mA, f = 900 MHz VDS = 6 V, VG2S = 3 V ID = 10 mA, f = 60 MHz 3SK317 Main Characteristics Typical Output Characteristics 200 ID (mA) 20 150 100 50 0 50 100 150 200 16 1.0 V 0.8 V 8 0.6 V 4 0 (°C) 3.0 V 2.0 V 16 20 VDS = 6 V Pulse test 2.5 V 1.5 V Drain Current 12 1.0 V 8 4 6 8 10 Drain Current vs. Gate2 to Source Voltage ID (mA) 20 2 Drain to Source Voltage VDS (V) Drain Current vs. Gate1 to Source Voltage ID (mA) VG2S = 3 V Pulse test VG1S = 0.4 V Ambient Temperature Ta Drain Current 1.2 V 12 Drain Current Channel Power Dissipation Pch (mW) Maximum Channel Power Dissipation Curve 4 3.0 V 2.0 V VDS = 6 V Pulse test 2.5 V 16 1.5 V 1.0 V 12 8 4 VG1S = 0.5 V VG2S = 0.5 V 0 1 2 3 4 Gate1 to Source Voltage 0 5 VG1S (V) 3 4 5 VG2S (V) Power Gain vs. Drain Current 50 30 VDS = 6 V f = 1 kHz 3V Power gain PG (dB) Forward transfer admittance |yfs| (mS) 2 Gate2 to Source Voltage Forward Transfer Admittance vs. Gate1 to Source Voltage 24 2.5 V 18 2V 12 1.5 V 6 1V VDS = 6 V VG2S = 3 V f = 200 MHz 40 30 20 10 VG2S = 0.5 V 0 0.4 0.8 1.2 Gate1 to Source Voltage Rev.2.00 1 Aug 10, 2005, 1.6 VG1S (V) page 3 of 6 2 0 4 8 Drain Current 12 16 ID (mA) 20 3SK317 Power Gain vs. Drain to Source Voltage Noise Figure vs. Drain Current 50 VDS = 6 V VG2S = 3 V f = 200 MHz 4 Power Gain PG (dB) Noise Figure NF (dB) 5 3 2 1 0 4 8 12 16 20 VG2S = 3 V ID = 10 mA f = 200 MHz 40 30 20 10 0 Drain Current ID (mA) 2 Power Gain PG (dB) NF (dB) Noise Figure 4 3 2 1 2 4 6 8 12 8 VDS = 6 V VG2S = 3 V f = 900 MHz 4 0 (V) 4 8 12 16 20 Drain Current ID (mA) Power Gain vs. Drain to Source Voltage 5 20 4 Power Gain PG (dB) NF (dB) (V) 16 10 Noise Figure vs. Drain Current Noise Figure 10 20 VG2S = 3 V ID = 10 mA f = 200 MHz Drain to Source Voltage VDS 3 2 VDS = 6 V VG2S = 3 V f = 900 MHz 1 4 8 12 16 Drain Current ID (mA) Rev.2.00 8 Power Gain vs. Drain Current 5 0 6 Drain to Source Voltage VDS Noise Figure vs. Drain to Source Voltage 0 4 Aug 10, 2005, page 4 of 6 20 16 12 8 VG2S = 3 V ID = 10 mA f = 900 MHz 4 0 2 4 6 8 Drain to Source Voltage VDS 10 (V) 3SK317 Noise Figure vs. Drain to Source Voltage Noise Figure vs. Drain Current 5 8 NF (dB) VG2S = 3 V ID = 10 mA f = 900 MHz 6 Noise Figure Noise Figure NF (dB) 10 4 2 0 2 4 6 8 Drain to Source Voltage VDS 10 (V) Noise Figure vs. Drain to Source Voltage Noise Figure NF (dB) 5 VG2S = 3 V ID = 10 mA f = 60 MHz 4 3 2 1 0 2 4 6 8 Drain to Source Voltage VDS Rev.2.00 Aug 10, 2005, page 5 of 6 10 (V) VDS = 6 V VG2S = 3 V f = 60 MHz 4 3 2 1 0 4 8 Drain Current 12 16 ID (mA) 20 3SK317 Package Dimensions JEITA Package Code RENESAS Code SC-82A Package Name PTSP0004ZA-A CMPAK-4(T) / CMPAK-4(T)V D MASS[Typ.] 0.006g A e2 e Q b1 c B B E HE LP Reference Symbol L A A x M L1 S A e2 A2 A b5 S b e l1 A1 y S b2 A3 b e1 b1 b3 c1 c c1 c A-A Section l1 b4 B-B Section Pattern of terminal position areas A A1 A2 A3 b b1 b2 b3 c c1 D E e e2 HE L L1 LP x y b4 b5 e1 l1 Q Dimension in Millimeters Min 0.8 0 0.8 0.25 0.35 0.1 1.8 1.15 1.8 0.3 0.1 0.2 Nom 0.9 0.25 0.32 0.42 0.3 0.4 0.13 0.11 2.0 1.25 0.65 0.6 2.1 Max 1.1 0.1 1.0 0.4 0.5 0.15 2.2 1.35 2.4 0.7 0.5 0.6 0.05 0.05 0.45 0.55 1.5 0.9 0.2 Ordering Information Part Name 3SK317ZR-TL-E Quantity 3000 Shipping Container φ178 mm Reel, 8 mm Emboss Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Aug 10, 2005, page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. 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