RENESAS RJK6020DPK

RJK6020DPK
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G1465-0200
Rev.2.00
Sep 21, 2006
Features
• Low on-resistance
• Low leakage current
• High speed switching
Outline
RENESAS Package code: PRSS0004ZE-A
(Package name:TO-3P)
D
1. Gate
2. Drain (Flange)
3. Source
G
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. STch = 25°C, Tch ≤ 150°C
Rev.2.00 Sep 21, 2006 page 1 of 6
Symbol
VDSS
VGSS
ID
ID (pulse)Note1
Ratings
600
±30
32
96
Unit
V
V
A
A
IDR
IDR (pulse)Note1
IAPNote3
EARNote3
Pch Note2
θch-c
Tch
Tstg
32
96
8.5
3.9
200
0.625
150
–55 to +150
A
A
A
mJ
W
°C/W
°C
°C
RJK6020DPK
Electrical Characteristics
(Ta = 25°C)
Item
Drain to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Static drain to source on state
resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate to source charge
Gate to drain charge
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Notes: 4. Pulse test
Rev.2.00 Sep 21, 2006 page 2 of 6
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
RDS(on)
Min
600
—
—
3.0
—
Typ
—
—
—
—
0.155
Max
—
1
±0.1
4.5
0.175
Unit
V
µA
µA
V
Ω
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDF
—
—
—
—
—
—
—
—
—
—
—
5150
480
52
55
100
176
100
121
28
50
0.88
—
—
—
—
—
—
—
—
—
—
1.50
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
trr
—
520
—
ns
Test conditions
ID = 10 mA, VGS = 0
VDS = 600 V, VGS = 0
VGS = ±30 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 16 A, VGS = 10 V Note4
VDS = 25 V
VGS = 0
f = 1 MHz
ID = 16 A
VGS = 10 V
RL = 18.8 Ω
Rg = 10 Ω
VDD = 480 V
VGS = 10 V
ID = 32 A
IF = 32 A, VGS = 0 Note4
IF = 32 A, VGS = 0
diF/dt = 100 A/µs
RJK6020DPK
Main Characteristics
Power vs. Temperature Derating
Maximum Safe Operation Area
ID (A)
1000
300
Drain Current
Channel Dissipation
Pch (W)
400
200
100
100
1m
10
50
100
DC Operation
(Tc = 25°C)
1
PW = 10 ms
(1shot)
0.1
Operation in this
area is limited by
0.01 RDS(on)
0.001
0.1
200
150
Case Temperature
Tc (°C)
1
VDS (V)
100
6V
5.8 V
8 V, 10V
5.6 V
20
5.2 V
10
VGS = 5 V
Drain Current
30
5.4 V
VDS = 10 V
Pulse Test
50
ID (A)
ID (A)
1000
Typical Transfer Characteristics
50
40
100
10
Drain to Source Voltage
Typical Output Characteristics
Drain Current
10
µs
0µ
s
Ta = 25°C
0
20
10
5
2
1
Tc = 75°C
0.5
25°C
−25°C
0.2
Pulse Test
0.1
4
8
12
16
VDS (V)
Drain to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
1
VGS = 10 V
0.5
0.2
0.1
0.05
0.02
Pulse Test
0.01
1
3
10
30
Drain Current
Rev.2.00 Sep 21, 2006 page 3 of 6
0
20
100
300
ID (A)
1000
2
4
6
8
Gate to Source Voltage
Static Drain to Source on State Resistance
RDS(on) (Ω)
0
Drain to Source on State Resistance
RDS(on) (Ω)
10
s
10
VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.5
VGS = 10 V
0.4
16 A
0.3
ID = 32 A
10 A
0.2
0.1
Pulse Test
0
−25
0
25
50
75
Case Temperature
100 125 150
Tc (°C)
RJK6020DPK
Typical Capacitance vs.
Drain to Source Voltage
Body-Drain Diode Reverse
Recovery Time
100000
500
200
100
50
20
10
5
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
2
1
3
10
30
100
Reverse Drain Current
300
10000
3000
1000
300
IDR (A)
4
VDD = 480 V
300 V
100 V
0
40
80
120
Gate Charge
160
200
Qg (nC)
Gate to Source Cutoff Voltage
vs. Case Temperature
5
VDS = 10 V
ID = 10 mA
4
1 mA
3
0.1 mA
2
1
0
-25
0
25
50
75
Case Temperature
Rev.2.00 Sep 21, 2006 page 4 of 6
100 125 150
Tc (°C)
IDR (A)
12
8
0
300
VDS (V)
50
Reverse Drain Current
16
VGS
400
200
200
Drain to Source Voltage
VGS (V)
VDS
100
Reverse Drain Current vs.
Source to Drain Voltage
VDD = 100 V
300 V
480 V
600
Crss
10
0
1000
Gate to Source Voltage
VDS (V)
Drain to Source Voltage
ID = 32 A
Coss
100
Dynamic Input Characteristics
800
Ciss
30
1
Gate to Source Cutoff Voltage
VGS(off) (V)
VGS = 0
f = 1 MHz
30000
Capacitance C (pF)
Reverse Recovery Time trr (ns)
1000
Pulse Test
40
30
20
10
0
5, 10 V
0.4
VGS = 0, -5 V
0.8
1.2
Source to Drain Voltage
1.6
2.0
VSD (V)
RJK6020DPK
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
θ ch – c(t) = γ s (t) • θ ch – c
θ ch – c = 0.625°C/W, Tc = 25°C
0.1
0.05
0.03
PDM
0.02
1
0.0
0.01
10 µ
D=
lse
t
ho
PW
T
PW
T
pu
1s
100 µ
1m
10 m
Pulse Width
100 m
1
10
PW (s)
Switching Time Test Circuit
Waveform
Vout
Monitor
Vin Monitor
90%
D.U.T.
RL
10 Ω
Vin
10 V
VDD
= 300 V
Vin
Vout
10%
10%
10%
90%
td(on)
Rev.2.00 Sep 21, 2006 page 5 of 6
tr
90%
td(off)
tf
RJK6020DPK
Package Dimensions
JEITA Package Code
SC-65
Previous Code
TO-3P / TO-3PV
RENESAS Code
PRSS0004ZE-A
15.6 ± 0.3
MASS[Typ.]
5.0g
Unit: mm
4.8 ± 0.2
1.5
0.3
19.9 ± 0.2
2.0
14.9 ± 0.2
0.5
1.0
φ3.2 ± 0.2
5.0 ± 0.3
Package Name
TO-3P
1.6
2.0
1.4 Max
18.0 ± 0.5
2.8
1.0 ± 0.2
3.6
0.6 ± 0.2
0.9
1.0
5.45 ± 0.5
5.45 ± 0.5
Ordering Information
Part Name
RJK6020DPK-00-T0
Quantity
360 pcs
Shipping Container
Box (Tube)
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.2.00 Sep 21, 2006 page 6 of 6
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