RJK0305DPB Silicon N Channel Power MOS FET Power Switching REJ03G1353-0900 Rev.9.00 Apr 19, 2006 Features • • • • • High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6.7 mΩ typ. (at VGS = 10 V) Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 1, 2, 3 4 5 4 G 3 12 4 Source Gate Drain S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to Case Thermal Resistance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C Rev.9.00 Apr 19, 2006 page 1 of 6 Symbol VDSS VGSS ID Note1 ID(pulse) IDR IAP Note 2 EAR Note 2 Pch Note3 θch-C Tch Tstg Ratings 30 +16/-12 30 120 30 10 10 45 2.78 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C RJK0305DPB Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate Resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Notes: 4. Pulse test Rev.9.00 Apr 19, 2006 page 2 of 6 Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 30 — — 1.2 — — — — — — — — — — — — — Typ — — — — 6.7 10 45 1250 530 70 0.6 8 3.6 1.5 7.0 3.0 35 Max — ± 0.1 1 2.5 8.0 13 — — — — — — — — — — — Unit V µA µA V mΩ mΩ S pF pF pF Ω nC nC nC ns ns ns — — — 3.0 0.85 30 — 1.08 — ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = +16/–12 V, VDS = 0 VDS = 30 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 15 A, VGS = 10 V Note4 ID = 15 A, VGS = 4.5 V Note4 ID = 15 A, VDS = 10 V Note4 VDS = 10 V, VGS = 0, f = 1 MHz VDD = 10 V, VGS = 4.5 V, ID = 30 A VGS = 10 V, ID = 15 A, VDD ≅ 10 V,RL = 0.67 Ω, Rg = 4.7 Ω IF = 30 A, VGS = 0 Note4 IF = 30 A, VGS = 0 diF/ dt = 100 A/ µs RJK0305DPB Main Characteristics Maximum Safe Operation Area Power vs. Temperature Derating ID (A) 1000 Drain Current 60 40 20 50 100 150 Case Temperature Operation in 1 DS(on) 0.1 1 shot Pulse 0.1 1 200 10 Drain to Source Voltage Tc (°C) Typical Output Characteristics 100 VDS (V) Typical Transfer Characteristics 50 50 40 3.1 V 30 2.9 V 20 2.7 V VGS = 2.5 V 10 VDS = 10 V Pulse Test 40 30 Drain Current 10 V ID (A) Pulse Test 4.5 V ID (A) 1 ms 10 Tc = 25°C 0 Drain Current 10 µs 100 µs Channel Dissipation Pch (W) 80 20 25°C 10 Tc = 75°C –25°C 0 2 4 6 Drain to Source Voltage 8 0 10 150 100 ID = 10 A 50 5A 2A 0 4 8 12 Gate to Source Voltage Rev.9.00 Apr 19, 2006 page 3 of 6 16 20 VGS (V) 3 4 5 VGS (V) Static Drain to Source on State Resistance vs. Drain Current Drain to Source on State Resistance RDS (on) (mΩ) Drain to Source Saturation Voltage VDS (on) (mV) Pulse Test 2 Gate to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 200 1 100 Pulse Test 30 VGS = 4.5 V 10 10 V 3 1 1 3 10 30 Drain Current 100 ID 300 1000 (A) Static Drain to Source on State Resistance vs. Temperature Typical Capacitance vs. Drain to Source Voltage 20 10000 Pulse Test 3000 16 ID = 2 A, 5 A, 10 A 12 Capacitance C (pF) Static Drain to Source on State Resistance RDS (on) (mΩ) RJK0305DPB VGS = 4.5 V 8 2 A, 5 A, 10 A 10 V 4 Ciss 1000 Coss 300 100 30 0 –25 0 25 50 75 10 0 100 125 150 Case Temperature Tc (°C) 20 8 10 4 VDD = 25 V 10 V 0 0 0 8 16 Gate Charge 24 32 40 Repetitive Avalanche Energy EAR (mJ) 20 IAP = 10 A VDD = 15 V duty < 0.1 % Rg ≥ 50 Ω 12 8 4 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Rev.9.00 Apr 19, 2006 page 4 of 6 Pulse Test 10 V 40 5V 30 20 VGS = 0, –5 V 10 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Qg (nc) Maximum Avalanche Energy vs. Channel Temperature Derating 16 30 20 50 Reverse Drain Current IDR (A) 12 VDS VGS (V) 16 VDD = 25 V 10 V Gate to Source Voltage VDS (V) Drain to Source Voltage VGS 40 30 10 Reverse Drain Current vs. Source to Drain Voltage 20 ID = 30 A VGS = 0 f = 1 MHz Drain to Source Voltage VDS (V) Dynamic Input Characteristics 50 Crss RJK0305DPB Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 2.78°C/W, Tc = 25°C 0.1 0.05 0 0.03 .02 D= PDM se ul p 1 0.0 hot s 1 0.01 10 µ PW T PW T 100 µ 1m 10 m 100 m 1 10 Pulse Width PW (s) Avalanche Test Circuit Avalanche Waveform EAR = L VDS Monitor 1 L • IAP2 • 2 VDSS VDSS – VDD IAP Monitor V(BR)DSS IAP Rg VDS VDD D. U. T ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. Rg RL Vin Vout Vin 10 V 10% 10% VDS = 10 V 90% td(on) Rev.9.00 Apr 19, 2006 page 5 of 6 10% tr 90% td(off) tf RJK0305DPB Package Dimensions JEITA Package Code SC-100 Previous Code LFPAKV RENESAS Code PTZZ0005DA-A 4.9 5.3 Max 4.0 ± 0.2 MASS[Typ.] 0.080g +0.05 4.2 6.1 –0.3 +0.1 3.95 5 4 +0.05 0.20 –0.03 0° – 8° +0.25 1 1.1 Max +0.03 0.07 –0.04 3.3 1.0 0.25 –0.03 Unit: mm 0.6 –0.20 1.3 Max Package Name LFPAK 0.75 Max 0.10 1.27 0.40 ± 0.06 0.25 M (Ni/Pd/Au plating) Ordering Information Part Name RJK0305DPB-00-J0 Quantity 2500 pcs Shipping Container Taping Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.9.00 Apr 19, 2006 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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