2SK1947 Silicon N Channel MOS FET REJ03G0986-0200 (Previous: ADE-208-1334) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current Built-in fast recovery diode (trr = 140 ns) Suitable for switching regulator, motor control Outline RENESAS Package code: PRSS0004ZF-A (Package name: TO-3PL) D 1. Gate 2. Drain (Flange) 3. Source G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 S 2 3 2SK1947 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Symbol VDSS Ratings 250 Unit V VGSS ID ±30 50 V A ID(pulse)* IDR 200 50 A A 2 1 Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Pch* Tch 200 150 W Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Tstg –55 to +150 °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V(BR)DSS Min 250 Typ — Max — Unit V Gate to source breakdown voltage Gate to source leak current V(BR)GSS IGSS ±30 — — — — ±10 V µA IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 Zero gate voltage drain current Gate to source cutoff voltage IDSS VGS(off) — 2.0 — — 250 3.0 µA V VDS = 200 V, VGS = 0 ID = 1 mA, VDS = 10 V Static drain to source on state resistance Forward transfer admittance RDS(on) — 0.047 0.06 Ω ID = 25 A, VGS = 10 V* |yfs| 20 30 — S ID = 25 A, VDS = 10 V* Input capacitance Output capacitance Ciss Coss — — 5810 2360 — — pF pF VDS = 10 V, VGS = 0, f = 1 MHz Reverse transfer capacitance Turn-on delay time Crss td(on) — — 270 75 — — pF ns tr 270 420 — — ns ns Rise time Turn-off delay time td(off) — — Fall time Body to drain diode forward voltage tf VDF — — 200 1.2 — — ns V trr — 140 — ns Body to drain diode reverse recovery time Note: 3. Pulse Test Rev.2.00 Sep 07, 2005 page 2 of 6 Test conditions ID = 10 mA, VGS = 0 3 3 ID = 25 A, VGS = 10 V, RL = 1.2 Ω IF = 50 A, VGS = 0 IF = 50 A, VGS = 0, diF/dt = 100 A/µs 2SK1947 Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1000 300 Drain Current ID (A) Channel Dissipation Pch (W) 300 200 100 100 10 µs 0µ s 10 PW DC 1m Op = s era 10 m tio s( n( 1s T Operation in this c = 25 hot) area is limited C) 30 10 3 by R DS (on) 1 0.3 Ta = 25°C 0.1 50 0 100 150 1 100 300 1000 Typical Output Characteristics Typical Transfer Characteristics 50 8V 80 60 Drain Current ID (A) 6V 5.5 V 40 5V 20 4V VGS = 3.5 V 4 8 12 16 20 VDS = 10 V Pulse Test 40 30 20 Tc = 25°C 75°C 10 0 2 –25°C 4 8 6 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 5 Pulse Test 4 3 50 A 2 20 A 1 I D = 10 A Static Drain to Source on State Resistance RDS (on) (Ω) Drain Current ID (A) 30 Drain to Source Voltage VDS (V) 10 V Drain to Source Saturation Voltage VDS (on) (V) 10 Case Temperature TC (°C) 100 0 3 10 0.5 Pulse Test 0.2 0.1 VGS = 10 V 0.05 0.02 0.01 0.005 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 6 2 5 10 20 50 Drain Current ID (A) 100 200 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance vs. Temperature 0.20 Pulse Test VGS = 10 V 0.16 0.12 I D = 50 A 0.08 10 A, 20 A 0.04 0 –40 0 80 40 120 160 Tc = 25°C 20 –25°C 5 2 1 0.5 Capacitance C (pF) 50 20 5 10 20 50 Ciss Coss 1000 Crss 100 VGS = 0 f = 1 MHz 10 5 10 1 2 5 10 20 50 100 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 500 VDD = 200 V 100 V 50 V VGS 16 300 ID = 50 A 12 VDS 8 200 0 2 10000 100 100 1 Typical Capacitance vs. Drain to Source Voltage di/dt = 100 A/µs V GS = 0, Ta = 25°C 200 400 75°C 10 Body to Drain Diode Reverse Recovery Time VDD = 200 V 100 V 50 V 80 160 240 4 320 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 6 0 400 Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) Pulse Test V DS = 10 V 50 Drain Current ID (A) 500 Drain to Source Voltage VDS (V) 100 Case Temperature TC (°C) 1000 Switching Time t (ns) Static Drain to Source on State Resistance RDS (on) (Ω) 2SK1947 td(off) 500 tr tf 200 td(on) 100 50 20 VGS = 10 V, VDD = 30 V PW = 2 µs, duty ≤ 1 % 10 0.5 1 2 5 10 20 Drain Current ID (A) 50 2SK1947 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 50 Pulse Test 40 30 20 VGS = 10 V 0, –5 V 10 0 0.4 0.8 1.2 1.6 2.0 Normalized Transient Thermal Impedance γS (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 1 TC = 25°C D=1 0.5 0.3 0.2 θch–c (t) = γS (t) · θch–c θch–c = 0.625°C/W, TC = 25°C 0.1 0.1 0.05 PDM 0.02 0.01 0.03 lse t Pu o 1 Sh 0.01 10 µ T 100 µ 1m 10 m 100 m PW D = PW T 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveforms 90% Vin Monitor Vout Monitor Vin D.U.T. RL Vin 10 V 50 Ω Vout . VDD =. 30 V 10% 90% td (on) Rev.2.00 Sep 07, 2005 page 5 of 6 10% tr 10% 90% td (off) tf 2SK1947 Package Dimensions RENESAS Code PRSS0004ZF-A Package Name MASS[Typ.] TO-3PL / TO-3PLV Unit: mm 9.9g 5.0 ± 0.2 20.0 ± 0.3 φ3.3 ± 0.2 20.0 ± 0.6 2.5 ± 0.3 26.0 ± 0.3 6.0 ± 0.2 JEITA Package Code 1.4 3.0 2.2 1.2 +0.25 –0.1 5.45 ± 0.5 5.45 ± 0.5 0.6 +0.25 –0.1 2.8 ± 0.2 1.0 3.8 7.4 Ordering Information Part Name 2SK1947-E Quantity 500 pcs Shipping Container Box (Case) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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