2SK1402, 2SK1402A Silicon N Channel MOS FET REJ03G0942-0200 (Previous: ADE-208-1282) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 1. Gate 2. Drain (Flange) 3. Source S 3 2SK1402, 2SK1402A Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS Ratings 600 Unit V VGSS 650 ±30 V ID(pulse)* 4 16 A A Body to drain diode reverse drain current Channel dissipation IDR 2 Pch* 4 50 A W Channel temperature Storage temperature Tch Tstg 150 –55 to +150 °C °C 2SK1402 2SK1402A Gate to source voltage Drain current Drain peak current ID 1 Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit V(BR)DSS 600 650 — — — — V ID = 10 mA, VGS = 0 V(BR)GSS IGSS ±30 — — — — ±10 V µA IG = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 IDSS — — 250 µA VDS = 500 V, VGS = 0 VDS = 550 V, VGS = 0 VGS(off) RDS(on) 2.0 — — 1.8 3.0 2.4 V Ω ID = 1 mA, VDS = 10 V 3 ID = 2 A, VGS = 10 V * |yfs| — 2.2 2.0 3.5 2.6 — S ID = 2 A, VDS = 10 V * Input capacitance Output capacitance Ciss Coss — — 600 140 — — pF pF VDS = 10 V, VGS = 0, f = 1 MHz Reverse transfer capacitance Turn-on delay time Crss td(on) — — 25 8 — — pF ns tr 30 60 — — ns ns Drain to source breakdown voltage 2SK1402 2SK1402A Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current 2SK1402 2SK1402A Gate to source cutoff voltage Static drain to source on 2SK1402 state resistance 2SK1402A Forward transfer admittance Rise time Turn-off delay time td(off) — — Fall time Body to drain diode forward voltage tf VDF — — 35 0.9 — — ns V trr — 300 — ns Body to drain diode reverse recovery time Note: 3. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 6 Test conditions 3 ID = 2 A, VGS = 10 V, RL = 15 Ω IF = 4 A, VGS = 0 IF = 4 A, VGS = 0, diF/dt = 100 A/µs 2SK1402, 2SK1402A Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 50 30 ea ar ) (o n DS O is per lim at ite ion d in by th R is s n (T = 25 °C ) 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Typical Transfer Characteristics Typical Output Characteristics 5 5 10 V 6V 5V VDS = 20 V Pulse Test Pulse Test 4 Drain Current ID (A) Drain Current ID (A) m e) ls pu ot sh Case Temperature TC (°C) tio (1 1 150 1 s 100 ra 2SK1402 2SK1402A 0.05 50 pe Ta = 25°C 0.1 0 µs O C 0.3 µs C m 1 D 10 Drain Current ID (A) 10 0 3 = 20 10 40 10 PW Channel Dissipation Pch (W) 60 4.5 V 3 2 4V 1 4 3 2 TC = –25°C 25°C 75°C 1 VGS = 3.5 V 0 10 20 30 40 50 0 Drain to Source Saturation Voltage vs. Gate to Source Voltage 20 Pulse Test 16 ID = 5 A 12 8 2A 4 1A 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Rev.2.00 Sep 07, 2005 page 3 of 6 6 8 10 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance RDS (on) (Ω) Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Voltage VDS (V) 4 2 Static Drain to Source on State Resistance vs. Drain Current 50 Pulse Test 20 10 VGS = 10 V 5 15 V 2 1 0.5 0.2 0.5 1 2 5 10 Drain Current ID (A) 20 2SK1402, 2SK1402A Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) Static Drain to Source on State Resistance RDS (on) (Ω) Static Drain to Source on State Resistance vs. Temperature 10 VGS = 10 V Pulse Test 8 ID = 5 A 6 2A 4 1A 2 0 –40 40 0 80 120 160 TC = –25°C 25°C 75°C 5 2 1 0.5 0.2 0.1 0.05 0.5 0.2 0.1 1 2 5 Drain Current ID (A) Body to Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 1,000 Ciss Capacitance C (pF) 500 200 100 50 di/dt = 100 A/µs, VGS = 0 Ta = 25°C 20 10 0.05 0.1 0.5 0.2 1 2 Crss 10 30 20 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 500 16 600 12 VGS VDS 8 ID = 4 A VDD = 400 V 250 V 100 V 200 4 0 8 16 24 32 Gate Charge Qg (nc) Rev.2.00 Sep 07, 2005 page 4 of 6 0 40 VGS = 10 V, PW .= 2 µs duty < = 1%, VDD =. 30 V Switching Time t (ns) VDD = 100 V 250 V 400 V 0 10 0 0 5 20 400 Coss Reverse Drain Current IDR (A) 1,000 800 100 VGS = 0 f = 1 MHz Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) VDS = 20 V Pulse Test Case Temperature TC (°C) 1,000 Drain to Source Voltage VDS (V) 10 200 100 td (off) 50 tf 20 tr td (on) 10 5 0.1 0.2 0.5 1 2 5 Reverse Drain Current ID (A) 10 2SK1402, 2SK1402A Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current IDR (A) 5 Pulse Test 4 3 2 1 5 V, 10 V 0 0.4 VGS = 0, –5 V 0.8 1.2 1.6 2.0 Normalized Transient Thermal Impedance γS (t) Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 TC = 25°C D=1 0.5 0.3 0.1 0.2 θch–c (t) = γS (t) • θch–c θch–c = 2.50°C/W, TC = 25°C 0.1 0.05 PDM 0.02 0.03 e ls 1 0.0 t Pu o h 1S 0.01 10 µ T 100 µ 1m 10 m 100 m D = PW T PW 1 10 Pulse Width PW (S) Waveforms Switching Time Test Circuit Vin Monitor 90% Vout Monitor Vin D.U.T. RL Vout Vin 10 V 50 Ω VDD = 30 V 10% 90% td (on) Rev.2.00 Sep 07, 2005 page 5 of 6 10% tr 10% 90% td (off) tf 2SK1402, 2SK1402A Package Dimensions JEITA Package Code RENESAS Code Package Name MASS[Typ.] SC-46 PRSS0004AC-A TO-220AB / TO-220ABV 1.8g Unit: mm 2.79 ± 0.2 11.5 Max 10.16 ± 0.2 9.5 φ 3.6 1.26 ± 0.15 15.0 ± 0.3 18.5 ± 0.5 1.27 6.4 +0.2 –0.1 8.0 4.44 ± 0.2 +0.1 –0.08 7.8 ± 0.5 0.76 ± 0.1 14.0 ± 0.5 2.7 Max 1.5 Max 0.5 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 Ordering Information Part Name 2SK1402-E 2SK1402A-E Quantity 500 pcs 500 pcs Shipping Container Box (Sack) Box (Sack) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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