Jeiizutj ^>£.mi-L,onaiLctoi L/^ro ducts., One. C' 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 NPIM SILICON POWER TRANSISTOR USA DESCRIPTION The 2SC2333 is NPN silicon triple diffused transistor designed for PACKAGE DIMENSIONS switching regulator, DC-DC converter and ultrasonic appliance ap- in millimeters (inches) plications, FEATURES • High speed switching. „ 10.7 MAX. 0 5 (0.421 MAX.), • Low collector saturation voltage. 36i()2 «££„, (f 0.142) '-1.3*0.2 (0.051) • Specified of reverse biased SOA with inductive loads. ABSOLUTE MAXIMUM RATINGS Maximum Temperatures Storage Temperature -55 to +150 °C Junction Temperature 150 °C Maximum -4-_28 ^T^(Oll) Maximum Power Dissipation (Tc =25 °C) Total Power Dissipation 15 W Maximum Voltages and Currents (Ta =25 °C) VCBO Collector to Base Voltage 500 V Collector to Emitter Voltage 400 V Emitter to Base Voltage 7.0 V 'c(DCI Collector Current (DC) 2.0 A 'c(pulse) Collector Current (pulse)* 4.0 A 'B(DC) Base Current (DC) 1.0 A 1. Base (B) 2. 3. 4. Collector (C) Emitter IE) Fin (Collector) JEDEC: TO-220AB * PW « 350 MS, Duty Cycle -i 10 % ELECTRICAL CHARACTERISTICS (Ta = 25 °C) MAX, UNIT Turn On Time 1.0 MS Storage Time 2.5 1.0 80 SYMBOL WIN. CHARACTERISTIC «on *stg Fall Time DC Current Gain** 20 DC Current Gain** 10 v CE(sat) Collector Saturation Voltage** v BE(sat) Base Saturation Voltage** VCEO(SUS) Collector to Emitter Sustaining Voltage 400 VCEXISUSH Collector to Emitter Sustaining Voltage 450 VCEX(SUS)2 Collector to Emitter Sustaining Voltage 400 IC8O ICER Collector Cutoff Current Collector Cutoff Current ICEX1 'CEX2 TYP. 1.0 1.2 TEST CONDITIONS IC-0.5 A. lgi =-l B 2 = 0.1 A = RL soo n, VCG=150 v See Test Circuit. VCE = 5.0 V, lc = 0.1 A VCE = 5.0 V, IC = 0.5A V V V Collector Cutoff Current 10 1.0 10 MA mA MA Collector Cutoff Current 1.0 mA Emitter Cutoff Current 10 MA IC = 0.5 A, IB = 0.1 A, L= 1 mH lc = 0.5 A, IB1 = — I[32 = 0.1 A, T a = 125 °C, L = 180 MH, Clamped IC= 1.0 A, IB] =0.2 A,-I B 2 = 0.2 A, T a =125°C. L= 180 MH, Clamped E = 51 n,T a =125°C 400V,V BE (OFF) = -5.0 V 400V.V BE(OFF ) = -5.0 V, Ta = 125°C V E B =5.0V, IC **Pulse Test : PW a 350 ^s. Duty Cycle S 2 %/Pulsed Classification of hFE1 Rank M L K Range 20 to 40 30 to 60 40 to 80 Test Conditions : = 5.0 V, IQ^ 0.1 A NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors TYPICAL CHARACTERISTICS (Ta = 25 °C) DERATING CURVE OF SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE REVERSE BIAS SAFE OPERATING A R E A 1.0 Ib \ 12.5 s \ 10 sS 7.5 5 t 0 *9 - 04 $ \0 2.5 06 100 o 150 fn m" X * c CA o °'2 JL 50 100 150 100 T c — Case Temperature - °C Tc-Case Temperature-°C 300 400 500 Vc£--Collector to Emitter Voltage V COLLECTOR CURRENT us. COLLECTOR TO EMITTER VOLTAGE TRANSIENT THERMAL RESISTANCE FORWARD BIAS SAFE OPERATING AREA 200 i.or E S (J o: "m S 0.8 0.6 °-4 O O 2 5 10 20 0.5 50 100 200 500 2 5 10 20 50 100 0 1 2 3 4 5 VCE-"Collector to Emitter Voltage~V TURN ON TIME, STORAGE TIME AND 1 FALL TIME us. COLLECTOR CURRENT Sj> DC CURRENT GAIN us. COLLECTOR CURRENT > BASE AND COLLECTOR SATU RATION VOLTAGE us. COLLECTOR CURRENT 10 5 - • • VCE - s 1 1 PW-Pulse Width—rns VCE ~ Collector to Emitter Voltage- V 0.2 Pulsed 2 100 1 50 0.5 20 •M • S 5!!! •-•• v • • > i 5= 10 ^, s^ :: i ^^ -tl v» i 5 g£_C 0.02 0.01 2 1 0.2 0.1 g°i P in • 2 5 10 20 50 100200 5001000 1C- Collector Current -- mA 10 20 50 100 200 500 1000 1C Collector Current-mA 1.02.0 5.0 10 20 5O 100200 5001000 1C-Collector Current - mA