tJ zSsmi-Conauatoi ZPioaucti, Una. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N5096 HIGH VOLTAGE PNP TRANSISTOR 1 5s- 11 SEATINQ PLJWE FEATURES • LOW SATURATION VOLTAGE • LOW LEAKAGE AT HIGH TEMPERATURE • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS TO-5 Underside View PIN 1 - Emitter PIN 2 - Base PIN 3 - Collector ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCER Collector-Base Voltage (RBE = 1 K ) 500V VCEO Collector-Emitter Voltage (IB = 0V) 450V VCBO Collector Base Voltage (IE = 0V) lc IB Collector Current 500V 1A Base Current 0.5A Ptot Total Dissipation @ Tamb = 25°C 2W Derate Above 100°C TJ Operating And Storage Junction Temperature 20mW/°C -65 to 200°C NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions Min. Typ. Max. BVcEO* Collector Emitter Breakdown Voltage lc=50mA ^VCER* Collector Emitter Breakdown Voltage ic=ioouA BVcBO Collector Base Breakdown Voltage lc=100uA BVEBO Emitter Base Breakdown Voltage lE=20uA ICBO Collector Cutoff Current VCB=500V 500 IEBO Emitter Cutoff Current VEB=4V 250 hpE* DC Current Gain lc=1mA VCE=10V 20 200 lc=25mA VCE=10V 40 250 lc=100mA VCE=15V 20 200 Collector Emitter Saturation Voltage lc=25mA !B=2.5mA 3.0 VBE(SAT)* Base Emitter Saturation Voltage lc=25mA !B=2.5mA 1.0 fj Current Gain Bandwidth Product lc=10mA V CE =20V VCE(SAT)* Unit 450 RBE = IK 500 V 500 6 f=5MHz nA V MHz 20 SWITCHING TIMES (Tcase = 25°C unless otherwise stated) Parameter t<j Delay Time tr Rise Time ts Storage Time tf Fall Time Test Conditions VCC=150V lc=100mA lB1=lB2=10mA Min. Typ. Max. 700 1500 3 200 Unit ns MS ns