2SA698 - New Jersey Semiconductor

ioaucti, Line.
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2SA698
Silicon PNP Transistors
99MAX
3.20 ± 0.2
^ Features
DWith TO-202 package
• Absolute Maximum Ratings Tc=25
RATING
UNIT
VCBO
Collector to base voltage
130
V
VCEO
Collector to emitter voltage
130
V
VEBO
Emitter to base voltage
5.0
V
SYMBOL
PARAMETER
IB
Base current
Ic
Collector current
PC
Collector power dissipation
T]
Tstg
-Ik
0.5
2.54 r—W25.4
0.8
A
7
W
Junction temperature
150
D
Storage temperature
-55-150
D
TO-202
Electrical Characteristics Tc=25
CONDITIONS
VCB=120V; |E=0
ICEO
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter cut-off current
VCBO
Collector-base breakdown voltage
|c=1mA; IE=0
130
V
Vceo
Collector-emitter voltage
lc=10mA; !B=O
130
V
VEBO
Emitter-base breakdown voltage
SYMBOL
ICBO
IEBO
VcE(S3t-1)
Collector-emitter saturation voltages
VcE(sat-2)
Collector-emitter saturation voltages
hFE-1
Forward current transfer ratio
hFE-2
Forward current transfer ratio
VeE(sat)1
Base-emitter saturation voltages
VBE(sat)2
Base-emitter saturation voltages
VBE(sat)3
Base-emitter saturation voltages
fr
Transition frepuency at f=1 MHz
MIN
VEB=5V; lc=0
VCE=120V; IE=0
lc=0.5A; IB=0.05A
IC=0.2A; VCE=5V
TYPE
MAX
1
UNIT
uA
100
uA
100
uA
1.0
60
V
200
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to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
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