J.£ii£ut/ ^zmi-L-onauctoi L/^ioauati, Line. CX 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227*6005 FAX: (973) 376-8960 Silicon PNP Power Transistor 2SB1642 DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEO= -60V(Min) • Collector Power Dissipation- 1 : Pc= 25 W@ Tc= 25'C • Low Collector Saturation Voltage: VCE(satf -1.5V(Max)@ (lc= -2.5A, IB= -0.25A) ?W 2 < 3 P,N 1.BASE 2. COLLECTOR 3.BWITTER APPLICATIONS TO-220F package 1 2 3 • Designed for audio frequency power amplifier applications. B ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL VCBO PARAMETER Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO VALUE UNIT -60 V -60 V Emitter-Base Voltage -7 V Collector Current-Continuous -4 A - - C- r^'T7;i9 •* 'r '(••*•:' • ] i. •—,— U - . •• . '-:' j! ' I A i | ^_^-.J . H -RK - - D - N - J -- mm Ic IB Base Current-Continuous -1 Collector Power Dissipation @Ta=25"C 2 A W PC DIM WIN MAX A B C D F H J K 14.95 10.00 4.40 0.75 3.10 3.70 0.50 13.4 1.10 5.00 2.70 2.20 2.65 6.40 15.05 10.10 4.60 0.80 3.30 3.90 0.70 13.6 1.30 5.20 2.90 2.40 2.85 6.60 Collector Power Dissipation @Tc=25°C 25 Tj Junction Temperature 150 °C q Tstg Storage Temperature -55-150 •c s u L N R NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time ofgoing to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Silicon PNP Power Transistor 2SB1642 ELECTRICAL CHARACTERISTICS Tj=25'C unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage l c =-10mA;l B =0 VcE(sat) Collector-Emitter Saturation Voltage lc= -2.5A; IB= -0.25A -1.5 V VBE(OH) Base-Emitter On Voltage lc= -0.5A ; VCE= -5V -1.0 V ICBO Collector Cutoff Current Vcs= -60V ; IE= 0 -10 nA IEBO Emitter Cutoff Current VEB= -7V; lc= 0 -10 viA hpE-1 DC Current Gain lc= -0.5A ; VCE= -5V 100 hFE-2 DC Current Gain lc=-3A;VCE=-5V 20 COB Output Capacitance lE=0;VcB=-10V;ftest=1MHz 50 PF Current-Gain— Bandwidth Product lc= -0.5A ; VCE= -5V 9 MHz fr -60 V 320