'j£ti£iJ ^zmi-Conductoi Lpioduati, One. U C/ TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Silicon PNP Power Transistor 2SB1477 • -^ DESCRIPTION ^ • Collector-Emitter Breakdown Voltage: V(BR)CEo=-100V(Min.) : j , j 3 PIN 1.BASE 2. COLLECT OR ft 1 I • Wide Area of Safe Operation 3. BETTER 1 2 3 • Complement to Type 2SD2236 TO-247 package f\ *• C •*••--• <"• APPLICATIONS • Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT i > 0 * Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO -100 V -100 V Emitter-Base Voltage -5 V Ic Collector Current-Continuous -5 A PC Collector Power Dissipation @ TC=25'C 60 W Tj Junction Temperature 150 •c -55-150 r Tstg Storage Temperature Range ' fc ' ' i '• ' i • > i i ; ;i '• ; • ' I !l - M ' •iJ J! :|J K VCBO ; t : : ' • ! i ! i ' —.. • i ^L. i ^ ^— : ' i **•' ! '•* h • !!v •* ^ ii ^ V iJ » ' mm DIM A B C D E F G H J K P Q U V MINI 19.80 15.40 4.90 0.90 1.40 1.90 10.80 2.40 0.50 19.50 3.90 3.30 5.20 2JO MAX 20.20 15.80 5.10 1.10 1.60 2.10 11.00 2.60 0.70 20.50 4.10 3.50 5.40 3.10 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors Silicon PNP Power Transistor 2SB1477 ELECTRICAL CHARACTERISTICS Tc=25'C unless otherwise specified CONDITIONS MIN TYP. MAX UNIT SYMBOL PARAMETER V(BR)CEO Collector-Emitter Beakdown Voltage lc=-10mA; IB= 0 100 V V(BR)CBO Collector-Base Beakdown Voltage lc= -50 u A; IE=0 100 V V(BR)EBO Emitter-Base Beakdown Voltage IE=-50 u A; lc=0 5 V VcE(sat) Collector-Emitter Saturation Voltage |c= -3A; |B= -0.3A -1.5 V VBE(sat) Base-Emitter Saturation Voltage lc= -3A; IB= -0.3A -2.0 V IGBO Collector Cutoff Current VcB=-100V;l E =0 -10 uA IEBO Emitter Cutoff Current VEB= -5V; lc= 0 -10 uA hFE DC Current Gain lc=-1A;V C E=-5V Classifications D E F 60-120 100-200 160-320 60 320