, One.. J cs TELEPHONE: (973) 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 2SB1495 Silicon PNP Darlington Power Transistor us A DESCRIPTION • High DC Current Gain- "2 : hFE= 2000(Min)@ (VCE= -2V, lc= -2A) • Low-Collector Saturation Voltage: VCE(satr -1.5V(Max.)@lc= -1.5A • Complement to Type 2SD2257 f ™ R' hs ~T~ R2 1 •1 J PIN 1.BA3E 2. COLLECTOR 3. EMITTER APPLICATIONS 1 2 3 TO-220F package • Designed for high power switching applications. B • C -S- ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL PARAMETER VALUE t UNIT 0 F 0 o° ° •*- 0 It1 " ' " / " : . • VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V V£BO Emitter-Base Voltage -8 V Collector Current-Continuous -3 A Collector Current-Pulse -5 A •: Ic I CM Base Current-Continuous IB Collector Power Dissipation @Ta=25'C -0.3 A 2 W PC Collector Power Dissipation @TC=25'C 20 Tj Junction Temperature 150 'C Tstg Storage Temperature -55-150 'C - -D - N • v \'^}'\ -.„'.'; * • ; 1 L--N:: ^ ~""r ' o ,~; oi* < i t * t - R - IA ' I * -T-H~-y-|- , . , . \\. J -- mm DIM WIN MAX A 14.95 15.05 B 10.00 10.10 C 4.40 4.60 D 0.75 0.80 3.10 3.30 F 3.70 3.90 H J 0.50 0.70 K 13.4 13.6 1.10 1.30 L 5.00 5.20 N 2.70 2.90 Q R 2.20 2.40 2.65 2.85 S 6.40 6.60 U NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors : Silicon PNP Darlington Power Transistor 2SB1495 ELECTRICAL CHARACTERISTICS Tj=25°C unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage lc=-10mA;l s =0 VcE(sat) Collector-Emitter Saturation Voltage I C =-1.5A;I B = -1.5mA -1.5 V VeE(sat) Base-Emitter Saturation Voltage I C =-1.5A;I B = -1.5mA -2.0 V ICBO Collector Cutoff Current VCS=-100V; I E =0 -10 uA IEBO Emitter Cutoff Current VEB= -8V; lc= 0 -4.0 mA hpE-1 DC Current Gain | C =_1A;V C E=-2V 2000 hpE-2 DC Current Gain lc= -2A; VOE= -2V 2000 CONDITIONS MIN TYP. MAX -100 UNIT V Switching Times ton Turn-on Time tstg Storage Time tf Fall Time lc=-1.5A,lBi=-lB2= -1.5mA, VCc= -30V; RL= 20 0 0.5 V- S 1.0 us 0.4 us