NJSEMI 2SB1495

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TELEPHONE: (973) 376-2922
(212)227-6005
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
2SB1495
Silicon PNP Darlington Power Transistor
us A
DESCRIPTION
• High DC Current Gain-
"2
: hFE= 2000(Min)@ (VCE= -2V, lc= -2A)
• Low-Collector Saturation Voltage: VCE(satr -1.5V(Max.)@lc= -1.5A
• Complement to Type 2SD2257
f
™
R'
hs ~T~
R2
1
•1 J
PIN 1.BA3E
2. COLLECTOR
3. EMITTER
APPLICATIONS
1 2 3
TO-220F package
• Designed for high power switching applications.
B
• C -S-
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
t
UNIT
0
F 0
o° °
•*- 0
It1 " ' " / " : . •
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
V£BO
Emitter-Base Voltage
-8
V
Collector Current-Continuous
-3
A
Collector Current-Pulse
-5
A
•:
Ic
I CM
Base Current-Continuous
IB
Collector Power Dissipation
@Ta=25'C
-0.3
A
2
W
PC
Collector Power Dissipation
@TC=25'C
20
Tj
Junction Temperature
150
'C
Tstg
Storage Temperature
-55-150
'C
- -D
- N •
v
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-.„'.';
*
•
;
1
L--N::
^
~""r ' o ,~; oi*
<
i
t
*
t
- R -
IA
'
I
* -T-H~-y-|-
, . , . \\.
J --
mm
DIM
WIN
MAX
A 14.95 15.05
B 10.00 10.10
C
4.40
4.60
D
0.75
0.80
3.10
3.30
F
3.70
3.90
H
J
0.50
0.70
K
13.4
13.6
1.10
1.30
L
5.00
5.20
N
2.70
2.90
Q
R
2.20
2.40
2.65
2.85
S
6.40
6.60
U
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
:
Silicon PNP Darlington Power Transistor
2SB1495
ELECTRICAL CHARACTERISTICS
Tj=25°C unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-Emitter Breakdown Voltage
lc=-10mA;l s =0
VcE(sat)
Collector-Emitter Saturation Voltage
I C =-1.5A;I B = -1.5mA
-1.5
V
VeE(sat)
Base-Emitter Saturation Voltage
I C =-1.5A;I B = -1.5mA
-2.0
V
ICBO
Collector Cutoff Current
VCS=-100V; I E =0
-10
uA
IEBO
Emitter Cutoff Current
VEB= -8V; lc= 0
-4.0
mA
hpE-1
DC Current Gain
| C =_1A;V C E=-2V
2000
hpE-2
DC Current Gain
lc= -2A; VOE= -2V
2000
CONDITIONS
MIN
TYP.
MAX
-100
UNIT
V
Switching Times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc=-1.5A,lBi=-lB2= -1.5mA,
VCc= -30V; RL= 20 0
0.5
V- S
1.0
us
0.4
us