ucti, iJnc. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2SB1566 Silicon PNP Power Transistor 1^ DESCRIPTION • Collector-Emitter Breakdown Voltage: V(BR)CEo= -50V(Min) • Low Collector Saturation Voltage- III : VCE(sa.)= -1 .OV(Max)@ (|c= -2A, IB= -0.2A) • Wide Area of Safe Operation PIN 1. BASE ff I 2. COLLECTOR I i J 3.BU1ITTER 2 3 • Complement to Type 2SD2395 *r APPLICATIONS TO-22QFa package B—». _^. $ .*— 3~— fF w, • Designed for power amplifications. >I • o ABSOLUTE MAXIMUM RATINGS(Ta=25°C) SYMBOL PARAMETER VALUE UNIT -60 V i j O : r~nH , i > t ,i .i I 1 VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage -50 V -5 V ii i '' •. 1 J L - * R '«~ ^ Ic ICM Collector Current-Continuous Collector Current-Peak Collector Power Dissipation @Ta=25r -3 A -4.5 A G (-1 2 W PC mm DIM A B C D F Collector Power Dissipation @TC=25'C 25 Tj Junction Temperature 150 •c Tstg Storage Temperature -55-150 'C J K L N O R S LI tf WIN MAX 1635 9.90 4.35 0.75 3.20 6.90 3.70 0.45 13.35 1.10 4.9S 4^5 2.95 2.70 1.75 1.30 17.15 10.10 4.65 0.80 3.40 7.10 3.90 0.75 13.65 1.30 5.18 5.15 3^5 2.90 2.05 1.50 NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders. Quality Semi-Conductors 2SB1566 Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25'C unless otherwise specified PARAMETER V(BR)CEO Collector-Emitter Breakdown Voltage lc= -1mA; !B= 0 -50 V V(BR)CBO Collector-Base Breakdown Voltage lc= -50 v- A; IE= 0 -60 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -50 11 A; lc= 0 -7 V VcE(sat) Collector-Emitter Saturation Voltage lc= -2A; IB= -0.2A -1.0 V VBE(sat) Base-Emitter Saturation Voltage IG= -2A; IB= -0.2A -1.5 V ICBO Collector Cutoff Current VCB= -60V; IE= 0 -10 uA IEBO Emitter Cutoff Current VEB= -7V; lc= 0 -10 uA hpE DC Current Gain lc= -0.5A; VCE= -3V fi Current-Gain— Bandwidth Product lc= -0.5A;VCE= -5V; f,est= 5MHz 60 MHz Collector Output Capacitance lE=0;V C E=-10V;ftest=1MHz 40 PF COB • HFE Classifications E F 100-200 160-320 CONDITIONS TYP. SYMBOL MIN 100 MAX UNIT 320