High-reliability discrete products and engineering services since 1977 2N6236-2N6241 SILICON CONTROLLED RECTIFIERS FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Repetitive peak forward and reverse blocking voltage (1) (1/2 sine wave, RGK = 1000Ω, T C = -40 to +110°C) 2N6236 2N6237 2N6238 2N6239 2N6240 2N6241 Symbol VDRM VRRM Value 30 50 100 200 400 600 Unit Volts Non-repetitive peak reverse blocking voltage (1/2 sine wave, RGK = 1000Ω, T C = -40 to +110°C) 2N6236 2N6237 2N6238 2N6239 2N6240 2N6241 VRSM Average on-state current (TC = -40 to +90°C) (TC = 100°C) IT(AV) 2.6 1.6 Amps Surge on-state current (1/2 sine wave, 60Hz, TC = 90°C) (1/2 sine wave, 1.5ms, TC = 90°C) ITSM 25 35 Amps Circuit fusing (TC = -40 to +110°C, t = 8.3ms) I2t 2.6 A2s Peak gate power (pulse width = 10µs, TC = 90°C) PGM 0.5 Watts Average gate power (t = 8.3ms, TC = 90°C) 50 100 150 250 450 650 Volts PG(AV) 0.1 Watts Peak forward gate current IGM 0.2 Amps Peak reverse gate voltage VRGM 6 Volts Operating junction temperature range TJ -40 to 110 °C Storage temperature range Tstg -40 to 150 °C 6 In. lb. Stud torque Note 1: Ratings apply for zero or negative gate voltage. Devices shall not have a positive bias applied to the gate concurrently with a negative potential on the anode. Devices should not be tested with a constant source for forward or reverse blocking capability such that the voltage applied exceeds the rated blocking voltage. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal resistance, junction to case RӨJC 3 °C/W Thermal resistance, junction to ambient RӨJA 75 °C/W Rev. 20130128 High-reliability discrete products and engineering services since 1977 2N6236-2N6241 SILICON CONTROLLED RECTIFIERS ELECTRICAL CHARACTERISTICS (TC = 25°C, RGK = 1000Ω unless otherwise noted) Characteristic Peak forward or reverse blocking current (Rated VDRM or VRRM) TC = 25°C TC = 110°C Peak forward “on” voltage (ITM = 8.2A peak, pulse width = 1 to 2ms, 2% duty cycle) Symbol Min Typ Max Unit IDRM, IRRM - - 10 200 µA - - 2.2 - - 200 500 - - 1 0.2 - - VTM Gate trigger current (continuous dc) (VAK = 12Vdc, RL = 24Ω) (VAK = 12Vdc, RL = 24Ω, T C = -40°C) IGT Gate trigger voltage (continuous dc) (Source voltage = 12V, RS = 50Ω) (VAK = 12Vdc, RL = 24Ω, T C = -40°C) VGT Gate non-trigger voltage (VAK = rated VDRM, RL = 100Ω, TC = 110°C) VGD Holding current (VAK = 12Vdc, IGT = 2mA) (initiating on state current = 200mA) TC = 25°C TC = -40°C IH Total turn-on time (Source voltage = 12V, RS = 6kΩ) (ITM = 8.2A, IGT = 2mA, rated VDRM) (Rise time = 20ns, pulse width = 10µs) tgt Forward voltage application rate (VD = Rated VDRM, TC = 110°C) Volts µA Volts Volts mA - - 5 10 - - 2 - 10 - µs dv/dt V/µs Rev. 20130128 High-reliability discrete products and engineering services since 1977 2N6236-2N6241 SILICON CONTROLLED RECTIFIERS MECHANICAL CHARACTERISTICS Case: TO-126 Marking: Body painted, alpha-numeric Pin out: See below Rev. 20130128 High-reliability discrete products and engineering services since 1977 2N6236-2N6241 SILICON CONTROLLED RECTIFIERS Rev. 20130128