IRF220, IRF221, IRF222, IRF223 Semiconductor 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.8Ω and 1.2Ω • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Majority Carrier Device Formerly developmental type TA09600. • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol Ordering Information PART NUMBER D PACKAGE BRAND IRF220 TO-204AA IRF220 IRF221 TO-204AA IRF221 IRF222 TO-204AA IRF222 IRF223 TO-204AA IRF223 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 199& 1 File Number 1567.2 IRF220, IRF221, IRF222, IRF223 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Voltage (Note 1) . . . . . . . . . . . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Rating. . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . Tpkg IRF220 200 200 5.0 3.0 20 ±20 40 0.32 85 -55 to 150 IRF221 150 150 5.0 3.0 20 ±20 40 0.32 85 -55 to 150 IRF222 200 200 4.0 2.5 16 ±20 40 0.32 85 -55 to 150 IRF223 150 150 4.0 2.5 16 ±20 40 0.32 85 -55 to 150 UNITS V V A A A V W W/oC mJ oC 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP IRF220, IRF222 200 - - V IRF221, IRF223 150 - - V 2.0 - 4.0 V VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC - - 250 µA IRF220, IRF221 5.0 - - A IRF222, IRF223 4.0 - - A - - ±100 nA IRF220, IRF221 - 0.5 0.8 Ω IRF222, IRF223 - 0.8 1.2 Ω 1.3 2.5 - S VDD = 0.5 x Rated BVDSS, ID ≈ 2.5A, RG = 50Ω For IRF220, 222 RL = 80Ω For IRF221, 223 RL = 60Ω (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature - 20 40 ns - 30 60 ns - 50 100 ns - 30 60 ns VGS = 10V, ID = 6.0A, VDS = 0.8 x Rated BVDSS Ig(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature - 11 15 nC - 5.0 - nC - 6.0 - nC Drain to Source Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) SYMBOL BVDSS VGS(TH) IDSS ID(ON) IGSS rDS(ON) gfs td(ON) tr td(OFF) tf Qg(TOT) Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd TEST CONDITIONS MAX UNITS ID = 250µA, VGS = 0V, (Figure 10) VDS = VGS, ID = 250µA VDS > ID(ON) x rDS(ON)MAX, VGS = 10V VGS = ±20V ID = 2.5A, VGS = 10V, (Figure 8) VDS > ID(ON) x rDS(ON)MAX, ID = 2.5A 2 IRF220, IRF221, IRF222, IRF223 Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS TYP MAX UNITS - 450 - pF Input Capacitance CISS Output Capacitance COSS - 150 - pF Reverse Transfer Capacitance CRSS - 40 - pF - 5.0 - nH - 12.5 - nH - - 3.12 oC/W - - 30 oC/W MIN TYP - - 5.0 A - - 4.0 A - - 20 A - - 16 A Internal Drain Inductance LD Internal Source Inductance LS VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) MIN Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Measured From the Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified MOSFET Symbol Showing the Internal Device Inductances D LD G LS S Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient RθJA Free Air Operation Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current SYMBOL ISD IRF220, IRF221 IRF222, IRF223 Pulse Source to Drain Current (Note 3) TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Rectifier D MAX UNITS G ISDM IRF220, IRF221 S IRF222, IRF223 Source to Drain Diode Voltage (Note 2) VSD IRF220, IRF221 TC = 25oC, ISD = 5.0A, VGS = 0V, (Figure 13) - - 2.0 V IRF222, IRF223 TC = 25oC, ISD = 4.0A, VGS = 0V, (Figure 13) - - 1.8 V trr TJ = 150oC, ISD = 5.0A, dISD/dt = 100A/µs - 350 - ns QRR TJ = 150oC, ISD = 5.0A, dISD/dt = 100A/µs - 2.3 - µC Reverse Recovery Time Reverse Recovery Charge NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 10V, starting TJ = 25oC, L = 6.18mH, RG = 50Ω, peak IAS = 5A. See Figures 15, 16. 3 IRF220, IRF221, IRF222, IRF223 Typical Performance Curves Unless Otherwise Specified 5 1.0 4 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 3 0 50 100 IRF222, IRF223 2 1 0.2 0 IRF220, IRF221 0 25 150 50 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE ZθJC, NORMALIZED TRANSIENT THERMAL IMPEDANCE 75 100 125 150 TC, CASE TEMPERATURE (oC) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 1.0 0.5 0.2 PDM 0.1 0.1 0.05 0.02 0.01 t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC x RθJC + TC SINGLE PULSE 0.01 10-5 10-4 10-3 10-2 10-1 10 1 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE 100 10 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) 10V VGS = 7V 10 IRF222, IRF223 100µs IRF220, IRF221 10µs IRF222, IRF223 DC 1.0 TC = 25oC TJ = MAX RATED 0.1 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) IRF220, IRF221 SINGLE PULSE 1.0 1ms IRF221 IRF223 10ms 100ms IRF220 IRF222 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) 8 80µs PULSE TEST VGS = 6V 6 4 VGS = 5V 2 VGS = 4V 0 1000 0 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 20 40 60 80 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. OUTPUT CHARACTERISTICS 4 100 IRF220, IRF221, IRF222, IRF223 Typical Performance Curves Unless Otherwise Specified (Continued) 10 5 10V 80µs PULSE TEST 80µs PULSE TEST VDS >ID(ON) x rDS(ON) MAX 6V VGS = 5V 3 2 1 8 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 8V 4 6 4 TJ = 125oC TJ = 25oC 2 4V TJ = -55oC 0 0 0 2 4 6 8 VDS, DRAIN TO SOURCE VOLTAGE (V) 10 0 2 4 6 8 VGS, GATE TO SOURCE VOLTAGE (V) FIGURE 6. SATURATION CHARACTERISTICS FIGURE 7. TRANSFER CHARACTERISTICS 2.2 1.0 VGS = 10V VGS = 20V 0.5 5 10 ID, DRAIN CURRENT (A) 15 1.4 1.0 0.6 0.2 20 VGS = 10V ID = 2A 1.8 ON RESISTANCE NORMALIZED DRAIN TO SOURCE rDS(ON), DRAIN TO SOURCE ON RESISTANCE (Ω) 1.5 0 0 10 -40 0 40 80 TJ, JUNCTION TEMPERATURE (oC) 120 NOTE: Heating effect of 2µs is minimal. FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT 1000 ID = 250µA 1.15 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 800 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.25 1.05 0.95 0.85 600 CISS 400 COSS 200 CRSS 0.75 -40 0 40 80 120 TJ, JUNCTION TEMPERATURE (oC) 0 160 FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V) 50 FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 5 IRF220, IRF221, IRF222, IRF223 Typical Performance Curves Unless Otherwise Specified (Continued) 2 5 ISD, SOURCE TO DRAIN CURRENT (A) TJ = -55oC 80µs PULSE TEST 4 TJ = 25oC 3 TJ = 125oC 2 1 0 100 TJ = 25oC TJ = 150oC 10 TJ = 150oC TJ = 25oC 1.0 0 2 4 6 ID, DRAIN CURRENT (A) 8 0 10 FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT 20 VGS, GATE TO SOURCE VOLTAGE (V) gfs, TRANSCONDUCTANCE (S) VDS > ID(ON) x rDS(ON)MAX 1 2 3 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE ID = 6.0A VDS = 40V 15 VDS = 100V VDS = 160V IRF220, IRF222 10 5 0 0 4 8 12 16 Qg(TOT), TOTAL GATE CHARGE (nC) 20 FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 6 4 IRF220, IRF221, IRF222, IRF223 Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN + RG REQUIRED PEAK IAS VDS IAS VDD VDD - VGS DUT tP 0V IAS 0 0.01Ω tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED INDUCTIVE WAVEFORMS tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 0 10% DUT 90% VGS VGS 0 FIGURE 17. SWITCHING TIME TEST CIRCUIT 0.2µF 10% FIGURE 18. RESISTIVE SWITCHING WAVEFORMS VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G Ig(REF) 50% PULSE WIDTH VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% 0 S 0 IG CURRENT SAMPLING RESISTOR IG(REF) VDS ID CURRENT SAMPLING RESISTOR 0 FIGURE 20. GATE CHARGE WAVEFORMS FIGURE 19. GATE CHARGE TEST CIRCUIT 7