^Pioducti, Una. TELEPHONE: (973) 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 IRF530 14A, 100V, 0.160 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Ordering Information PART NUMBER IRF530 • 14A, 100V ' rDS(ON) = 0 • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Symbol PACKAGE TO-220AB Features BRAND oD IRF530 Go NOTE: When ordering, use the entire part number. 6S Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN (FLANGE) NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to press. However. NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ Semi-Conductors encourages customers to verity that datasheets are current before placing orders. Quality Semi-Conductors IRF530 Absolute Maximum Ratings Tc = 25°C, Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1) Drain to Gate Voltage (RGs = 20kl3) (Note 1) Continuous Drain Current TC = 100°C Pulsed Drain Current (Note 3) Gate to Source Voltage Maximum Power Dissipation Dissipation Derating Factor Single Pulse Avalanche Energy Rating (Note 4) Operating and Storage Temperature Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s Package Body for 10s, See Techbrief 334 VDS VDGR ID ID IDM VG§ PD EAS Tj TSTG T|_ Tp^g IRF530 100 100 14 10 56 ±20 79 0.53 69 -55 to 175 UNITS V V A A A V W W/°C mJ °C °C °C 300 260 CAUTION: Stresses above those listed In "Absolute Maximum Ratings" may cause permanent damage to the device. This Is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: = 25°Cto150°C. Electrical Specifications Tc = 25°C, Unless Otherwise Specified PARAMETER Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current TEST CONDITIONS SYMBOL BVDSS VGS(TH) bss ID = 250uA VGS =ov (Figure 10) VGS = VDS. ID = 250uA VDS = 95V, VGS = ov VDS = 0-8 x Rated BVrjss. VGs = OV, Tj = 150°C On-State Drain Current (Note 2) Gate to Source Leakage Current Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) 'D(ON) !GSS rDS(ON) 9fs 'd(ON) tr Q9(TOT) Qgs Qgd Input Capacitance CISS Internal Drain Inductance ID = 8.3A, VGS = 10V (Figures 8, 9) VDS ^ 50V. !D =8 - 3A (Figure 12) VDD = 50V, ID = 14A, RG =1213, RL = 3.413 MOSFET Switching Times are Essentially Independent of Operating 1 emperature Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient LS V 2 - 4,0 V - - 25 MA MA - - 250 14 - - A - - ±500 nA £3 - 0.14 0.16 5.1 7.6 - S - 12 15 ns - 35 65 ns - 25 70 ns ns nC 25 59 18 30 - 4 - - 7 - VDS = 25V. VGS = OV, f = 1 MHz (Figure 1 1 ) - 600 - - 250 - 50 - - Measured from the Contact Screw on Tab To Center of Die Modified MOSFET Symbol Showing the Internal Devices Inductances Measured from the Source Lead, 6mm (0.25in) From Header to Source Bonding Pad R8JC R6JA UNITS - - Measured from the Drain Lead, 6mm (0.25in) from Package to Center of Die Internal Source Inductance MAX - - CQSS CRSS LD TYP 100 VGS = 10V, ID = 14A, VDS= 0.8 x Rated BVDSS Ig(REF) = 1.5mA (Figure 14 ) Gate Charge is Essentially ndependent of Operating Temperature tf Gate to Source Charge Reverse Transfer Capacitance * b(ON) x rDS(ON) MAX. VGs = 10V VGS = ±2ov ld(OFF) Gate to Drain "Miller" Charge Output Capacitance VDS WIN Free Air Operation nC nC PF PF PF 3.5 nH 4.5 nH 7.5 nH - - 1.9 °C/W - - 62.5 °C/W ~ " " - IRF530 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current ISD Pulse Source to Drain Current (Note 2) !SDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode > D Jfc G o U1 i i Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge MIN TYP MAX - - 14 A 56 A UNITS y^) ,s - - 2.5 V trr Tj = 25°C, ISD = 14A, dlSD/c|t = 100A/|is 5.5 120 250 ns QRR Tj = 25°C, ISD = 14A- d!SD/dt = 100A/U.S 0.17 0.6 1.3 uC VSD Tj = 25°C, ISD = 14A, VGS = 0V (Figure 13) NOTES: 2. Pulse test: pulse width < 300ns, duty cycle < 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 25V, starting Tj = 25°C, L = 530nH, RG = 25H, peak IAS = 14A (Figures 15, 16). Typical Performance Curves umess otherwise specified 1.2 a 1.0 i 0.8 G 0.6 0.4 0 25 50 75 100 125 150 175 50 Tc, CASE TEMPERATURE (°C) 75 100 125 150 175 Tc, CASE TEMPERATURE (°C) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE 10 tp, RECTANGULAR PULSE DURATION (s)