IRF320, IRF321, IRF322, IRF323 Semiconductor 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • Majority Carrier Device Formerly developmental type TA17404. • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol • rDS(ON) = 1.8Ω and 2.5Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics D Ordering Information PART NUMBER PACKAGE BRAND IRF320 TO-204AA IRF320 IRF321 TO-204AA IRF321 IRF322 TO-204AA IRF322 IRF323 TO-204AA IRF323 G S NOTE: When ordering, use the entire part number. Packaging JEDEC TO-204AA DRAIN (FLANGE) SOURCE (PIN 2) GATE (PIN 1) CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. Copyright © Harris Corporation 1998 5-1 File Number 1569.3 IRF320, IRF321, IRF322, IRF323 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1). . . . . . . . . .VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . VDGR Continuous Drain Current. . . . . . . . . . . . . . . . . . . . . . . . . . ID TC = 100oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . .VGS Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4) . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s . . . . . . . . . TL Package Body for 10s, See TB334 . . . . . . . . . . . . . . . Tpkg IRF320 400 400 3.3 2.1 13 ±20 50 0.4 190 -55 to 150 IRF321 350 350 3.3 2.1 13 ±20 50 0.4 190 -55 to 150 IRF322 400 400 2.8 1.8 11 ±20 50 0.4 190 -55 to 150 IRF323 350 350 2.8 1.8 11 ±20 50 0.4 190 -55 to 150 UNITS V V A A A V W W/oC mJ oC 300 260 300 260 300 260 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER MIN TYP MAX UNITS IRF320, IRF322 400 - - V IRF321, IRF323 350 - - V 2.0 - 4.0 V VDS = Rated BVDSS, VGS = 0V - - 25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V TJ = 125oC - - 250 µA 3.3 - - A 2.8 - - A ±100 nA Drain to Source Breakdown Voltage Gate to Threshold Voltage Zero Gate Voltage Drain Current On-State Drain Current (Note 2) SYMBOL BVDSS VGS(TH) IDSS ID(ON) IRF320, IRF321 TEST CONDITIONS ID = 250µA, VGS = 0V, (Figure 10) VGS = VDS, ID = 250µA VDS > ID(ON) x rDS(ON)MAX, VGS = 10V (Figure 7) IRF322, IRF323 Gate to Source Leakage Current Drain to Source On Resistance (Note 2) IGSS rDS(ON) VGS = ±20V ID = 1.8A, VGS = 10V, (Figures 8, 9) IRF320, IRF321 - 1.5 1.8 Ω IRF322, IRF323 - 1.8 2.5 Ω 1.7 2.7 - S - 10 15 ns - 14 20 ns - 30 45 ns - 13 20 ns - 12 20 nC - 4 - nC - 8 - nC Forward Transconductance (Note 2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge (Gate to Source + Gate to Drain) gfs td(ON) tr td(OFF) VDS ≥ 10V, ID = 2.0A, (Figure 12) VDD = 200V, ID ≈ 3.3A, RG = 18Ω, RL = 60Ω, VGS = 10V, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature tf Qg(TOT) Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd VGS = 10V, ID = 3.3A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independent of Operating Temperature 5-2 IRF320, IRF321, IRF322, IRF323 Electrical Specifications TC = 25oC, Unless Otherwise Specified (Continued) PARAMETER SYMBOL TEST CONDITIONS TYP MAX UNITS - 450 - pF Input Capacitance CISS Output Capacitance COSS - 100 - pF Reverse Transfer Capacitance CRSS - 20 - pF - 5.0 - nH - 12.5 - nH - - 2.5 oC/W - - 30 oC/W MIN TYP MAX UNITS - - 3.3 A - - 13 A - - 1.8 V Internal Drain Inductance Internal Source Inductance LD LS Thermal Resistance Junction to Case RθJC Thermal Resistance Junction to Ambient RθJA VDS = 25V, VGS = 0V, f = 1MHz (Figure 11) MIN Measured Between the Contact Screw on the Flange that is Closer to Source and Gate Pins and the Center of Die Measured from the Source Lead, 6mm (0.25in) From the Flange and the Source Bonding Pad Modified MOSFET Symbol Showing the Internal Devices Inductances D LD G LS S Free Air Operation Source to Drain Diode Specifications PARAMETER Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) SYMBOL ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode D G S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Recovery Charge VSD TC = 25oC, ISD = 3.3A, VGS = 0V, (Figure 13) trr TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/µs 120 270 600 ns QRR TJ = 25oC, ISD = 3.3A, dISD/dt = 100A/µs 0.64 1.4 3.0 µC NOTES: 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by Max junction temperature. See Transient Thermal Impedance curve (Figure 3). 4. VDD = 50V, starting TJ = 25oC, L = 31mH, RG = 25Ω, peak IAS = 3.3A. See Figures 15, 16. 5-3 IRF320, IRF321, IRF322, IRF323 Typical Performance Curves Unless Otherwise Specified POWER DISSIPATION MULTIPLIER 1.2 5 ID, DRAIN CURRENT (A) 1.0 0.8 0.6 0.4 3 IRF320, IRF321 2 IRF322, IRF323 1 0.2 0 4 0 0 50 100 150 25 50 TC, CASE TEMPERATURE (oC) 75 100 125 150 TC, CASE TEMPERATURE (oC) FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE TEMPERATURE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs CASE TEMPERATURE ZθJC, TRANSIENT THERMAL IMPEDANCE (oC/W) 10 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 0.02 0.01 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZθJC + TC SINGLE PULSE 0.01 10-5 t2 10-4 10-3 10-2 0.1 1 10 t1, RECTANGULAR PULSE DURATION (s) FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE 5 OPERATION IN THIS AREA IS LIMITED BY rDS(ON) IFR320, 1 10 10µs IRF322, 3 IFR320, 1 100µs IRF322, 3 1 1ms TC = 25oC TJ = MAX RATED SINGLE PULSE IRF320, 2 IRF321, 3 0.1 1 10V 80µs PULSE TEST 6.0V ID , DRAIN CURRENT (A) ID , DRAIN CURRENT (A) 100 4 3 5.5V 2 VGS = 5.0V 1 10ms DC 10 100 VDS , DRAIN TO SOURCE VOLTAGE (V) 0 1000 FIGURE 4. FORWARD BIAS SAFE OPERATING AREA 0 4.5V 4.0V 160 40 80 120 VDS , DRAIN TO SOURCE VOLTAGE (V) FIGURE 5. OUTPUT CHARACTERISTICS 5-4 200 IRF320, IRF321, IRF322, IRF323 Typical Performance Curves Unless Otherwise Specified (Continued) 10 10V 80µs PULSE TEST ID , DRAIN CURRENT (A) ID(ON) , ON-STATE DRAIN CURRENT (A) 5 6.0V 4 3 5.5V 2 VGS = 5.0V 1 4.5V 4.0V 0 0 3 6 9 12 VDS , DRAIN TO SOURCE VOLTAGE (V) VDS ≥ 50V 80µs PULSE TEST DUTY CYCLE ≤ 2% 1 0.1 0.01 15 0 6 8 10 3.0 NORMALIZED DRAIN TO SOURCE ON RESISTANCE rDS(ON) , DRAIN TO SOURCE ON RESISTANCE (Ω) 4 FIGURE 7. TRANSFER CHARACTERISTICS 10.0 8.0 6.0 VGS = 10V 4.0 VGS = 20V 2.0 ID = 3.3A VGS = 10V 2.4 1.8 1.2 0.6 0 -60 0 0 3 6 9 ID , DRAIN CURRENT (A) 12 15 FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT -40 -20 0 20 40 60 80 100 120 140 160 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 1000 ID = 250µA 1.15 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 2 VGS , GATE TO SOURCE VOLTAGE (V) FIGURE 6. SATURATION CHARACTERISTICS 1.25 25oC 150oC 1.05 0.95 0.85 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD 800 600 CISS 400 COSS 200 CRSS 0.75 -60 -40 -20 0 20 40 60 0 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (oC) 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE 5-5 IRF320, IRF321, IRF322, IRF323 Typical Performance Curves Unless Otherwise Specified (Continued) 5 ISD , SOURCE TO DRAIN CURRENT (A) 100 4 25oC 3 150oC 2 1 0 PULSE DURATION = 80µs 10 TJ = 150oC 1 TJ = 25oC 0.1 0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 VSD , SOURCE TO DRAIN VOLTAGE (V) ID, DRAIN CURRENT (A) FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT 20 VGS , GATE TO SOURCE VOLTAGE (V) gfs , TRANSCONDUCTANCE (S) PULSE DURATION = 80µs FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE ID = 3.3A VDS = 320V VDS = 200V VDS = 80V 16 12 8 4 0 0 4 8 12 16 20 Qg(TOT) , TOTAL GATE CHARGE (nC) FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE 5-6 2.0 IRF320, IRF321, IRF322, IRF323 Test Circuits and Waveforms VDS BVDSS L tP VARY tP TO OBTAIN + RG REQUIRED PEAK IAS VDS IAS VDD VDD - VGS DUT tP 0V IAS 0 0.01Ω tAV FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS tON tOFF td(ON) td(OFF) tf tr RL VDS 90% 90% + RG - VDD 10% 0 10% DUT 90% VGS VGS 0 FIGURE 17. SWITCHING TIME TEST CIRCUIT 0.2µF 50% PULSE WIDTH 10% FIGURE 18. RESISTIVE SWITCHING WAVEFORMS VDS (ISOLATED SUPPLY) CURRENT REGULATOR 12V BATTERY 50% VDD Qg(TOT) SAME TYPE AS DUT 50kΩ Qgd 0.3µF VGS Qgs D VDS DUT G 0 IG(REF) S 0 IG CURRENT SAMPLING RESISTOR VDS ID CURRENT SAMPLING RESISTOR IG(REF) 0 FIGURE 19. GATE CHARGE TEST CIRCUITS FIGURE 20. GATE CHARGE WAVEFORMS 5-7