3N165/3N166 - New Jersey Semiconductor

na.
TELEPHONE: (973) 378-2922
(212) 227-6005
FAX: (973) 3764960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
3N165/3N166
ABSOLUTE MAXIMUM RATINGS (Note 1)
(TA - 25°C unless otherwise specified)
Drain-Source or Drain-Gate Voltage (Note 2)
3N165
40V
3N166
30V
Transient Gate-Source Voltage (Note 3)
±125
Gate-Gate Voltage
±80V
Drain Current (Note 2)
50mA
Storage Temperature
-65°C to +200°C
Operating Temperature
-55°C to +150°C
Lead Temperature (Soldering, 10sec)
+300°C
Power Dissipation
One Side
300mW
Both Sides
525mW
Total Derating above 25°C
4.2mW/°C
NOTE: Stresses above those listed under "Absoluts Maximum
Ratings' may cause permanent damage to the device. These are
$nst ratings only and functional operation of the device at these or
any other conditions above those indicated in the operational sections
of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
BOTTOM VIEW
.100
.£«&.
ELECTRICAL CHARACTERISTICS (TA - 25°C and VBS - 0 unless otherwise specified)
SYMBOL
IQSSR
PARAMETER
MIN
MAX
UNITS
-10
IQSSF
-25
TEST CONDITIONS
VGS = 40V
10
Gate Reverse Leakage Current
VGS = -40V
pA
| TA = +125°C
loss
Drain to Source Leakage Current
-200
VDS = -20V
ISDS
Source to Drain Leakage Current
-400
VSD = -20V, VOB = 0
lD(on)
On Drain Current
-5
-30
mA
Vosilh)
Gate Source Threshold Voltage
-2
-5
v
Vosw
Gala Source Threshold Voltage
-2
-S
rns<on)
Drain Source ON Resistance
300
Vos = -15V, VGS = -10V
VDS- -15V, lD--10uA
VDS-VQS. lo--10uA
ohms
Vos - -20V, ID - -100uA
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without notice
Information I'umished by NJ Scmi-Conductors is believed to be both accurate and reliable at the time of going to press. However VI
Semi-Conductors .t>smncs no responsibility for any errors or omissions discovered in its use NJ .Semi-Conduttors encourages
customers to verify (hat datasheets are current before placing orders
ELECTRICAL CHARACTERISTICS (Continued) (TA - 25°C and VBS - 0 unless otherwise specified)
SYMBOL
PARAMETER
M1N
MAX
1500
3000
git
g°>
Output Admittance
300
Ci..
Input Capacitance
3.0
C«
Reverse Transfer Capacitance
0.7
CM.
Output Capacitance
RefYi.)
Common Source Forward Transconductance
Forward Transconductance
MATCHING CHARACTERISTICS
SYMBOL
UNITS
TEST CONDITIONS
ia
VDS = -15V, ID = -10mA, f = 1kHz
PF
VDS = -15V, ID = -10mA, f = 1MHz (Note 4)
US
VDS - -15V, ID = -10mA, f » 100MHz (Note 4)
3.0
1200
3N165
PARAMETER
MIN
MAX
0.90
1.0
UNITS
TEST CONDITIONS
YM/YW
Forward Transconductance Ratio
VOSLZ
Gate Source Threshold Voltage Differential
100
mV
VOS--15V. lD = -500(iA
AVosi-2
AT
Gale Source Threshold Voltage Differential
Change with Temperature
100
|iV/°C
VDS = -15V, lA--500uA
TA « -55°C to +25°C
NOTES: 1. See handling precautions,
2. Per transistor.
3. Devices must not be tested at ±125V more than once, nor longer than 300ms.
4. For design reference only, not 100% tested.
VDS = -1 5V, ID - -SOOuA, f = 1 kHz