Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N3740 2N3741 DESCRIPTION ・With TO-66 package ・Excellent safe area limits ・Low collector saturation voltage APPLICATIONS ・Suitable for use in as drivers,switches and medium-power amplifier and applications PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-66) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO 体 导 半 电 固 VCEO VEBO PARAMETER CONDITIONS D N O IC 2N3740 M E S E ANG Collector-base voltage INCH Open emitter 2N3741 2N3740 Collector-emitter voltage Emitter-base voltage R O T C U VALUE -60 Open collector V -80 -60 Open base 2N3741 UNIT V -80 -7 V IC Collector current -4 A ICM Collector current-Peak -10 A IB Base current -2 mA PT Total power dissipation 25 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~200 ℃ MAX UNIT 7.0 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N3740 2N3741 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO PARAMETER Collector-emitter breakdown voltage CONDITIONS MIN 2N3740 VBE ICEX ICEO IC=-100mA ; IB=0 V hFE-1 -80 IC=-1A ;IB=-125mA -0.6 V Base -emitter on voltage IC=-0.25A ; VCE=-1V -1.0 V 2N3740 VCE=-60V;VBE(off)=-1.5V VCE=-40V;VBE(off)=-1.5V;TC=150℃ -0.1 -1.0 2N3741 VCE=80V;VBE(off)=1.5V VCE=60V;VBE(off)=1.5V;TC=150℃ -0.1 -1.0 2N3740 VCE=-40V; IB=0 Collector cut-off current Collector cut-off current 体 导 半 固电 Collector cut-off current N A H C IN Emitter cut-off current 2N3740 mA VCE=-60V; IB=0 R O T C NDU VCB=-60V; IE=0 O IC M E S GE VCB=-80V; IE=0 VEB=-7V; IC=0 IC=-0.1A ; VCE=-1V 40 DC current gain IC=-0.25A ; VCE=-1V 30 hFE-3 DC current gain IC=-0.5A ; VCE=-1V 20 hFE-4 DC current gain IC=-1A ; VCE=-1V 10 fT Transition frequency IC=-0.1A ; VCE=-10V;f=1.0MHz 3.0 COB Output capacitance IE=0 ; VCB=-10V;f=100kHz hFE-2 DC current gain mA -1.0 2N3741 IEBO UNIT Collector-emitter saturation voltage 2N3741 ICBO MAX -60 2N3741 VCEsat TYP. 2 -0.1 mA -0.5 mA 100 MHz 100 pF Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N3740 2N3741 PACKAGE OUTLINE 体 导 半 固电 N A H C IN O R O T C NDU IC M E S GE Fig.2 Outline dimensions 3