tSzrni-C on ,O ne. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 BC140; BC141 NPN medium power transistors PINNING FEATURES • High current (max. 1 A) DESCRIPTION PIN • Low voltage (max. 60 V). 1 2 3 APPLICATIONS emitter base collector, connected to case • General purpose switching and amplification. DESCRIPTION NPN medium power transistor in a TO-39 metal package. PNP complements: BC160 and BC161. Fig.1 Simplified outline (TO-39) and symbol. QUICK REFERENCE DATA SYMBOL VCBO CONDITIONS PARAMETER collector-base voltage ICM BC141 collector-emitter voltage BC140 BC141 peak collector current Plot total power dissipation Tcase < 45 'C hFE DC current gain BC140-10;BC141-10 lc = 1 00 mA; VCE = 1 V BC140-16; BC141-16 fr transition frequency TYP. MAX. - - 80 V - - 100 V open base - - 40 V - - 60 V - - 1.5 A - - 3.7 W 63 100 160 100 160 250 - - lc = 50 mA; VCE = 1 0 V; f = 1 00 MHz 50 VI Semi-CondiKton reserve the right M change lest canditivm. parameter limits nnd package Jimenaiona without notice Information l"«mi«n«d by NJ Semi-Conductors a believed to he holh accurate and reliable .it the lirn* of going to press. However \ S<ini-C niiJutUirs .liMimcs no responsibility tor my errun nr tnnksion* Jisoivurtd in its use NJ Semi-Ci>iiihiili>r« vn IIMI rrers h>M.-fir\l i UNIT open emitter BC140 VCEO MIN. MHz NPN medium power transistors BC140; BC141 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VCBO VCEO BC140 BC141 collector-emitter voltage BC140 BC141 open base VEBO emitter-base voltage Ic collector current (DC) I CM peak collector current IBM peak base current Plot total power dissipation Tstg storage temperature Tj junction temperature Tamb operating ambient temperature MAX. MIN. CONDITIONS collector-base voltage UNIT open emitter - 80 100 V V - 40 60 open collector - Tease < 45 ' C -65 -65 7 1 1.5 200 3.7 +150 175 +150 V V V A A mA W "C C 'C THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient Rthj-c thermal resistance from junction to case CONDITIONS in free air VALUE UNIT 200 35 K/W K/W