^e-mi-Conductoi ^Pi
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2N4867, 2N4867A, 2N4868, 2N4868A, 2N4869, 2N4869A
N-Channel Silicon Junction Field-Effect Transistor
Absolute maximum ratings at TA = 2 5 ° C
Reverse Gate Source & Reverse Gate Drain Voltage
- 40 V
Gate Current
50 mA
Continuous Device Power Dissipation
SOOmW
Power Derating
1.7mW/°C
Storage Temperature Range
- 65°C to + 200°C
2N4867
.. ^,~ ,
.
At 25 C free air temperature:
2N4868
2N4869
2N4869A
2N4867A
2N4868A
\c Electrical Characteristics
Max
i Gate Source Breakdown Voltage
V(BR)GSS
Gate Reverse Current
~ 40
l/~cc
:
Gate Source Cutoff Voltage
Drain Saturation Current (Pulsed)
j VGS(OFF)
IDSS
-^
-i ---0.25!
j - 0.7
j 0.4
- 2
1.2
-1
1
, 200°
100°
r,
.,,.Process NJ1b
j Mln
Unit
Max
Max
1
j
Min
lest Conditions
^0.2F
i-0.25| nA
'G = ~ i M^' VDS - 0 v
VGS = - 3ov, % = 0V
1-0.25
-0.25; pA
Vpc
= — 30V, Vnc
=0 V
VJJ
UO
j
VDS = 20V, ID = f pA
|
VDS = 20V VGS • 0v
;
-40
~ 40
- 0.25 i
'
!
GSS
Min
!
|
f
-3
3
V
-1.8 + - 5
2.5
V
7.5 ^ m A
!
i
!
!
1
i
TAA = 150°C
.
i
uynamic Flcr.trical Characteristics
Common Source Forward
Transconductance
9fs
Common Source Output Conductance
Common Source Input Capacitance
gos
Cjss
Common Source Reverse
Transfer Capacitance
Equivalent Short Circuit
: Input Noise Voltage
Noise Figure
I
70°
;
|
1.5 ;
25 •
3000
1300
crss
1
\
\0
N
!
i
~~r
I
T
NF
!
'•'
5
;
j 10 i
pS
VDS = 20V, VGS = 0V
i
f=1kHz
j
4
:
5
10
:
pS
VDS = 20V, VGS = 0V
;
!
PF
VDS = 20V VGS = 0v
: f = 1 MHZ j
^
pF
VDS = 20V VGS = 0V
20
10
InV/VHzf
VDS = 10V, VGS = 0V
• "i—
•
5
!
^ 20
- H
10 inwVHZJ
j
:
i
J
25
i
25
f-
j
4000
f=1kHz
I
]
' f = iMHz ;
1" f = 1 0 H z
VDS = iov, VGS = 0V
VDS = 10VV G s = 0V
]
i r"=ik~Hz
]
f=1kHz
(2N4867, 68, 69) RG = 20 kQ
(2N4867A, 68A, 69A) RG = 5 k
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