NTE2380 (N−Ch) & NTE2381 (P−Ch) Complementary Silicon Gate MOSFETs Enhancement Mode, High Speed Switch TO−220 Type Package Description: The NTE2380 (N−Ch) and NTE2381 (P−Ch) are complementary TMOS power FETs in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid, and relay drivers. Features: D Silicon Gate for Fast Switching Speeds D Rugged − SOA is Power Dissipation Limited D Source−to−Drain Diode Characterized for Use With Inductive Loads Absolute Maximum Ratings: Drain−Source Voltage, VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Drain−Gate Voltage (RGS = 1M), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500V Gate−Source Voltage, VGS NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Drain Current, ID Continuous NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5A NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.7A Pulsed NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10.8A Total Power Dissipation (TC = +25C), PD NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.32W/C NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W/C Operating Temperature Range, Topr NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Storage Temperature Range, Tstg NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65 to +150C Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Thermal Resistance, Junction−to−Case, RthJC NTE2380 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12C/W NTE2381 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4C/W Maximum Lead Temperature (During Soldering, 1/8” from case, 5sec), TL . . . . . . . . . . . . . . +300C Rev. 1−16 Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit 500 − − V − − 0.25 mA − − 1 A − − 1.0 mA − − 10 A VGSF = 20V, VDS = 0 − − 500 nA VGSF = 30V, VDS = 0 − − 100 nA VGSF = 20V, VDS = 0 − − 500 nA VGSF = 30V, VDS = 0 − − 100 nA 2.0 − 4.0 V 3.0 − 5.0 V VGS = 10V, ID = 1A − − 3 VGS = 10V, ID = 1.35A − 3.9 4.9 VDS 7.5V, ID = 1A 1 − − mhos VDS = 50V, ID = 1.35A − 2.35 − mhos VDS = 25V, VGS = 0, f = 1MHz − − 400 pF − 510 660 pF − − 150 pF − 70 90 pF − − 40 pF − 9.5 12 pF VDD [ 200V, ID = 1A, Rgen = 50 − − 60 ns VDD = 250V, ID = 2.7A, Rgen = 25 − 12 35 ns VDD [ 200V, ID = 1A, Rgen = 50 − − 50 ns VDD = 250V, ID = 2.7A, Rgen = 25 − 56 120 ns VDD [ 200V, ID = 1A, Rgen = 50 − − 60 ns VDD = 250V, ID = 2.7A, Rgen = 25 − 35 80 ns VDD [ 200V, ID = 1A, Rgen = 50 − − 30 ns VDD = 250V, ID = 2.7A, Rgen = 25 − 45 100 ns OFF Characteristics Drain−Source Breakdown Voltage Zero Gate Voltage Drain Current NTE2380 V(BR)DSS VGS = 0, ID = 0.25mA IDSS VDS = 500V, VGS = 0 NTE2381 NTE2380 VDS = 400V, VGS = 0, TJ = +125C NTE2381 Gate−Body Leakage Current, Forward NTE2380 IGSSF NTE2381 Gate−Body Leakage Current, Reverse NTE2380 IGSSR NTE2381 ON Characteristics (Note 1) Gate Threshold Voltage NTE2380 VGS(th) VDS = VGS, ID = 0.25mA NTE2381 Static Drain−Source On−Resistance NTE2380 rDS(on) NTE2381 Forward Transconductance NTE2380 gFS NTE2381 Dynamic Characteristics Input Capacitance NTE2380 Ciss NTE2381 Output Capacitance NTE2380 Coss NTE2381 Reverse Transfer Capacitance NTE2380 Crss NTE2381 Switching Characteristics (Note 1) Turn−On Time NTE2380 td(on) NTE2381 Rise Time NTE2380 tr NTE2381 Turn−Off Time NTE2380 td(off) NTE2381 Fall Time NTE2380 NTE2381 tf Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Electrical Characteristics (Cont’d): (TC = +25C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit − 12 15 ns − 18 23 ns − 6 − ns − 3.6 − ns − 6 − ns − 9.2 − ns − − 1.6 V − − 2.7 V Switching Characteristics (Cont’d) (Note 1) Total Gate Charge NTE2380 Qg NTE2381 Gate−Source Charge NTE2380 VGS = 10V, VDS = 400V, ID = Rated ID Qgs NTE2381 Gate−Drain Charge NTE2380 Qgd NTE2381 Source Drain Diode Characteristics (Note 1) Forward On−Voltage NTE2380 VSD IS = Rated ID, VGS = 0 NTE2381 Forward Turn−On Time ton Reverse Recovery Time NTE2380 trr Limited by stray inductance − 500 − ns − 270 − ns Measured from contact screw on tab to center of die − 3.5 − nH Measured from the drain lead 0.25” from package to center of die − 4.5 − nH Measured from the source lead 0.25” from package to center of pad − 7.5 − nH NTE2381 Internal Package Inductance Internal Drain Inductance Ld Internal Source Inductance Ls Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. NTE2380 NTE2381 D D G G S S .420 (10.67) Max .110 (2.79) Drain .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain