INFRA-RED 1060 nm Preliminary Item No.: 150234-1060 1. This specification applies to high power, high speed MQW IR-Chips with PWL 1060 nm 2. Structure 2.1 Mesa structure 2.2 Electrodes p-side (anode) n-side (cathode) Au alloy Au alloy p-Electrode p-Epitaxy 365 active layer 250 typ. n-Epitaxy n-Substrate GaAs 365 n-Electrode 3. Outlines (dimensions in microns) 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions Forward voltage VF Forward voltage Reverse current output Power Φe IF = 50 mA 4.0 mW Radiant intensity Ie IF =100 mA 1.0 mW/sr tr, tf IF =100 mA 20 ns Switching time typ max Unit IF = 20 mA 1.15 1.30 V VF IF = 100 mA 1.25 1.40 V IR IR = 5 V 10 µA FWHM IF = 100 mA ½λP Peak wavelength IF = 100 mA λP Power measurement at OSA on gold plate 5. min 1040 80 1060 1080 nm nm Packing Dice on adhesive film with wire bond side on top © 2011 OSA Opto Light GmbH · Tel. +49-(0)30-65762683 · Fax +49-(0)30-65762681 · [email protected] 6. Labeling We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use OSA Opto Light products for any unintended or unauthorized application, the buyer shall indemnify OSA Opto Light against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. OSA Opto Light products described in this document are not authorized for use as critical components in life support systems without the written consent of the appropriate officer of OSA Opto Light GmbH. Life support systems are either systems intended for surgical implant in the body or systems which sustain life. © 2011 OSA Opto Light GmbH · Tel. +49-(0)30-65762683 · Fax +49-(0)30-65762681 · [email protected]