RENESAS HAT3010R

HAT3010R
Silicon N / P Channel Power MOS FET
High Speed Power Switching
REJ03G1199-1000
(Previous: ADE-208-1402H)
Rev.10.00
Sep 07, 2005
Features
• Low on-resistance
• Capable of 4.5 V gate drive
• High density mounting
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
7 8
D D
65
87
2
G
12
5 6
D D
4
G
1, 3
2, 4
5, 6, 7, 8
34
S1
Nch
Rev.10.00 Sep 07, 2005 page 1 of 9
S3
Pch
Source
Gate
Drain
HAT3010R
Absolute Maximum Ratings
(Ta = 25°C)
Item
Value
Symbol
Unit
Nch
Pch
VDSS
VGSS
60
±20
–60
±20
V
V
ID
Note 1
ID (pulse)
6
48
–5
–40
A
A
Body-drain diode reverse drain current
Channel dissipation
IDR
Note 2
Pch
6
2
–5
2
A
W
Channel dissipation
Channel temperature
Pch
Tch
3
150
3
150
W
°C
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Note 3
Storage temperature
Tstg
–55 to +150
–55 to +150
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
°C
Electrical Characteristics
N Channel
(Ta = 25°C)
Item
Symbol
Min
Typ
Max
Unit
V (BR) DSS
V (BR) GSS
60
±20
—
—
—
—
V
V
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
IGSS
IDSS
—
—
—
—
±10
1
µA
µA
VGS = ±16 V, VDS = 0
VDS = 60 V, VGS = 0
Gate to source cutoff voltage
Static drain to source on state resistance
VGS (off)
RDS (on)
1.0
—
—
25
2.5
32
V
mΩ
VDS = 10 V, ID = 1 mA
Note 4
ID = 3 A, VGS = 10 V
Forward transfer admittance
RDS (on)
|yfs|
—
7
32
11
45
—
mΩ
S
ID = 3 A, VGS = 4.5 V
Note 4
ID = 3 A, VDS = 10 V
Input capacitance
Output capacitance
Ciss
Coss
—
—
1050
150
—
—
pF
pF
Reverse transfer capacitance
Turn-on delay time
Crss
td (on)
—
—
90
15
—
—
pF
ns
VDS = 10 V
VGS = 0
f = 1 MHz
tr
15
55
—
—
ns
ns
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Zero gate voltage drain current
Rise time
Turn-off delay time
td (off)
—
—
Fall time
Body-drain diode forward voltage
tf
VDF
—
—
10
0.85
—
1.10
ns
V
trr
—
50
—
ns
Body-drain diode reverse recovery time
Note:
4. Pulse test
Rev.10.00 Sep 07, 2005 page 2 of 9
Test Conditions
Note 4
VGS = 10 V, ID = 3 A
VDD ≅ 30 V
RL = 10 Ω
Rg = 4.7 Ω
IF = 6 A, VGS = 0
IF = 6 A, VGS = 0
diF/dt = 100 A/µs
Note 4
HAT3010R
P Channel
(Ta = 25°C)
Item
Drain to source breakdown voltage
Symbol
V (BR) DSS
Min
–60
Typ
—
Max
—
Unit
V
Gate to source breakdown voltage
Gate to source leak current
V (BR) GSS
IGSS
±20
—
—
—
—
±10
V
µA
IG = ±100 µA, VDS = 0
VGS = ±16 V, VDS = 0
IDSS
VGS (off)
—
–1.0
—
—
–1
–2.5
µA
V
VDS = –60 V, VGS = 0
VDS = –10 V, ID = –1 mA
RDS (on)
RDS (on)
—
—
60
90
76
130
mΩ
mΩ
ID = –2.5 A, VGS = –10 V
Note 5
ID = –2.5 A, VGS = –4.5 V
Forward transfer admittance
Input capacitance
|yfs|
Ciss
3
—
5
1350
—
—
S
pF
Output capacitance
Reverse transfer capacitance
Coss
Crss
—
—
135
85
—
—
pF
pF
ID = –2.5 A, VDS = –10 V
VDS = –10 V
VGS = 0
f = 1 MHz
Turn-on delay time
Rise time
td (on)
tr
—
—
20
15
—
—
ns
ns
Turn-off delay time
Fall time
td (off)
tf
—
—
55
10
—
—
ns
ns
Body-drain diode forward voltage
Body-drain diode reverse recovery time
VDF
trr
—
—
–0.85
50
–1.10
—
V
ns
Zero gate voltage drain current
Gate to source cutoff voltage
Static drain to source on state resistance
Note:
5. Pulse test
Rev.10.00 Sep 07, 2005 page 3 of 9
Test Conditions
ID = –10 mA, VGS = 0
Note 5
VGS = –10 V, ID = –2.5 A
VDD ≅ –30 V
RL = 12 Ω
Rg = 4.7 Ω
IF = –5 A, VGS = 0
IF = –5 A, VGS = 0
diF/dt = 100 A/µs
Note 5
Note 5
HAT3010R
Main Characteristics
N Channel
Typical Output Characteristics
Maximum Safe Operation Area
10
10
DC
Op
1
0µ
10 V
4V
µs
ID (A)
10
10
s
1m
s
=1
0m
era
tio
s
n(
PW
≤ 1 Note
0s 6
)
PW
Operation in
this area is
limited by RDS (on)
0.1
3V
8
Pulse Test
6
Drain Current
Drain Current
ID (A)
100
0.01
4
2
2.5 V
Ta = 25°C
1 shot Pulse
0.001
0.1
VGS = 2 V
0
0.3
1
3
10
30
0
100
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage
VDS (on) (mV)
10
8
Drain Current
6
25°C
Tc = 75°C
–25°C
1
2
3
4
Gate to Source Voltage
5
Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
0.05
VGS = 4.5 V
0.02
0.01
10 V
1
3
10
Drain Current
Rev.10.00 Sep 07, 2005 page 4 of 9
30
ID (A)
8
300
10
VDS (V)
Pulse Test
200
ID = 5 A
100
2A
0
1A
0
100
5
10
15
Gate to Source Voltage
VGS (V)
Static Drain to Source on State Resistance
RDS (on) (Ω)
ID (A)
VDS = 10 V
Pulse Test
0
0
6
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Typical Transfer Characteristics
2
4
Drain to Source Voltage
Note 6:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
4
2
20
VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08
1 A, 2 A
0.06
0.04
ID = 5 A
VGS = 4.5 V
1 A, 2 A, 5 A
0.02
0
–40
10 V
0
40
80
Case Temperature
120
Tc (°C)
160
HAT3010R
Body-Drain Diode Reverse
Recovery Time
1000
50
Reverse Recovery Time trr (ns)
20
Tc = –25°C
10
25°C
75°C
2
1
VDS = 10 V
Pulse Test
0.5
0.1
0.3
1
3
10
30
200
100
50
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
20
10
0.1
100
Drain Current ID (A)
VDS (V)
1000
Ciss
Drain to Source Voltage
Capacitance C (pF)
2000
200
Coss
50
Crss
VGS = 0
f = 1 MHz
20
10
0
10
20
30
40
16
VDD = 50 V
25 V
10 V
60
VGS
40
8
20
4
VDD = 50 V
25 V
10 V
0
0
8
16
24
Gate Charge
Reverse Drain Current IDR (A)
Switching Time t (ns)
td(off)
tr
tf
3
1
0.1
12
VDS
0
32
40
Qg (nc)
Reverse Drain Current vs.
Source to Drain Voltage
300
10
IDR (A)
20
10
td(on)
100
80
50
VGS = 10 V, VDD = 30 V
PW = 5 µs, duty ≤ 1 %
100
30
ID = 6 A
Switching Characteristics
30
10
100
Drain to Source Voltage VDS (V)
1000
3
Dynamic Input Characteristics
5000
100
1
Reverse Drain Current
Typical Capacitance vs.
Drain to Source Voltage
500
0.3
Pulse Test
10 V
8
6
5V
4
VGS = 0, –5 V
2
0
0.3
1
3
Drain Current
10
30
ID (A)
Rev.10.00 Sep 07, 2005 page 5 of 9
100
0
0.4
0.8
1.2
Source to Drain Voltage
1.6
VSD
2.0
(V)
VGS (V)
5
500
Gate to Source Voltage
Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance vs.
Drain Current
HAT3010R
P Channel
Typical Output Characteristics
Maximum Safe Operation Area
–10
–100
–10 V
µs
ID (A)
10
0µ
s
1
m
DC
s
=
Op
10
era
ms
–1
tio
n(
PW
≤ 1 Note
Operation in
0s 7
)
–0.1 this area is
limited by RDS (on)
–10
PW
–0.01
Ta = 25°C
1 shot Pulse
–0.001
–0.1 –0.3
–6 V
–8
–4.5 V
–3 V
–2
VGS = –2.5 V
0
–1
–3
–10
–30
0
–100
Drain to Source Saturation Voltage
VDS (on) (V)
–10
–8
Drain Current
–6
–4
Tc = 75°C
25°C
–25°C
–3
–4
Gate to Source Voltage
–5
Drain to Source on State Resistance
RDS (on) (Ω)
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
VGS = –4.5 V
0.05
–10 V
0.02
0.01
–1
–3
–10
Drain Current
Rev.10.00 Sep 07, 2005 page 6 of 9
–30
ID (A)
–6
–1.0
–8
–10
VDS (V)
Pulse Test
–0.8
–0.6
–0.4
ID = –5 A
–0.2
–2 A
–1 A
0
0
–100
–5
–10
–15
Gate to Source Voltage
VGS (V)
Static Drain to Source on State Resistance
RDS (on) (Ω)
ID (A)
VDS = –10 V
Pulse Test
–2
–4
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Typical Transfer Characteristics
–1
–2
Drain to Source Voltage
Note 7:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0
0
–3.5 V
–4
Drain to Source Voltage VDS (V)
–2
Pulse Test
–6
Drain Current
Drain Current
ID (A)
10
–20
VGS (V)
Static Drain to Source on State Resistance
vs. Temperature
0.25
Pulse Test
0.20
–5 V
ID = –1 A, –2 A
0.15
VGS = –4.5 V
0.10
–5 V
–1 A, –2 A
0.05
–10 V
0
–40
0
40
80
Case Temperature
120
Tc (°C)
160
HAT3010R
Body-Drain Diode Reverse
Recovery Time
1000
50
20
10
Tc = –25°C
25°C
75°C
2
1
VDS = –10 V
Pulse Test
0.5
–0.1 –0.3
–1
–3
–10
–30
500
200
100
50
di / dt = 100 A / µs
VGS = 0, Ta = 25°C
20
10
–0.1 –0.3
–100
Drain Current ID (A)
–30
–100
IDR (A)
VDS (V)
0
0
–20
VDD = –10 V
–25 V
–50 V
–4
–40
VGS
–8
500
200
Coss
100
50
Crss
VGS = 0
f = 1 MHz
20
10
0
–10
–20
–30
–40
VDS
–60
–80
–16
ID = –5 A
–100
0
–50
–12
VDD = –10 V
–25 V
–50 V
8
16
24
Gate Charge
Drain to Source Voltage VDS (V)
1000
Qg (nc)
Reverse Drain Current IDR (A)
–10
300
tr
td(off)
30
td(on)
10
tf
VGS = –10 V, VDD = –30 V
PW = 5 µs, duty ≤ 1 %
1
–0.1 –0.3
–1
–3
Drain Current
–10
Pulse Test
–8
–10 V
–6
–5 V
–4
VGS = 0, 5 V
–2
0
–30
ID (A)
Rev.10.00 Sep 07, 2005 page 7 of 9
–20
40
Reverse Drain Current vs.
Source to Drain Voltage
Switching Characteristics
100
32
–100
–1.2
–1.6
Source to Drain Voltage
VSD
0
–0.4
–0.8
–2.0
(V)
Gate to Source Voltage
Ciss
Drain to Source Voltage
Capacitance C (pF)
2000
Switching Time t (ns)
–10
Dynamic Input Characteristics
5000
3
–3
Reverse Drain Current
Typical Capacitance vs.
Drain to Source Voltage
1000
–1
VGS (V)
5
Reverse Recovery Time trr (ns)
Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance vs.
Drain Current
HAT3010R
Common
Power vs. Temperature Derating
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3.0
2
Dr
2.0
ive
Op
er
ion
0
ive
at
1.0
Dr
er
1
Op
Channel Dissipation
Pch (W)
4.0
0
50
at
ion
100
150
Ambient Temperature
200
Ta (°C)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)
10
1
D=1
0.5
0.1
0.2
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 125°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.05
0.01
0.02
0.01
e
0.001
t
ho
1s
0.0001
10 µ
D=
PDM
ls
pu
PW
T
PW
T
100 µ
1m
10 m
100 m
1
10
100
1000
10000
Pulse Width PW (S)
Normalized Transient Thermal Impedance γ s (t)
Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)
10
1
D=1
0.5
0.1
0.2
0.1
θch – f (t) = γ s (t) • θch – f
θch – f = 166°C/W, Ta = 25°C
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
0.05
0.01
0.02
0.01
0.001
0.0001
10 µ
1s
ho
tp
100 µ
PW
T
PW
T
1m
10 m
100 m
1
Pulse Width PW (S)
Rev.10.00 Sep 07, 2005 page 8 of 9
D=
PDM
e
uls
10
100
1000
10000
HAT3010R
Package Dimensions
JEITA Package Code
RENESAS Code
P-SOP8-3.95 × 4.9-1.27
PRSP0008DD-D
Package Name
FP-8DAV
0.085g
F
*1 D
MASS[Typ.]
bp
5
Index mark
1
c
HE
*2 E
8
4
Z
Terminal cross section
(Ni/Pd/Au plating)
*3 bp
x M
NOTE)
1. DIMENSIONS "*1(Nom)" AND "*2"
DO NOT INCLUDE MOLD FLASH.
2. DIMENSION "*3" DOES NOT
INCLUDE TRIM OFFSET.
e
Reference
Symbol
L1
Dimension in Millimeters
Min
Nom
Max
D
4.90
5.3
E
3.95
A2
A1
0.10
0.14
0.25
0.34
0.40
0.46
0.15
0.20
0.25
1.75
A
A
bp
A1
b1
c
L
c1
0°
y
HE
Detail F
5.80
e
8°
6.10
6.20
1.27
x
0.25
y
0.1
Z
0.75
L
L1
0.40
0.60
1.27
1.08
Ordering Information
Part Name
Quantity
Shipping Container
HAT3010R-EL-E
2500 pcs
Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
Rev.10.00 Sep 07, 2005 page 9 of 9
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary
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Colophon .3.0