1.2V Drive Pch MOSFET EM6J1 zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET EMT6 zFeatures 1) Two Pch MOSFET are put in EMT6 package. 2) High-speed switching. 3) Ultra low voltage drive (1.2V drive). 4) Built-in G-S Protection Diode. Abbreviated symbol : J01 Each lead has same dimensions zApplications Switching zPackaging specifications zInner circuit Package Type (6) Taping Code T2R Basic ordering unit (pieces) 8000 (5) (4) ∗1 EM6J1 ∗2 ∗2 ∗1 (1) (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain zAbsolute maximum ratings (Ta=25°C) <It is the same ratings for the Tr1 and Tr2.> Parameter Symbol Limits Unit Drain-source voltage Gate-source voltage VDSS VGSS ID IDP∗1 IS ISP ∗1 −20 ±10 ±200 ±800 −100 −800 150 120 150 −55 to +150 V V mA mA mA mA mW / TOTAL mW / ELEMENT °C °C Continuous Pulsed Continuous Pulsed Drain current Source current (Body Diode) Total power dissipation Channel temperature Range of storage temperature PD ∗2 Tch Tstg ∗1 Pw 10µs, Duty cycle 1% ∗2 Each terminal mounted on a recommended land zThermal resistance Parameter Channel to ambient Symbol Rth (ch-a) ∗ Limits 833 1042 Unit °C / W / TOTAL °C / W / ELEMENT ∗ Each therminal mounted on a recommended land www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.05 - Rev.A Data Sheet EM6J1 zElectrical characteristics (Ta=25°C) <It is the same ratings for the Tr1 and Tr2.> Parameter Symbol Min. IGSS Gate-source leakage − Drain-source breakdown voltage V(BR) DSS −20 Zero gate voltage drain current IDSS − Gate threshold voltage VGS (th) −0.3 − − ∗ Static drain-source on-state − RDS (on) resistance − Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Yfs ∗ Ciss Coss Crss td (on) ∗ tr ∗ td (off) ∗ tf ∗ Qg ∗ Qgs ∗ Qgd ∗ Typ. − − − − 0.8 1.0 1.3 1.6 Max. ±10 − −1 −1.0 1.2 1.5 2.2 3.5 Unit µA V µA V Ω Ω Ω Ω Conditions VGS= ±10V, VDS=0V ID=−1mA, VGS=0V VDS=−20V, VGS=0V VDS=−10V, ID=−100µA ID=−200mA, VGS=−4.5V ID=−100mA, VGS=−2.5V ID=−100mA, VGS=−1.8V ID=−40mA, VGS=−1.5V − 2.4 9.6 Ω ID=−10mA, VGS=−1.2V 0.2 − − − − − − − − − − − 115 10 6 6 4 17 17 1.4 0.3 0.3 − − − − − − − − − − − S pF pF pF ns ns ns ns nC nC nC VDS=−10V, ID=−200mA VDS=−10V VGS=0V f=1MHz VDD −10V ID=−100mA VGS=−4.5V RL 100Ω RG=10Ω VDD −10V, ID=−200mA VGS=−4.5V RL 50Ω, RG=10Ω Unit V IS= −200mA, VGS=0V ∗Pulsed zBody diode characteristics (Source-drain) Parameter Forward voltage ∗Pulsed Symbol VSD ∗ Min. Typ. Max. − − −1.2 www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Conditions 2/4 2009.05 - Rev.A Data Sheet EM6J1 zElectrical characteristics curves 0.15 0.2 Ta=25°C Pulsed VGS= -1.5V VGS= -2.5V VGS= -1.8V VGS= -1.5V 0.15 VGS= -2.5V VGS= -2.0V VGS= -1.8V 0.1 0.05 VGS= -1.2V 0.1 0.05 VGS= -1.2V VGS= -1.0V VGS= -1.0V 0 0.4 0.6 0.8 1 0 2 DRAIN-SOURCE VOLTAGE : -VDS[V] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 1000 VGS= -1.2V VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 8 0 10 0.5 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 1 0.01 0.1 1.5 Fig.3 Typical Transfer Characteristics 10000 VGS= -4.5V Pulsed 1 GATE-SOURCE VOLTAGE : -VGS[V] 1000 VGS= -2.5V Pulsed 1000 100 0.001 1 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.01 0.1 1 DRAIN-CURRENT : -ID [A] DRAIN-CURRENT : -ID [A] DRAIN-CURRENT : -ID [A] Fig.4 Static Drain-Source On-State Resistance vs. Drain Current(Ⅰ) Fig.5 Static Drain-Source On-State Resistance vs. Drain Current(Ⅱ) Fig.6 Static Drain-Source On-State Resistance vs. Drain Current(Ⅲ) 10000 VGS= -1.8V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10000 6 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 100 0.001 10000 VGS= -1.5V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10000 0.1 4 Fig.2 Typical output characteristics(Ⅱ) Ta=25°C Pulsed 0.01 0.001 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics(Ⅰ) 100 0.001 Ta= 125°C Ta= 75°C Ta= 25°C Ta= - 25°C 0.01 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 0.2 0.1 0.0001 0 0 10000 1 V = -10V DS Pulsed Ta=25°C Pulsed VGS= -4.5V DRAIN CURRENT : -ID [A] VGS= -10.0V VGS= -4.5V VGS= -3.2V DRAIN CURRENT : -ID [A] DRAIN CURRENT : -ID [A] 0.2 1000 0.01 0.1 1 DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(Ⅳ) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 100 0.001 0.01 0.1 DRAIN-CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(Ⅴ) 3/4 VGS= -1.2V Pulsed Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 1000 100 0.001 0.01 0.1 DRAIN-CURRENT : -ID [A] Fig.9 Static Drain-Source On-State Resistance vs. Drain Current(Ⅵ) 2009.05 - Rev.A Data Sheet Ta=-25°C Ta=25°C Ta=75°C Ta=125°C Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 0.1 ID = -0.2A 3 ID = -0.01A 2 1 0 0 1 0.5 tf 100 td(on) 1 2 0.1 1 3 2 Ta=25°C VDD = -10V ID = -0.2A R G=10Ω Pulsed 0 0.5 1 Ta=25°C f=1MHz VGS=0V 8 10 Ciss 100 10 Coss Crss 1 0.01 1.5 TOTAL GATE CHARGE : Qg [nC] DRAIN-CURRENT : -ID [A] Fig.13 Switching Characteristics 6 Fig.12 Static Drain-Source On-State Resistance vs. Gate Source Voltage 4 1 4 GATE-SOURCE VOLTAGE : -VGS[V] 1000 0 0.01 0 5 Ta=25°C VDD = -10V VGS=-4.5V R G=10Ω Pulsed 10 tr 1.5 Fig.11 Reverse Drain Current vs. Sourse-Drain Voltage GATE-SOURCE VOLTAGE : -VGS [V] td(off) 1 SOURCE-DRAIN VOLTAGE : -VSD [V] DRAIN-CURRENT : -ID [A] 1000 Ta=25°C Pulsed 4 0.01 0.1 0.01 Fig.10 Forward Transfer Admittance vs. Drain Current SWITCHING TIME : t [ns] 5 VGS=0V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : R DS(ON)[Ω] 1 VDS= -10V Pulsed CAPACITANCE : C [pF] 1.0 REVERSE DRAIN CURRENT : -Is [A] FORWARD TRANSFER ADMITTANCE : |Yfs| [S] EM6J1 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.15 Typical Capacitance vs. Drain-Source Voltage Fig.14 Dynamic Input Characteristics zMeasurement circuit Pulse Width VGS 10% 50% VGS ID D.U.T. 50% 90% VDS 10% RL RG 90% VDS VDD td(on) 90% td(off) tr ton Fig.1-1 Switching Time Measurement Circuit 10% tf toff Fig.1-2 Switching Waveforms VG VGS ID VDS Qg RL IG(Const.) VGS D.U.T. RG VDD Qgs Qgd Charge Fig.2-1 Gate Charge Measurement Circuit Fig.2-2 Gate Charge Waveform zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/4 2009.05 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. 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