1.5V Drive Pch+Pch MOSFET US6J11 zDimensions (Unit : mm) zStructure Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Two Pch MOSFET transistors in a single TUMT6 package. 2) Mounting cost and area can be cut in half. 3) Low on-resistance. 4) Low voltage drive (1.5V) makes this device ideal for portable equipment. 5) Drive circuits can be simple. Abbreviated symbol : J11 zInner circuit zApplication Switching (6) (5) (4) ∗1 Package Type ∗2 ∗2 zPackaging specifications Taping ∗1 TR Code Basic ordering unit (pieces) 3000 (1) US6J11 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (3) (1) Tr1 Source (2) Tr1 Gate (3) Tr2 Drain (4) Tr2 Source (5) Tr2 Gate (6) Tr1 Drain zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Continuous Pulsed Continuous Pulsed Drain current Source current (Body diode) Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD Total power dissipation ∗2 Tch Tstg Channel temperature Range of Storage temperature Limits −12 ±10 ±1.3 ±5.2 −0.5 −5.2 1.0 0.7 150 −55 to +150 Unit V V A A A A W / TOTAL W / ELEMENT °C °C ∗1 Pw≤10µs, Duty cycle≤1% ∗2 When mounted on a ceramic board zThermal resistance Parameter Channel to ambient Symbol Rth(ch-a) ∗ Limits Unit 125 179 °C/W / TOTAL °C/W / ELEMENT ∗ When mounted on a ceramic board www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1/4 2009.08 - Rev.A US6J11 Data Sheet zElectrical characteristics (Ta=25°C) Symbol Min. Parameter Gate-source leakage IGSS − Drain-source breakdown voltage V(BR) DSS −12 Zero gate voltage drain current IDSS − Gate threshold voltage VGS (th) −0.3 − − ∗ Static drain-source on-state RDS (on) resistance − Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ − 1.4 − − − − − − − − − − Typ. Max. − − − − 190 280 ±10 − −1 −1.0 260 390 Unit µA V µA V mΩ mΩ VGS=±10V, VDS=0V ID= −1mA, VGS=0V VDS= −12V, VGS=0V VDS= −6V, ID= −1mA ID= −1.3A, VGS= −4.5V ID= −0.6A, VGS= −2.5V Conditions 400 530 − 290 28 21 8 10 30 9 2.4 0.6 0.4 600 1060 − − − − − − − − − − − mΩ mΩ S pF pF pF nS nS nS nS nC nC nC ID= −0.6A, VGS= −1.8V ID= −0.2A, VGS= −1.5V VDS= −6V, ID= −1.3A VDS= −6V VGS=0V f=1MHz VDD −6V ID= −0.6A VGS= −4.5V RL 10Ω RG=10Ω VDD −6V RL=4.6Ω ID= −1.3A RG=10Ω VGS= −4.5V ∗ Pulsed zBody diode characteristics (Source-drain) (Ta=25°C) Parameter Forward voltage Symbol VSD ∗ Min. − Typ. − Max. −1.2 Unit V Conditions IS= −1.3A, VGS=0V ∗ Pulsed www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 2/4 2009.08 - Rev.A US6J11 Data Sheet zElectrical characteristics curves 10 2 VGS= -1.8V 1 VGS= -1.5V 0.5 VGS= -1.2V VGS= -1.5V 1 VGS= -1.2V VGS= -1.0V 0.5 0.2 0.4 0.6 0.8 1 0 2 DRAIN-SOURCE VOLTAGE : -VDS[V] Fig.1 Typical output characteristics( I ) 10000 Ta=25°C Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 10000 1000 VGS= -1.5V VGS= -1.8V VGS= -2.5V VGS= -4.5V 100 10 0.01 0.1 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 8 0 10 0.5 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 DRAIN-CURRENT : -ID [A] Fig.7 Static Drain-Source On-State Resistance vs. Drain Current(IV) www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 1.5 Fig.3 Typical Transfer Characteristics Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 1 10000 VGS= -2.5V Pulsed 100 Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 10 0.01 0.1 1 DRAIN-CURRENT : -ID [A] Fig.8 Static Drain-Source On-State Resistance vs. Drain Current(V) 3/4 10 DRAIN-CURRENT : -ID [A] Ta=125°C Ta=75°C Ta=25°C Ta= -25°C 0.1 1 Fig.6 Static Drain-Source On-State Resistance vs. Drain Current( Ι Ι Ι ) 1000 100 2 1000 10 VGS= -1.5V Pulsed 10 0.01 1 DRAIN-SOURCE VOLTAGE : -VDS[V] DRAIN-CURRENT : -ID [A] 1000 1 0.01 Fig.2 Typical output characteristics( Ι Ι ) 10 0.01 10000 0.1 Ta= 25°C Ta= - 25°C Fig.5 Static Drain-Source On-State Resistance vs. Drain Current( Ι Ι ) VGS= -1.8V Pulsed 10 0.01 Ta= 125°C Ta= 75°C 0.1 GATE-SOURCE VOLTAGE : -VGS[V] 100 DRAIN-CURRENT : -ID [A] 100 6 VGS= -4.5V Pulsed Fig.4 Static Drain-Source On-State Resistance vs. Drain Current( Ι ) 10000 4 1000 10 1 0.001 0 0 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] 0 1.5 10 FORWARD TRANSFER ADMITTANCE : |Yfs| [S] 1.5 VDS= -6V Pulsed Ta=25°C Pulsed VGS= -4.5V VGS= -2.5V VGS= -1.8V DRAIN CURRENT : -ID [A] VGS= -10V VGS= -4.5V VGS= -2.5V DRAIN CURRENT : -ID [A] DRAIN CURRENT : -ID [A] 2 Ta=25°C Pulsed 10 VDS= -6V Pulsed 1 Ta= -25°C Ta=25°C Ta=75°C Ta=125°C 0.1 0.01 0.1 1 10 DRAIN-CURRENT : -ID [A] Fig.9 Forward Transfer Admittance vs. Drain Current 2009.08 - Rev.A VGS=0V Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=-25°C 0.1 600 1000 Ta=25°C Pulsed 500 SWITCHING TIME : t [ns] REVERSE DRAIN CURRENT : -Is [A] 10 Data Sheet STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(ON)[mΩ] US6J11 ID = -0.6A 400 ID = -1.3A 300 200 tf td(off) 100 10 100 td(on) tr 0 0.01 0 0.5 1 0 1.5 2 4 6 8 1 10 0.01 GATE-SOURCE VOLTAGE : -VGS[V] SOURCE-DRAIN VOLTAGE : -VSD [V] 0.1 1 10 DRAIN-CURRENT : -ID [A] Fig.11 Static Drain-Source On-State Resistance vs. Gate Source Voltage Fig.10 Reverse Drain Current vs. Sourse-Drain Voltage Fig.12 Switching Characteristics 1000 5 4 CAPACITANCE : C [pF] GATE-SOURCE VOLTAGE : -VGS [V] Ta=25°C VDD = -6V VGS= -4.5V RG=10Ω Pulsed 3 2 Ta=25°C VDD = -6V ID = -1.3A RG=10Ω Pulsed 1 0 0 0.5 1 1.5 2 2.5 100 Ciss Coss 10 Crss Ta=25°C f=1MHz VGS=0V 1 3 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : -VDS[V] TOTAL GATE CHARGE : Qg [nC] Fig.13 Dynamic Input Characteristics Fig.14 Typical Capacitance vs. Drain-Source Voltage zMeasurement circuits Pulse width ID VDS VGS VGS 10% 50% 90% RL D.U.T. 10% VDD RG 50% VDS 90% td(on) 90% td(off) tr ton Fig.1-1 Switching time measurement circuit 10% tf toff Fig.1-2 Switching waveforms VG ID VDS VGS RL D.U.T. IG(Const.) RG Qg VGS Qgs Qgd VDD Charge Fig.2-1 Gate charge measurement circuit Fig.2-2 Gate charge waveform zNotice This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com c 2009 ROHM Co., Ltd. All rights reserved. ○ 4/4 2009.08 - Rev.A Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM upon request. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. Great care was taken in ensuring the accuracy of the information specified in this document. However, should you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage. The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the use of such technical information. The Products specified in this document are intended to be used with general-use electronic equipment or devices (such as audio visual equipment, office-automation equipment, communication devices, electronic appliances and amusement devices). The Products specified in this document are not designed to be radiation tolerant. While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or malfunction for a variety of reasons. Please be sure to implement in your equipment using the Products safety measures to guard against the possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your use of any Product outside of the prescribed scope or not in accordance with the instruction manual. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). ROHM shall bear no responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended to be used for any such special purpose, please contact a ROHM sales representative before purchasing. If you intend to export or ship overseas any Product or technology specified herein that may be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to obtain a license or permit under the Law. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2009 ROHM Co., Ltd. All rights reserved. R0039A