2N5172 Silicon NPN Transistor Audio Power Amplifier TO−92 Type

2N5172
Silicon NPN Transistor
Audio Power Amplifier
TO−92 Type Package
Absolute Maximum Ratings: (TA = +25C, Note 1 unless otherwise specified)
Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V
Emitter−Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA
Total Device Dissipation , PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 625mW
Derate Above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0mW/C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −55 to +150C
Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.3C/W
Thermal Resistance, Junction−to−Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200C/W
Note 1. These ratings are limiting values above which the serviceability of any device may be impaired.
Note 2. These are steady state limits and are based on a maximum junction temperature of 150C.
Electrical Characteristics: (TA = +25C unless otherewise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
Collector−Base Breakdown Voltage
V(BR)CBO IC = 10A, IE = 0
25
−
−
V
Collector−Emitter Breakdown Voltage
V(BR)CEO IC = 10mA, IB = 0, Note 3
25
−
−
V
Emitter−Base Breakdown Voltage
V(BR)EBO IE = 10A, IC = 0
5
−
−
V
Collector Cutoff Current
ICBO
VCB = 25V, IE = 0
−
−
100
nA
Emitter Cutoff Current
IEBO
VEB = 5V, IC = 0
−
−
100
nA
DC Current Gain
hFE
VCE = 10V, IC = 10mA, Note 3
100
−
500
−
Collector−Emitter Saturation Voltage
VCE(sat)
IC = 10mA, IB = 1.0mA, Note 3
−
−
0.25
V
Base−Emitter On Voltage
VBE(on)
VCE = 10V, IC = 10mA, Note 3
0.5
−
1.2
V
Small−Signal Current Gain
hfe
IC = 10mA, VCE = 10V, f = 1.0 kHz
100
−
750
pF
Collector−Base Capacitance
Ccb
VCB = 10V, f = 1.0 MHz
1.6
−
10
pF
Note 3. Pulse Test: Pulse Width  300s, Duty Cycle  2%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
E C B
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max