NTE2986 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS(on) Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 5V) TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50A TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200A Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W/°C Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +175°C Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +300°C Mounting Torque, 6–32 or M3 Screw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbf•in (1.1 N•m) Thermal Resistance: Maximum Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0K/W Typical Case–to–Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . . 0.5K/W Maximum Junction–to–Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . . 62K/W Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. L = 179µH, VDD = 25V, RG = 25Ω, IAS = 51A, Starting TJ = +175°C. Note 3. ISD ≤ 51A, di/dt ≤ 250A/µs, VDD ≤ V(BR)DSS, TJ ≤ +175°C. Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain–Source ON Resistance Gate Threshold Voltage Forward Transconductance Drain–to–Source Leakage Current Symbol BVDSS Test Conditions Min Typ Max Unit 60 – – V – 0.07 – V/°C VGS = 5V, ID = 31A, Note 4 – – 0.028 Ω VGS = 4V, ID = 25A, Note 4 – – 0.039 Ω VDS = VGS, ID = 250µA 1.0 – 2.0 V VDS ≥ 25V, ID = 31A, Note 4 23 – – mhos VDS = 60V, VGS = 0 – – 25 µA VDS = 48V, VGS = 0V, , TC = +150°C – – 250 µA VGS = 0v, ID = 250µA ∆V(BR)DSS/ Reference to +25°C, ID = 1mA ∆TJ RDS(on) VGS(th) gfs IDSS Gate–Source Leakage Forward IGSS VGS = 10V – – 100 nA Gate–Source Leakage Reverse IGSS VGS = –10V – – –100 nA VGS = 5V, ID = 51A, VDS = 48V – – 66 nC Total Gate Charge Qg Gate–Source Charge Qgs – – 12 nC Gate–Drain (“Miller”) Charge Qgd – – 43 nC Turn–On Delay Time td(on) – 17 – ns – 230 – ns td(off) – 42 – ns tf – 110 – ns Between lead, 6mm (0.25”) from package and center of die contact – 4.5 – nH – 7.5 – nH VGS = 0V, VDS = 25V, f = 1MHz – 3300 – pF Rise Time Turn–Off Delay Time Fall Time tr Internal Drain Inductance LD Internal Source Inductance LS VDD = 30V, ID = 51A, RG = 4.6Ω, RD = 0.56Ω Ω Input Capacitance Ciss Output Capacitance Coss – 1200 – pF Reverse Transfer Capacitance Crss – 200 – pF (Body Diode) – – 50 A Source–Drain Diode Ratings and Characteristics Continuous Source Current IS Pulse Source Current ISM (Body Diode) Note 1 – – 200 A Diode Forward Voltage VSD TJ = +25°C, IS = 51A, VGS = 0V, Note 4 – – 2.5 V Reverse Recovery Time trr – 130 180 ns Reverse Recovery Charge Qrr TJ = +25°C, IF = 51A, di/dt = 100A/µs, Note 4 – 0.84 1.3 µC Forward Turn–On Time ton Intrinsic turn–on time is neglegible (turn–on is dominated by LS + LD) Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain/Tab