NTE2984 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO220 Type Package Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS(on) Specified at VGS = 4V & 5V D +1755C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements D G S Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 5V) TC = +255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17A TC = +1005C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12A Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68A Total Power Dissipation (TC = +255C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W Derate Above 255C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.40W/5C Gate−Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +10V Single Pulsed Avalanche Energy (Note 2), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110mJ Peak Diode Recovery dv/dt (Note 3), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1755C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −555 to +1755C Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +3005C Mounting Torque, 6−32 or M3 Screw . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 lbfwin (1.1 Nwm) Thermal Resistance: Maximum Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5K/W Typical Case−to−Sink (Mounting surface flat, smooth, and greased), RthCS . . . . . . . 0.5K/W Maximum Junction−to−Ambient (Free Air Operation), RthJA . . . . . . . . . . . . . . . . . . . . . 62K/W Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 2. L = 4443H, VDD = 25V, RG = 25. , Starting TJ = +1755C. Note 3. ISD 3 17A, di/dt 3 140A/3s, VDD 3 V(BR)DSS, TJ 3 +1755C. Rev. 10−13 Electrical Characteristics: (TC = +255C unless otherwise specified) Parameter Drain−Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain−Source ON Resistance Gate Threshold Voltage Forward Transconductance Drain−to−Source Leakage Current Symbol BVDSS Test Conditions Min Typ Max Unit 60 − − V − 0.06 − V/5C VGS = 5V, ID = 10A, Note 4 − − 0.10 . VGS = 5V, ID = 8.5A, Note 4 − − 0.14 . VDS = VGS, ID = 2503A 1.0 − 2.0 V VDS . 25V, ID = 10A, Note 4 7.3 − − mhos VDS = 60V, VGS = 0 − − 25 3A VDS = 48V, VGS = 0V, TC = +1505C − − 250 3A VGS = 0V, ID = 2503A +V(BR)DSS/ Reference to +255C, ID = 1mA +TJ RDS(on) VGS(th) gfs IDSS Gate−Source Leakage Forward IGSS VGS = 10V − − 100 nA Gate−Source Leakage Reverse IGSS VGS = −10V − − −100 nA VGS = 5V, ID = 17A, VDS = 48V − − 18 nC Total Gate Charge Qg Gate−Source Charge Qgs − − 4.5 nC Gate−Drain (“Miller”) Charge Qgd − − 12 nC Turn−On Delay Time td(on) − 11 − ns − 110 − ns td(off) − 23 − ns tf − 41 − ns Between lead, 6mm (0.25”) from package and center of die contact − 4.5 − nH − 7.5 − nH VGS = 0V, VDS = 25V, f = 1MHz − 870 − pF Rise Time Turn−Off Delay Time Fall Time tr Internal Drain Inductance LD Internal Source Inductance LS VDD = 30V, ID = 17A, RG = 9.0. , RD = 1.7. Input Capacitance Ciss Output Capacitance Coss − 360 − pF Reverse Transfer Capacitance Crss − 53 − pF (Body Diode) − − 17 A Source−Drain Diode Ratings and Characteristics Continuous Source Current IS Pulse Source Current ISM (Body Diode) Note 1 − − 68 A Diode Forward Voltage VSD TJ = +255C, IS = 17A, VGS = 0V, Note 4 − − 1.5 V Reverse Recovery Time trr − 110 260 ns Reverse Recovery Charge Qrr TJ = +255C, IF = 17A, di/dt = 100A/3s, Note 4 − 0.49 1.5 3C Forward Turn−On Time ton Intrinsic turn−on time is neglegible (turn−on is dominated by LS + LD) Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. Note 4. Pulse Test: Pulse Width 3 3003s, Duty Cycle 3 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) Dia Max .500 (12.7) Max .250 (6.35) Max .070 (1.78) Max Gate .100 (2.54) .500 (12.7) Min Source Drain/Tab