NTE NTE2980

NTE2980
Logic Level MOSFET
N–Channel, Enhancement Mode
High Speed Switch
Features:
D Dynamic dv/dt Rating
D Logic Level Gate Drive
D RDS(on) Specified at VGS = 4V & 5V
D Fast Switching
Absolute Maximum Ratings:
Drain Current, ID
Continuous (VGS = 5V)
TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.7A
TC = +100°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.9A
Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31A
Total Power Dissipation (TC = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.20W/°C
Total Power Dissipation (PC Board Mount, TC = +25°C, Note 2), PD . . . . . . . . . . . . . . . . . . . . . 2.5W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.02W/°C
Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±10V
Single Pulsed Avalanche Energy (Note 3), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47mJ
Peak Diode Recovery dv/dt (Note 4), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V/ns
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Maximum Lead Temperature (During Soldering, 1.6mm from case, 10sec), TL . . . . . . . . . . +260°C
Maximum Thermal Resistance:
Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0°C/W
Junction–to–Ambient (PCB Mount, Note 2), RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50°C/W
Junction–to–Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110°C/W
Note
Note
Note
Note
1.
2.
3.
4.
Repetitive Rating: Pulse width limited by maximum junction temperature.
When mounted on a 1” square PCB (FR–4 or G–10 material).
L = 924µH, VDD = 25V, RG = 25Ω, Starting TJ = +25°C, IAS = 7.7A.
ISD ≤ 10A, di/dt ≤ 90A/µs, VDD ≤ V(BR)DSS, TJ ≤ +150°C.
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Static Drain–Source ON Resistance
Gate Threshold Voltage
Forward Transconductance
Drain–to–Source Leakage Current
Symbol
BVDSS
Test Conditions
Min
Typ
Max
Unit
60
–
–
V
–
0.073
–
V/°C
VGS = 5V, ID = 4.6A, Note 5
–
–
0.20
Ω
VGS = 4V, ID = 3.9A, Note 4
–
–
0.28
Ω
VDS = VGS, ID = 250µA
1.0
–
2.0
V
VDS = 25V, ID = 4.6A, Note 5
3.4
–
–
mhos
VDS = 60V, VGS = 0
–
–
25
µA
VDS = 48V, VGS = 0V, TC = +125°C
–
–
250
µA
VGS = 0V, ID = 250µA
∆V(BR)DSS/ Reference to +25°C, ID = 1mA
∆TJ
RDS(on)
VGS(th)
gfs
IDSS
Gate–Source Leakage Forward
IGSS
VGS = 10V
–
–
100
nA
Gate–Source Leakage Reverse
IGSS
VGS = –10V
–
–
–100
nA
VGS = 5V, ID = 10A, VDS = 48V, Note 5
–
–
8.4
nC
Total Gate Charge
Qg
Gate–Source Charge
Qgs
–
–
3.5
nC
Gate–Drain (“Miller”) Charge
Qgd
–
–
6.0
nC
Turn–On Delay Time
td(on)
–
9.3
–
ns
–
110
–
ns
td(off)
–
17
–
ns
tf
–
26
–
ns
Between lead, 6mm (0.25”) from
package and center of die contact
–
4.5
–
nH
–
7.5
–
nH
VGS = 0V, VDS = 25V, f = 1MHz
–
400
–
pF
Rise Time
Turn–Off Delay Time
Fall Time
tr
Internal Drain Inductance
LD
Internal Source Inductance
LS
VDD = 30V, ID = 10A, RG = 12Ω,
RD = 2.8Ω,
Ω Note 5
Input Capacitance
Ciss
Output Capacitance
Coss
–
170
–
pF
Reverse Transfer Capacitance
Crss
–
42
–
pF
(Body Diode)
–
–
7.7
A
Source–Drain Diode Ratings and Characteristics
Continuous Source Current
IS
Pulse Source Current
ISM
(Body Diode) Note 1
–
–
31
A
Diode Forward Voltage
VSD
TJ = +25°C, IS = 7.7A, VGS = 0V, Note 5
–
–
1.6
V
Reverse Recovery Time
trr
–
65
130
ns
Reverse Recovery Charge
Qrr
TJ = +25°C, IF = 10A, di/dt = 100A/µs,
Note 5
–
0.33
0.65
µC
Forward Turn–On Time
ton
Intrinsic turn–on time is neglegible
(turn–on is dominated by LS + LD)
Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 5. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.256 (6.5)
.090 (2.3)
.002 (0.5)
.197 (5.0)
.059
(1.5)
.275
(7.0)
G
D
S
.295
(7.5)
.002 (0.5)
.090 (2.3)