NSVJ2394SA3 - ON Semiconductor

NSVJ2394SA3
Advance Information
N-Channel JFET
15V, 10 to 32mA, 38mS
Automotive JFET designed for compact and efficient designs and
including high gain performance. AEC-Q101 qualified JFET and PPAP
capable suitable for automotive applications.
Features
 Large | yfs |
 Small Ciss
 This Small Package Enables Sets to be Smaller and Thinner
 Ultralow Noise Figure
 Pb-Free and RoHS compliance
 AEC-Q101 qualified and PPAP capable.
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ELECTRICAL CONNECTION
N-Channel
3
1 : Source
2 : Drain
3 : Gate
2
1
Applications
 AM Tuner RF Amplifier
Low Noise Amplifier
3
1
SC-59 / CP3
SPECIFICATIONS
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C (Note 1)
Parameter
Symbol
2
Value
Unit
Drain-to-Source Voltage
VDSX
15
V
Gate-to-Drain Voltage
VGDS
15
V
Gate Current
IG
10
mA
Drain Current
ID
50
mA
Allowable Power Dissipation
PD
200
mW
Operating Junction and
Storage Temperature
TJ, TStg
55 to 150
MARKING
C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
© Semiconductor Components Industries, LLC, 2015
September 2015 - Rev. P1
1
Publication Order Number :
NSV2394SA3/D
NSVJ2394SA3
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Symbol
Gate-to-Drain Breakdown Voltage
V(BR)GDS
IG = 10A, VDS = 0V,
Gate Cutoff Current
IGSS
VGS = 10V, VDS = 0V
Cutoff Voltage
VGS(off)
VDS = 5V, ID = 100A
Drain Current
IDSS
VDS = 5V,VGS = 0V
10
Forward Transfer Admittance
| yfs |
VDS = 5V, VGS = 0V, f = 1kHz
20
Input Capacitance
Ciss
Reverse Transfer Capacitance
Crss
Noise Figure
NF
Conditions
Value
Parameter
min
typ
15
VDS = 5V, Rg = 1kΩ, ID = 1mA, f = 1kHz
V
1.0
0.3
VDS = 5V, VGS = 0V, f = 1MHz
Unit
max
0.7
1.5
32
nA
V
mA
38
mS
10
pF
2.9
pF
1.0
dB
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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NSVJ2394SA3
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NSVJ2394SA3
PACKAGE DIMENSIONS
unit : mm
SC-59 / CP3
CASE 318BJ
ISSUE O
D
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS,
OR GATE BURRS SHALL NOT EXCEED 0.20 PER SIDE.
4. DIMENSIONS D AND E1 ARE MEASURED AT THE OUTERMOST
EXTREME OF THE PLASTIC BODY.
5. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.10 AND 0.20 FROM THE TIP.
L
3X
3
E
E1
1
2
e
3X
DIM
A
A1
A2
b
c
D
E
E1
e
L
b
0.10
TOP VIEW
M
C A
A
3X
c
A2
A1
C
SIDE VIEW
SEATING
PLANE
END VIEW
GENERIC
MARKING DIAGRAM
XXX M
RECOMMENDED
SOLDERING FOOTPRINT*
3X
0.80
1
= Specific Device Code
= Date Code
= Pb-Free Package
(Note: Microdot may be in either location)
3X
1.00
XXX
M
*This information is generic. Please refer to
device data sheet for actual part marking.
3.40
0.95
PITCH
MILLIMETERS
MIN
MAX
0.95
1.35
0.00
0.10
0.20
0.40
0.35
0.50
0.10
0.20
2.75
3.05
2.30
2.70
1.35
1.65
0.95 BSC
0.35
0.75
DIMENSIONS: MILLIMETERS
*For additional information on our Pb-Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NSVJ2394SA3
ORDERING INFORMATION
Device
NSVJ2394SA3T1G
Marking
Package
Shipping
YJ
SC-59 3-Lead / CP3
Pb-Free)
3,000 / Tape & Reel
† For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D. http://www.onsemi.com/pub_link/Collateral/BRD8011-D.PDF
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and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each
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