Ordering number : EN7519A 50C02SS Bipolar Transistor http://onsemi.com 50V, 0.4A, Low VCE(sat) NPN Single SSFP Applications • Low-frequency Amplifer, high-speed switching small motor drive, muting circuit Features • • • • Large current capacity Low collector-to-emitter saturation voltage (resistance) : RCE(sat) typ=175mΩ[IC=0.5A, IB=50mA] Ultrasmall package facilitates miniaturization in end products Small ON-resistance (Ron) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg Unit 60 V 50 V 5 400 Mounted on a glass-epoxy board (20×30×1.6mm) V mA 800 mA 200 mW 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7029A-002 • Package : SSFP • JEITA, JEDEC : SC-81 • Minimum Packing Quantity : 8,000 pcs./reel 50C02SS-TL-E 1.4 0.1 3 Packing Type: TL Marking 0.3 1 2 0.45 0.2 TL Electrical Connection 0.6 0.07 0.07 YN LOT No. 0.8 0 to 0.02 LOT No. 1.4 0.3 0.25 1 2 3 1 : Base 2 : Emitter 3 : Collector 3 1 SSFP 2 Semiconductor Components Industries, LLC, 2013 August, 2013 71812 TKIM/52703 TSIM TA-100152 No.7519-1/7 50C02SS Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Conditions Ratings min typ max ICBO IEBO VCB=40V, IE=0A VEB=4V, IC=0A VCE=2V, IC=10mA Gain-Bandwidth Product hFE fT VCE=10V, IC=50mA 500 Output Capacitance Cob 2.8 Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=10V, f=1MHz IC=100mA, IB=10mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time 300 IC=100mA, IB=10mA Unit 100 nA 100 nA 800 MHz pF 50 100 mV 0.9 1.2 V V(BR)CBO V(BR)CEO IC=10μA, IE=0A 60 V IC=1mA, RBE=∞ 50 V V(BR)EBO ton IE=10μA, IC=0A 5 tstg tf See specified Test Circuit. V 30 ns 340 ns 55 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% OUTPUT IB2 INPUT VR RB RL 50Ω + 220μF VBE= --5V + 470μF VCC=25V IC=20IB1= --20IB2=200mA Ordering Information Device 50C02SS-TL-E Package Shipping memo SSFP 8,000pcs./reel Pb Free No.7519-2/7 50C02SS IC -- VCE 350 A 500 3mA 300 2mA 250 1mA 600μA 200 150 200μA 100 400 300 Ta=7 5°C 25°C --25°C 10m 20m 400 VCE=2V 5mA Collector Current, IC -- mA A 1 5m 7mA 8mA 30mA Collector Current, IC -- mA 450 IC -- VBE 600 A 500 200 100 50 IB=0 400 500 600 700 900 800 Collector-to-Emitter Voltage, VCE -- mV 0 0.6 0.8 1.0 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 100 7 5 3 2 1.2 IT05107 VCE(sat) -- IC IC / IB=10 VCE=2V 25°C --25°C 5 0.4 Base-to-Emitter Voltage, VBE -- V 3 Ta=75°C 7 0.2 IT05106 hFE -- IC 1000 DC Current Gain, hFE 0 1000 2 100 7 75 °C 300 5 Ta = 200 3 25 °C 5° C 100 --2 0 0 2 10 7 10 1.0 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA VCE(sat) -- IC Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 75 °C 5 25 °C 5° C Ta = 7 3 2 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA 5 7 100 2 3 IC / IB=50 3 2 °C 75 C 5° --2 100 7 °C 25 5 = Ta 3 2 2 3 5 7 10 2 3 5 7 100 2 25°C 1.0 Ta= --25°C 7 75°C 5 f=1MHz Output Capacitance, Cob -- pF 2 3 IT05110 Cob -- VCB IC / IB=20 3 5 7 1000 3 Collector Current, IC -- mA 10 5 5 7 1000 IT05411 VCE(sat) -- IC IT05109 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 5 10 1.0 5 7 1000 VBE(sat) -- IC 10 2 7 100 3 5 7 10 1000 2 2 3 Collector Current, IC -- mA IC / IB=20 10 1.0 2 IT05108 --2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 5 1.0 5 7 1000 7 5 3 2 2 0.1 1.0 2 3 5 7 10 2 3 5 7 100 Collector Current, IC -- mA 2 3 5 7 1000 IT05111 1.0 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 100 IT05112 No.7519-3/7 50C02SS fT -- IC 1000 100 7 5 7 5 3 2 OUT IN 1kΩ 2 IB 10 7 5 3 2 1.0 7 5 3 2 100 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 Collector Current, IC -- mA IT05113 PC -- Ta 250 Collector Dissipation, PC -- mW 1kΩ f=1MHz 3 ON Resistance, Ron -- Ω Gain-Bandwidth Product, fT -- MHz VCE=10V Ron -- IB 200 0.1 0.1 2 3 5 7 1.0 2 Base Current, IB -- mA 3 5 7 10 IT06092 M ou nt 150 ed on ag las s-e po xy 100 bo ar d( 20 ✕3 0✕ 1 50 .6m m ) 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT05114 No.7519-4/7 50C02SS Embossed Taping Specification 50C02SS-TL-E No.7519-5/7 50C02SS Outline Drawing 50C02SS-TL-E Land Pattern Example Mass (g) Unit 0.0018 mm * For reference Unit: mm 1.2 0.5 0.5 0.45 0.45 0.45 0.45 No.7519-6/7 50C02SS ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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