Ordering number : EN7353B 15C02CH Bipolar Transistor http://onsemi.com 15V, 1A, Low VCE(sat) NPN Single CPH3 Applications • Low-frequency amplifer, high-speed switching, small motor drive Features • • • • Large current capacity Low collector-to-emitter saturation voltage (resistance) RCE(sat) typ.=300mΩ [IC=1A, IB=50mA] Ultrasmall package facilitates miniaturization in end products Small ON-resistance (Ron) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings Unit VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature PC Tj Storage Temperature Tstg 20 V 15 V 5 V 1 A 2 Mounted on a ceramic board (600mm2×0.8mm) 700 A mW 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7015A-003 • Package : CPH3 • JEITA, JEDEC : SC-59, TO-236, SOT-23 • Minimum Packing Quantity : 3,000 pcs./reel 15C02CH-TL-E 0.6 2.9 Packing Type: TL 0.15 LOT No. CD 0.2 0.05 1.6 2.8 Marking 3 0.9 0.2 0.6 TL 1 0.95 2 0.4 1 : Base 2 : Emitter 3 : Collector Electrical Connection 3 CPH3 1 2 Semiconductor Components Industries, LLC, 2013 August, 2013 72512 TKIM/91003 TSIM/13003 TSIM TA-100126 No.7353-1/6 15C02CH Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO VCB=12V, IE=0A VEB=4V, IC=0A VCE=2V, IC=50mA Gain-Bandwidth Product hFE fT Output Capacitance Cob Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) VCB=10V, f=1MHz IC=400mA, IB=20mA Emitter Cutoff Current DC Current Gain Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings Conditions min typ Unit max 300 100 nA 100 nA 800 VCE=2V, IC=50mA 400 MHz 4 IC=400mA, IB=20mA pF 140 280 mV 0.9 1.2 V V(BR)CBO V(BR)CEO IC=10μA, IE=0A 20 V IC=1mA, RBE=∞ 15 V V(BR)EBO ton IE=10μA, IC=0A 5 tstg tf See specified Test Circuit. V 30 ns 165 ns 25 ns Switching Time Test Circuit IB1 PW=20μs D.C.≤1% OUTPUT IB2 INPUT VR RB RL 50Ω + 470μF + 220μF VBE= --5V VCC=5V IC=20IB1= --20IB2=400mA Ordering Information Device 15C02CH-TL-E Shipping memo CPH3 3,000pcs./reel Pb Free IC -- VCE 800 700 A VCE=2V 7 .0m 10 5.0mA 1000 3.0mA 600 2.0mA 1.5mA 500 400 1.0mA 300 0.6mA 200 800 600 Ta=7 5°C 25°C --25°C 900 IC -- VBE 1200 .0mA Collector Current, IC -- mA 2 30.0 0.0mA mA 1000 Collector Current, IC -- mA Package 400 200 0.3mA 100 0 0 IB=0 100 200 300 400 500 600 700 800 Collector-to-Emitter Voltage, VCE -- mV 900 0 1000 IT05037 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 IT05038 No.7353-2/6 15C02CH hFE -- IC 1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV DC Current Gain, hFE 25°C 5 IC / IB=20 7 Ta=75°C 7 VCE(sat) -- IC 1000 VCE=2V --25°C 3 2 5 3 2 100 C 5° =7 5°C a T --2 7 5 3 2 °C 25 10 7 5 100 1.0 2 3 5 7 10 3 2 5 7 100 2 3 Collector Current, IC -- mA 2 3 5 7 10 2 3 5 7 100 2 IC / IB=20 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 100 7 C 5° =7 C a T 5° --2 5 3 °C 25 2 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT05043 Collector Current, IC -- mA 1.0 Ta= --25°C 7 75°C 25°C 5 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA Cob -- VCB 10 2 3 1.0 10 1.0 Gain-Bandwidth Product, fT -- MHz Output Capacitance, Cob -- pF 5 3 2 5 3 7 2 10 Collector-to-Base Voltage, VCB -- V f=1MHz 3 2 100 2 3 5 7 10 2 3 5 7 100 2 3 Collector Current, IC -- mA 5 7 1000 IT05040 PC -- Ta 800 1kΩ OUT IN 5 1kΩ 3 IB 2 1.0 7 5 3 2 0.1 0.1 5 IT05041 Collector Dissipation, PC -- mW 7 7 7 1.0 3 Ron -- IB 10 ON Resistance, Ron -- Ω VCE=2V 7 2 5 7 1000 IT05044 fT -- IC 1000 f=1MHz 1.0 1.0 5 7 1000 IT05042 VBE(sat) -- IC 3 IC / IB=50 7 3 Collector Current, IC -- mA IT05039 VCE(sat) -- IC 1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 1.0 5 7 1000 700 M ou nt 600 500 ed on ac er am ic b 400 oa rd 300 (6 00 m m2 ✕ 0. 200 8m m ) 100 0 2 3 5 7 1.0 2 Base Current, IB -- mA 3 5 7 10 IT06664 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT05047 No.7353-3/6 15C02CH Embossed Taping Specification 15C02CH-TL-E No.7353-4/6 15C02CH Outline Drawing 15C02CH-TL-E Land Pattern Example Mass (g) Unit 0.013 mm * For reference Unit: mm 2.4 1.4 0.6 0.95 0.95 No.7353-5/6 15C02CH ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). 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