2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors General Purpose Transistor (50V, 0.15A) 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S zExternal dimensions (Unit : mm) zFeatures 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) 2SD2707 1.2 0.8 (2) (3) 0.8 0.2 0.4 0.4 1.2 0.32 0.2 0.5 0.22 (1) 50 V Emitter-base voltage VEBO 12 V (1) A (DC) A (Pulse)∗ 0.2 0.8 0.15 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 2SD2227S W 0.55 0.2 0.1Min. 0~0.1 ROHM : EMT3 EIAJ : SC-75A (3) 0.3 0.7 1.6 PC 2SD2351, 2SD2226K 0.15 2SD2654, 2SD2707 (2) (3) 0.3 Collector power dissipation 0.15 IC Collector current 2SD2654 1.6 VCEO 1.0 V Collector-emitter voltage 0.2 Unit 60 0.5 0.5 Limits VCBO 0.2 Symbol 0.3 Parameter ROHM : EMT3 Collector-base voltage (1) Base (2) Emitter (3) Collector 0.13 zAbsolute maximum ratings (Ta=25°C) (1) Emitter (2) Base (3) Collector ∗Single pulse Pw=100ms 2.0 1.3 0.9 (1) (2) 1.25 2SD2351 2SD2226K 2SD2227S package hFE Marking Code Basic ordering unit (pleces) VMT3 EMT3 UMT3 SMT3 SPT VW VW VW VW VW BJ∗ T2L BJ∗ TL BJ∗ T106 BJ∗ T146 − TP 8000 3000 3000 3000 5000 2.1 0.2 2SD2654 0~0.1 2SD2707 0.15 Type 0.1Min. ROHM : UMT3 EIAJ : SC-70 Each lead has same dimensions (1) Emitter (2) Base (3) Collector FE 0.95 0.95 1.9 2.9 (2) (3) 0.4 (1) 2SD2226K 1.6 1.1 0~0.1 ROHM : SMT3 EIAJ : SC-59 0.8 0.15 2.8 0.3Min. Each lead has same dimensions 2SD2227S (1) Emitter (2) Base (3) Collector 2 3Min. 3 4 (15Min.) ∗ Denotes h 0.65 0.65 zPackaging specifications and hFE 0.7 2SD2351 0.45 2.5 0.5 0.45 5 ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base (1) (2) (3) Taping specifications Rev.A 1/3 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S Transistors zElectrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 60 − − V Collector-emitter breakdown voltage BVCEO 50 − − V IC=10µA IC=1mA Emitter-base breakdown voltage BVEBO 12 − V IE=10µA Collector cutoff current ICBO − − − 0.3 µA VCB=50V Emitter cutoff current IEBO − − 0.3 VEB=12V VCE(sat) − − 0.3 µA V hFE 820 − 2700 − Transition frequency fT − 250 − MHz Output capacitance Cob − 3.5 − pF Collector-emitter saturation voltage DC current transfer ratio Conditions IC/IB=50mA/5mA ∗ VCE/IC=5V/1mA ∗ ∗ VCE=5V, IE=−10mA, f=100MHz VCB=5V, IE=0A, f=1MHz ∗ Measured using pulse current. zElectrical characteristics curves 0.6µA 0.8 0.4µA 0.4 0 0.2µA IB=0 0 0.1 0.2 0.3 100µA 80 50µA 40 0 0.5 0 Ta=25°C Measured using pulse current 4 8 IB=0 12 16 20 10 5 2 1 0.5 0.2 0 20 °C 120 50 0.2 0.4 0.6 0.8 1.0 1.2 1.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter output characteristics ( Ι ) Fig.2 Grounded emitter output characteristics ( ΙΙ ) Fig.3 Grounded emitter propagation characteristics Ta=25°C Measured using pulse current 5000 2000 VCE=10V 1000 500 5V 200 3V 100 50 10000 5000 1000 200 100 50 20 10 0.2 2 5 10 20 50 100 200 −25°C 500 10 0.2 1 VCE=5V Measured using pulse current 25°C 2000 20 0.5 Ta=100°C 0.5 1 2 5 10 20 50 100 200 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR TO EMITTER VOLTAGE : VCE (V) 10000 DC CURRENT GAIN : hFE 0.4 150µA VCE=5V 100 25°C −25°C 0.8µA 500µA 160 450µA 400µA 350µA 300µA Ta=10 0 1.2 1.0µA µA 250 A 200 µ COLLECTOR CURRENT : IC (mA) 2.0µA 1.8µA 1.6µA 1.4µA COLLECTOR CURRENT : IC (mA) 1.2µA 1.6 200 200 Ta=25°C DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) 2.0 1000 Ta=25°C 500 200 100 IC / IB=50 50 20 10 20 10 5 2 1 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) Fig.6 Collector-emitter saturation voltage vs. collector current ( Ι ) Rev.A 2/3 2SD2707 / 2SD2654 / 2SD2351 / 2SD2226K / 2SD2227S IC / IB=10 500 200 100 Ta=100°C 50 25°C 20 10 −25°C 5 2 1 0.2 0.5 1 2 5 10 20 50 100 200 Ta=25°C 5000 2000 IC/IB=10 20 1000 500 50 200 100 50 20 10 0.2 0.5 1 2 5 10 20 50 100 200 10000 IC/IB=10 5000 Ta= −25°C 2000 25°C 1000 500 100°C 200 100 50 20 10 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( ΙΙ ) Fig.8 Base-emitter saturation voltage vs. collector current ( Ι ) Fig.9 Base-emitter saturation voltage vs. collector current ( ΙΙ ) 500 200 100 50 20 10 5 Ta=25°C VCE=5V 2 Measured 1 using pulse current −1 −2 −5 −10 −20 −50 −100−200 −500 −1000 100 1000 Ta=25°C f=1MHz IE=0A 500 200 20 100 10 50 20 5 2 10 1 5 0.5 2 0.2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Ta=25°C f=1kHz Vi=100mV(rms) RL=1kΩ 50 Ron : (Ω) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) 1000 TRANSITION FREQUENCY : fT (MHz) 10000 COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) 1000 COLLECTOR SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Transistors 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 EMITTER CURRENT : IE (mA) COLLRCTOR TO BASE VOLTAGE : VCB (V) IB (mA) Fig.10 Gain bandwidth product vs. emitter current Fig.11 Collector output capacitance vs. collector-base voltage Fig.12 Output on resistance vs. base current Rev.A 5 10 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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