IMX9 Transistors General purpose transistor (isolated dual transistors) IMX9 zExternal dimensions (Units : mm) 1.1 +0.2 −0.1 2.9±0.2 1.9±0.2 0.8±0.1 0.95 0.95 (6) 1.6 (2) (1) +0.1 0.3 −0.05 (3) 2.8±0.2 (5) +0.2 −0.1 (4) 0~0.1 +0.1 0.15 −0.06 All terminals have same dimensions zStructure Epitaxial planar type NPN silicon transistor ROHM : SMT6 EIAJ : SC-74 0.3~0.6 zFeatures 1) Two 2SD2114K chips in a SMT package. 2) Mounting possible with SMT3 automatic mounting machine. 3) Transistor elements are independent, eliminating interference. 4) Mounting cost and area can be cut in half. Abbreviated symbol: X9 The following characteristics apply to both Tr1 and Tr2. zAbsolute maximum ratings (Ta = 25°C) Parameter zEquivalent circuit Symbol Limits Unit Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 12 V Collector current IC 500 mA Power dissipation Pd 300(TOTAL) mW Junction temperature Tj 150 °C Storage temperature Tstg −55~+150 °C (4) (5) (6) Tr1 Tr2 (3) ∗ (2) (1) ∗ 200mW per element must not be exceeded. zElectrical characteristics (Ta = 25°C) Symbol Min. Typ. Max. Collector-base breakdown voltage BVCBO 25 − − V IC=10µA Collector-emitter breakdown voltage BVCEO 20 − − V IC=1mA Emitter-base breakdown voltage IE=10µA Parameter Unit Conditions BVEBO 12 − − V Collector cutoff current ICBO − − 0.5 µA VCB=20V Emitter cutoff current IEBO − − 0.5 µA VEB=10V VCE(sat) − 0.18 0.4 V IC/IB=500mA/20mA hFE 560 − 2700 − VCE=3V, IC=10mA Collector-emitter saturation voltage DC current transfer ratio fT − 350 − MHz Output capacitance Cob − 8 − pF VCB=10V, IE=0A, f=1MHz Output On-resistance Ron − 0.8 − Ω IB=1mA, Vi=100mVrms, f=1kHz Transition frequency VCE=10V, IE=−50mA, f=100MHz IMX9 Transistors zPackaging specifications Packaging type Part No. Taping Code T110 Basic ordering unit (pieces) 3000 IMX9 zElectrical characteristic curves 2.0µA 1.6 1.4µA 1.8µA 1.2µA 1.2 1.0µA 0.8µA 0.8 0.6µA 0.4µA 0.4 0.2µA IB=0 0 0 0.1 0.2 0.3 0.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) DC CURRENT GAIN : hFE 2000 1000 500 3V 1V 200 100 50 20 10 0.8mA 600 0.6mA 400 0.4mA 0.2mA 200 Ta=25°C Measured using IB=0mA pulse current. 4 6 8 10 2 10000 VCE=3V Measured using pulse current. 5000 2000 1000 Ta=100°C 25°C −25°C 500 200 100 50 20 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (Ι) 10 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current (ΙΙ) Ta=100°C 25°C −25°C 200 100 50 20 10 5 2 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 BASE TO EMITTER VOLTAGE : VBE (V) Fig.2 Grounded emitter output characteristics (ΙΙ) DC CURRENT GAIN : hFE Ta=25°C Measured using pulse current. VCE=5V 5000 1.2mA 1.0mA VCE=3V Measured using pulse current. 500 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter output characteristics(Ι) 10000 800 0 0 0.5 1000 1.8mA 2.0mA 1.6mA 1.4mA Fig.3 Grounded emitter propagation characteristics COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) 1.6µA COLLECTOR CURRENT : IC (mA) 1000 Ta=25°C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 2.0 2000 Ta=25°C Measured using pulse current. 1000 500 200 100 50 IC/IB=100 50 25 20 10 10 5 2 1 2 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation voltage vs. collector current (Ι) IMX9 500 200 100 Ta=100°C 25°C −25°C 50 20 10 5 2 1 2 5 10 20 50 100 200 5001000 Ta=25°C Pulsed 5000 IC/IB=10 25 50 100 2000 1000 500 200 100 50 20 10 1 COLLECTOR CURRENT : IC (mA) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) TRANSITION FREQUENCY : fT (MHz) 2000 1000 500 200 100 50 20 10 −1 −2 −5 −10 −20 −50 −100−200 −500−1000 EMITTER CURRENT : IE (mA) V0 ×RL Vi-V0 Ta=−25°C 25°C 100°C 2000 1000 500 200 100 50 20 10 1 200 100 50 20 10 5 2 1 0.1 0.2 Output V0 5 10 20 50 100 200 5001000 Fig.9 Base-emitter saturation voltage vs. collector current (ΙΙ) Ta=25°C f=1kHz Vi=100mV(rms) RL=1kΩ 50 20 10 5 2 1 0.5 0.2 0.5 1 2 5 10 20 50 100 Fig.11 Collector output capacitance vs. collector-base voltage V 2 COLLECTOR CURRENT : IC (mA) Ta=25°C f=1MHz IE=0A 500 RL=1kΩ Ron= 500 1000 lC/lB=10 Measured using pulse current. 5000 100 1000 zRon measurement circuit IB 50 100 200 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.10 Gain bandwidth product vs. emitter current Input Vi 1kHz 100mV(rms) 10 20 Fig.8 Base-emitter saturation voltage vs. collector current (Ι) Ta=25°C VCE=10V Measured using pulse current. 5000 5 10000 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current (ΙΙ) 10000 2 BASE SATURATION VOLTAGE : VBE(sat) (mV) 10000 IC/IB=25 Measured using pulse current. 1000 ON RESISTANCE : Ron (Ω) 2000 BASE SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) Transistors 0.1 0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 BASE CURRENT : IB (mA) Fig.12 Output-on resistance vs. base current 10 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0