ROHM IMX9

IMX9
Transistors
General purpose transistor
(isolated dual transistors)
IMX9
zExternal dimensions (Units : mm)
1.1 +0.2
−0.1
2.9±0.2
1.9±0.2
0.8±0.1
0.95 0.95
(6)
1.6
(2) (1)
+0.1
0.3 −0.05
(3)
2.8±0.2
(5)
+0.2
−0.1
(4)
0~0.1
+0.1
0.15 −0.06
All terminals have same dimensions
zStructure
Epitaxial planar type
NPN silicon transistor
ROHM : SMT6
EIAJ : SC-74
0.3~0.6
zFeatures
1) Two 2SD2114K chips in a SMT package.
2) Mounting possible with SMT3 automatic mounting
machine.
3) Transistor elements are independent, eliminating
interference.
4) Mounting cost and area can be cut in half.
Abbreviated symbol: X9
The following characteristics apply to both Tr1 and Tr2.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
zEquivalent circuit
Symbol
Limits
Unit
Collector-base voltage
VCBO
25
V
Collector-emitter voltage
VCEO
20
V
Emitter-base voltage
VEBO
12
V
Collector current
IC
500
mA
Power dissipation
Pd
300(TOTAL)
mW
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55~+150
°C
(4)
(5)
(6)
Tr1
Tr2
(3)
∗
(2)
(1)
∗ 200mW per element must not be exceeded.
zElectrical characteristics (Ta = 25°C)
Symbol
Min.
Typ.
Max.
Collector-base breakdown voltage
BVCBO
25
−
−
V
IC=10µA
Collector-emitter breakdown voltage
BVCEO
20
−
−
V
IC=1mA
Emitter-base breakdown voltage
IE=10µA
Parameter
Unit
Conditions
BVEBO
12
−
−
V
Collector cutoff current
ICBO
−
−
0.5
µA
VCB=20V
Emitter cutoff current
IEBO
−
−
0.5
µA
VEB=10V
VCE(sat)
−
0.18
0.4
V
IC/IB=500mA/20mA
hFE
560
−
2700
−
VCE=3V, IC=10mA
Collector-emitter saturation voltage
DC current transfer ratio
fT
−
350
−
MHz
Output capacitance
Cob
−
8
−
pF
VCB=10V, IE=0A, f=1MHz
Output On-resistance
Ron
−
0.8
−
Ω
IB=1mA, Vi=100mVrms, f=1kHz
Transition frequency
VCE=10V, IE=−50mA, f=100MHz
IMX9
Transistors
zPackaging specifications
Packaging type
Part No.
Taping
Code
T110
Basic ordering unit (pieces)
3000
IMX9
zElectrical characteristic curves
2.0µA
1.6
1.4µA
1.8µA
1.2µA
1.2
1.0µA
0.8µA
0.8
0.6µA
0.4µA
0.4
0.2µA
IB=0
0
0
0.1
0.2
0.3
0.4
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
DC CURRENT GAIN : hFE
2000
1000
500
3V
1V
200
100
50
20
10
0.8mA
600
0.6mA
400
0.4mA
0.2mA
200
Ta=25°C
Measured using
IB=0mA pulse current.
4
6
8
10
2
10000
VCE=3V
Measured using
pulse current.
5000
2000
1000
Ta=100°C
25°C
−25°C
500
200
100
50
20
1
2
5
10 20
50 100 200 500 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector
current (Ι)
10
1
2
5
10 20
50 100 200
500 1000
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs.
collector current (ΙΙ)
Ta=100°C
25°C
−25°C
200
100
50
20
10
5
2
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.2 Grounded emitter output
characteristics (ΙΙ)
DC CURRENT GAIN : hFE
Ta=25°C
Measured using
pulse current.
VCE=5V
5000
1.2mA
1.0mA
VCE=3V
Measured using
pulse current.
500
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter output
characteristics(Ι)
10000
800
0
0
0.5
1000
1.8mA 2.0mA
1.6mA
1.4mA
Fig.3 Grounded emitter propagation
characteristics
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
1.6µA
COLLECTOR CURRENT : IC (mA)
1000
Ta=25°C
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
2.0
2000
Ta=25°C
Measured using
pulse current.
1000
500
200
100
50
IC/IB=100
50
25
20
10
10
5
2
1
2
5
10 20
50 100 200 5001000
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current (Ι)
IMX9
500
200
100
Ta=100°C
25°C
−25°C
50
20
10
5
2
1
2
5
10 20
50 100 200 5001000
Ta=25°C
Pulsed
5000
IC/IB=10
25
50
100
2000
1000
500
200
100
50
20
10
1
COLLECTOR CURRENT : IC (mA)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
TRANSITION FREQUENCY : fT (MHz)
2000
1000
500
200
100
50
20
10
−1 −2
−5 −10 −20 −50 −100−200 −500−1000
EMITTER CURRENT : IE (mA)
V0
×RL
Vi-V0
Ta=−25°C
25°C
100°C
2000
1000
500
200
100
50
20
10
1
200
100
50
20
10
5
2
1
0.1 0.2
Output
V0
5 10
20
50 100 200
5001000
Fig.9 Base-emitter saturation voltage
vs. collector current (ΙΙ)
Ta=25°C
f=1kHz
Vi=100mV(rms)
RL=1kΩ
50
20
10
5
2
1
0.5
0.2
0.5 1
2
5
10 20
50 100
Fig.11 Collector output capacitance
vs. collector-base voltage
V
2
COLLECTOR CURRENT : IC (mA)
Ta=25°C
f=1MHz
IE=0A
500
RL=1kΩ
Ron=
500 1000
lC/lB=10
Measured using
pulse current.
5000
100
1000
zRon measurement circuit
IB
50 100 200
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.10 Gain bandwidth product vs.
emitter current
Input
Vi
1kHz
100mV(rms)
10 20
Fig.8 Base-emitter saturation
voltage vs. collector current (Ι)
Ta=25°C
VCE=10V
Measured using
pulse current.
5000
5
10000
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current (ΙΙ)
10000
2
BASE SATURATION VOLTAGE : VBE(sat) (mV)
10000
IC/IB=25
Measured using
pulse current.
1000
ON RESISTANCE : Ron (Ω)
2000
BASE SATURATION VOLTAGE : VBE(sat) (mV)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
Transistors
0.1
0.01 0.02 0.05 0.1 0.2
0.5
1
2
5
BASE CURRENT : IB (mA)
Fig.12 Output-on resistance vs.
base current
10
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0