RB481Y-90 Diodes Schottky barrier diode RB481Y-90 zApplications Low current rectification zDimensions (Unit : mm) zLand size figure (Unit : mm) 0.5 0.22±0.05 (3) 1.2±0.1 (4) 1.55 0.13±0.05 (1) zConstruction Silicon epitaxial planar 1.6±0.1 1.6±0.05 zFeatures 1) Ultra small mold type. (EMD4) 2) Low VF 3) High reliability 0.45 1.6±0.05 1.6±0.1 1.0 0～0.1 EMD4 (2) 0.5 0.5 1.0±0.1 zStructure 0.5±0.05 ROHM : EMD4 JEITA : SC-75A Size dot (year week factory) zTaping dimensions (Unit : mm) φ1.5±0.1 0 2.0±0.05 0.3±0.1 1PIN φ0.8±0.1 4.0±0.1 zAbsolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current（*1） Forward current surge peak （60Hz・1cyc）（*1） Junction temperature Storage temperature 8.0±0.2 1.65±0.01 0～0.1 1.65±0.1 1.65±0.1 1.7±0.05 5.5±0.2 3.5±0.05 1.75±0.1 4.0±0.1 0.65±0.1 Limits 90 90 100 1 125 -40 to +125 Symbol VRM VR Io IFSM Tj Tstg Unit V V mA A ℃ ℃ (*1) Rating of per diode zElectrical characteristic (Ta=25°C) Parameter Forward voltage Reverse current Symbol VF Min. - Typ. 0.55 Max. 0.61 Unit V IR - 20 100 µA Conditions IF=100mA VR=90V Rev.C 1/3 RB481Y-90 Diodes zElectrical characteristic curves 10000 100 1000 Ta=125℃ Ta=25℃ 10 Ta=-25℃ 1 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 0.1 0.01 0 100 200 300 400 500 600 0 500 560 550 540 400 300 250 200 150 100 AVE:552.0mV AVE:29.31uA 28 27 25 24 AVE:21.69pF 23 22 21 0 20 IR DISPERSION MAP Ct DISPERSION MAP 30 1cyc Ifsm 15 8.3ms 10 5 AVE:3.70A 10 Ta=25℃ IF=0.5A IR=1A Irr=0.25*IR n=10pcs 25 20 15 10 AVE:11.7ns 5 9 PEAK SURGE FORWARD CURRENT:IFSM(A) RESERVE RECOVERY TIME:trr(ns) 20 Ifsm 8 8.3ms 8.3ms 1cyc 7 6 5 4 3 2 1 0 0 0 1 IFSM DISRESION MAP 1000 Ifsm t 7 6 5 4 3 2 1 0 1 10 TIME:t(s) IFSM-t CHARACTERISTICS 100 100 0.2 Rth(j-a) Rth(j-c) 100 Mounted on epoxy board IM=10mA 1ms IF=100mA Per diode FORWARD POWER DISSIPATION:Pf(W) TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 9 8 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS trr DISPERSION MAP 10 30 26 50 VF DISPERSION MAP 25 Ta=25℃ f=1MHz VR=0V n=10pcs 29 350 530 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 Ta=25℃ VR=90V n=30pcs 450 CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25℃ IF=0.1A n=30pcs REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) 10 20 30 40 50 60 70 80 90 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 580 570 10 1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS PEAK SURGE FORWARD CURRENT:IFSM(A) 100 CAPACITANCE BETWEEN TERMINALS:Ct(pF) REVERSE CURRENT:IR(uA) FORWARD CURRENT:IF(mA) Ta=125℃ f=1MHz Ta=75℃ D=1/2 0.1 Sin(θ＝180) DC time 300us 10 0.001 0 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0 0.05 0.1 0.15 0.2 0.25 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS Rev.C 0.3 2/3 RB481Y-90 Diodes 1 0.3 0.3 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) REVERSE POWER DISSIPATION:PR (W) 0.8 0.6 Sin(θ＝180) 0.4 D=1/2 DC 0.2 Io 0A 0V t 0.2 D=1/2 DC T VR D=t/T VR=45V Tj=125℃ 0.1 Sin(θ＝180) 0 0 0 20 40 60 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS 80 0 25 50 75 100 AMBIENT TEMPERATURE:Ta(℃) Derating Curveﾞ(Io-Ta) 125 Per diode AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Per diode Per diode Io 0A 0V t DC 0.2 D=1/2 T VR D=t/T VR=45V Tj=125℃ 0.1 Sin(θ＝180) 0 0 25 50 75 100 125 CASE TEMPARATURE:Tc(℃) Derating Curveﾞ(Io-Tc) Rev.C 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1